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Gallium nitride (GaN), one of the third-generation wide-bandgap semiconductors, offers significant application for advanced electronic devices utilized in neutron irradiation environments, like the defense, space, and aerospace, etc. In these applications, neutron irradiation-induced defects affect the properties of GaN and eventually degrade the performance of devices. In this work, neutron transport process in GaN is simulated by using the Monte Carlo-based code, Geant4 toolkit under four different irradiation conditions, e.g. high flux isotope reactor, high temperature gas-cooled reactor, pressurized water reactor, and atmospheric neutron irradiation. The energy spectra of primary knock-on atoms (PKA) in GaN and the corresponding weighted spectra under those irradiation conditions are analyzed. It is found that there is one unusual “peak” at around 0.58 MeV in the Primary recoil spectrum, regardless of the irradiation conditions. This peak is attributed to the neutron reaction of hydrogen nucleus, i.e., (n, p). Because of the remarkable (n,p) reaction cross-section of low-energy neutron, the intensity of this peak is related to the ratio of low-energy neutron to the total neutron spectrum. By comparing these PKA energy spectra in GaN, we can see that the PKA energy spectrum created under atmospheric neutron irradiation is similar to that in the high flux isotopic reactor. Specifically, the energy distribution of PKA is wide, and the magnitude of energy is lower than those under fission neutron irradiation conditions. In combination with the effects of nuclear reaction products on electrical properties, the high flux isotopic reactor is more suitable for simulating the irradiation of GaN in an atmospheric neutron energy spectrum environment. These above results can provide not only some insights into the evaluation of the degradation of GaN-based electronic devices under neutron irradiation, but also dataset for the study of radiation damage effect of GaN in simulated neutron environment.
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Keywords:
- geant4 /
- gallium nitride /
- primary recoils spectrum /
- neutron irradiation effect
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Jia W L, Zhou M, Wang X M, Ji W L 2018 Acta Phys. Sin. 10 107102
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Zhao D G, Zuo S H, Zhou M 2007 Acta Phys. Sin. 56 5513
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[9] 张得玺 2015 硕士学位论文 (西安: 西安电子科技大学)
Zhang D X 2015 M. S. Thesis (Xi’an: Xidian University) (in Chinese)
[10] 吕玲2014 博士学位论文 (西安 西安电子科技大学)
Lv L 2014 Ph.D. Thesis (Xi’an Xidian University)(in Chinese)
[11] Wang R X, Xu S J, Li S, Fung S, Beling C D, Wang K, Wei Z F, Zhou T J, Zhang J D, Gong M, Pang G K H 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Brisbane December 8–10 2004 p141
[12] Wang R X, Xu S J, Fung S, Beling C D, Wang K, Li S, Wei Z F, Zhou T J, Zhang J D, Huang Y 2005 Appl. Phys. Lett. 87 031906
[13] 王园明, 陈伟, 郭红霞, 何宝平, 罗尹虹, 姚志斌, 张凤祁, 张科营, 赵雯 2010 原子能科学技术 44 1505
Wang Y M, Cheng W, Guo H X, He B P, Luo Y H, Yao Z B, Zhang F Q, Zhang K Y, Zhao W 2010 Atom Energ. Sci. Technol. 44 1505
[14] 曾志, 李君利, 程建平, 邱睿 2005 同位素 18 55
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Zeng Z, LI J L, Cheng J P, Qiu R 2005 J. Isotop. 18 55
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[15] 路伟, 王同权, 王兴功, 刘雪林 2011 核技术 34 529
Lu W, Wang T Q, Wang X G, Liu X L 2011 Nucl. Technol. 34 529
[16] Agostinelli S, Allison J, Amako K 2003 Nucl. Instrum. Methods Phys. Res., Sect. A 506 250
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He B W, He C H, Shen S S, Chen Y M L 2017 Atom Energ. Sci. Technol. 51 543
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Guo D X, He C H, Zang H, Xi J Q, Ma L, Yang T, Zhang P 2013 Atom Energ Sci Technol 47 1222
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Hu Z L, Yang W T, Li Y H, Li Y, He C H, Wang S L, Zhou B, Yu Q Z, He H, Xie F, Bai Y R, Liang T J 2019 Acta Phys. Sin. 68 238502
Google Scholar
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[25] Akkerman A, Barak J 2006 Proc. IEEE Trans. Nucl. Sci. 53 3667
[26] Detlef F, Frank G 2009 Handbook of Spallation Research: Theory, Experiments and Applications (Berlin, Wiley-VCG) pp220-224
[27] 杨福家, 王炎森, 陆福全 2002 原子核物理 (第2版) (上海: 复旦大学出版社) 第153页
Yang F J, Wang Y S, Lu F Q 2002 Nuclear Physics (Vol.2) (Shanghai: Fudan University Press) p153 (in Chinese)
[28] Wiedersich H 1990 Radiat. Eff. and Defects. Solids 113 97
[29] Mota F, Vila R, Ortiz C, Garcia A, Casal N, Ibarra A, Rapisarda D, Queral V 2011 Fusion Eng. Des. 86 2425
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图 1 四种典型的归一化中子能谱
Figure 1. Four typical normalized neutron spectrum
图 2 中子在GaN中的平均自由程
Figure 2. The mean free path of neutrons in GaN.
图 3 Geant4中模拟的几何模型
Figure 3. Simulated geometric model in Geant4.
图 4 四种中子能谱在氮化镓中对应的初级反冲原子能谱
Figure 4. Primary recoil spectrum of four neutron spectra in GaN.
图 5 高通量同位素堆外围辐照区环境下的初级反冲原子能谱分析
Figure 5. Analysis of primary recoil spectrum over peripheral irradiation area in high flux isotope reactor.
图 6 中子辐照氮化镓的
$ ({\rm{n}}, {\rm{p}})$ 反应截面Figure 6. （n,p）reaction cross section for GaN.
图 7 产氢反应比例随中子能量变化
Figure 7. Proportion of hydrogen production reaction varies with neutron energy.
图 8 四种中子能谱的累积积分中子能谱
Figure 8. Cumulative integral neutron spectra of four neutron spectra.
图 9 不同中子能谱在氮化镓中对应的初级反冲原子的能谱分布 (a)Ga初级反冲原子能谱; (b)N初级反冲原子的能谱; (c)B初级反冲原子的能谱; (d) C初级反冲原子的能谱
Figure 9. Primary recoils spectrum distribution for different neutron spectra for the primary recoil particle type of (a) Ga, (b) N, (c) B, (d) C.
图 10 四种中子能谱在氮化镓中对应的加权初级初级反冲原子谱Wp(T)
Figure 10. Weighted primary recoil spectra of four neutron spectra in GaN.
图 11 所研究中子能谱在氮化镓中对应的加权初级反冲原子谱Wp(T) (a) Ga加权初级反冲原子谱; (b) N加权初级反冲原子谱; (c) B加权初级反冲原子谱; (d) C加权初级反冲原子谱
Figure 11. Weighted primary recoil spectra of studied neutron spectra in GaN: (a) Ga; (b) N; (c) B; (d) C.
表 1 不同能谱下初级反冲原子占比
Table 1. Primary recoils proportion of different spectrum.
能谱 初级反冲原子比例/% Ga N C B H He other 大气中子 52.34 45.08 1.25 0.032 1.26 0.034 0.004 压水堆 54.26 43.39 0.92 0.25 0.92 0.25 0.01 高温气冷堆 54.87 43.62 0.52 0.23 0.52 0.23 0.01 同位素堆 48.27 44.94 3.28 0.11 3.28 0.11 0.01 
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[1] 贾婉丽, 周淼, 王馨梅, 纪卫莉 2018 物理学报 10 107102
Google Scholar
Jia W L, Zhou M, Wang X M, Ji W L 2018 Acta Phys. Sin. 10 107102
Google Scholar
[2] 赵德刚, 周梅, 左淑华 2007 物理学报 56 5513
Google Scholar
Zhao D G, Zuo S H, Zhou M 2007 Acta Phys. Sin. 56 5513
Google Scholar
[3] 张力, 林志宇, 罗俊, 王树龙, 张进成, 郝跃, 戴扬, 陈大正, 郭立新 2017 物理学报 66 247302
Google Scholar
Zhang L, Lin Z Y, Luo J, Wang S L, Zhang J C, Hao Y, Dai Y, Chen D Z, Guo L X 2017 Acta Phys. Sin. 66 247302
Google Scholar
[4] 孙殿照 2000 物理 30 413
Sun D Z 2000 Physics 30 413
[5] Hadis Morkoç 2008 Handbook of Nitride Semiconductors and Devices (Weinheim: Wiley-VCH) pp1–129
[6] Lorenz K, Marques J G, Franco N, Alves E, Peres M, Correia M R, Monteiro T 2008 Nucl. Instrum. Methods Phys. Res., Sect. B 266 2780
[7] Kazukauskas V, Kalendra V, Vaitkus V 2006 Nucl. Instrum. Methods Phys. Res., Sect. A 568 421
[8] Zhang M L, Wang X L, Xiao H L, Yang C B, Wang R 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai, November 1–4, 2010 p1533
[9] 张得玺 2015 硕士学位论文 (西安: 西安电子科技大学)
Zhang D X 2015 M. S. Thesis (Xi’an: Xidian University) (in Chinese)
[10] 吕玲2014 博士学位论文 (西安 西安电子科技大学)
Lv L 2014 Ph.D. Thesis (Xi’an Xidian University)(in Chinese)
[11] Wang R X, Xu S J, Li S, Fung S, Beling C D, Wang K, Wei Z F, Zhou T J, Zhang J D, Gong M, Pang G K H 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Brisbane December 8–10 2004 p141
[12] Wang R X, Xu S J, Fung S, Beling C D, Wang K, Li S, Wei Z F, Zhou T J, Zhang J D, Huang Y 2005 Appl. Phys. Lett. 87 031906
[13] 王园明, 陈伟, 郭红霞, 何宝平, 罗尹虹, 姚志斌, 张凤祁, 张科营, 赵雯 2010 原子能科学技术 44 1505
Wang Y M, Cheng W, Guo H X, He B P, Luo Y H, Yao Z B, Zhang F Q, Zhang K Y, Zhao W 2010 Atom Energ. Sci. Technol. 44 1505
[14] 曾志, 李君利, 程建平, 邱睿 2005 同位素 18 55
Google Scholar
Zeng Z, LI J L, Cheng J P, Qiu R 2005 J. Isotop. 18 55
Google Scholar
[15] 路伟, 王同权, 王兴功, 刘雪林 2011 核技术 34 529
Lu W, Wang T Q, Wang X G, Liu X L 2011 Nucl. Technol. 34 529
[16] Agostinelli S, Allison J, Amako K 2003 Nucl. Instrum. Methods Phys. Res., Sect. A 506 250
[17] 申帅帅, 贺朝会, 李永宏 2018 物理学报 67 182401
Google Scholar
Shen S S, He C H, Li Y H 2018 Acta Phys. Sin. 67 182401
Google Scholar
[18] Apostolakis J, Asai M, Bogdanoy A G 2009 Radiat. Phys. Chem. 78 859
[19] 何博文, 贺朝会, 申帅帅, 陈袁妙粱 2017 原子能科学技术 51 543
Google Scholar
He B W, He C H, Shen S S, Chen Y M L 2017 Atom Energ. Sci. Technol. 51 543
Google Scholar
[20] 郭达禧, 贺朝会, 臧航, 席建奇, 马梨, 杨涛, 张鹏 2013 原子能科学技术 47 1222
Google Scholar
Guo D X, He C H, Zang H, Xi J Q, Ma L, Yang T, Zhang P 2013 Atom Energ Sci Technol 47 1222
Google Scholar
[21] 胡志良, 杨卫涛, 李永宏, 李洋, 贺朝会, 王松林, 周斌, 于全芝, 何欢, 谢飞, 白雨蓉, 梁天骄 2019 物理学报 68 238502
Google Scholar
Hu Z L, Yang W T, Li Y H, Li Y, He C H, Wang S L, Zhou B, Yu Q Z, He H, Xie F, Bai Y R, Liang T J 2019 Acta Phys. Sin. 68 238502
Google Scholar
[22] Was GS. 2007 Fundamentals of Radiation Materials Science: Metals and Alloys (Berlin: Springer) pp545–577
[23] Hu J W, Hayes A C, Wilson W B, Rizwan U 2010 Nucl. Eng Des 240 3751
[24] Robinson M T, Torrens I M 1974 Phys. Rev. B 9 5008
[25] Akkerman A, Barak J 2006 Proc. IEEE Trans. Nucl. Sci. 53 3667
[26] Detlef F, Frank G 2009 Handbook of Spallation Research: Theory, Experiments and Applications (Berlin, Wiley-VCG) pp220-224
[27] 杨福家, 王炎森, 陆福全 2002 原子核物理 (第2版) (上海: 复旦大学出版社) 第153页
Yang F J, Wang Y S, Lu F Q 2002 Nuclear Physics (Vol.2) (Shanghai: Fudan University Press) p153 (in Chinese)
[28] Wiedersich H 1990 Radiat. Eff. and Defects. Solids 113 97
[29] Mota F, Vila R, Ortiz C, Garcia A, Casal N, Ibarra A, Rapisarda D, Queral V 2011 Fusion Eng. Des. 86 2425
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