Effect of nano-nucleation sites assisted crystallization on  performance of perovskite photodetector

Sun Xue; Huang Feng; Liu Gui-Xiong; Su Zi-Sheng

doi:10.7498/aps.71.20220189

Abstract

Photodetector occupies an important position in the sensor family, but most of the photoelectric conversion materials of photodetectors are inorganic semiconductors, such as GaAs, GaN, Ge and Si, these inorganic semiconductors are usually prepared by complicated methods and high cost, and furthermore, they have poor mechanical flexibility. Organic-inorganic hybrid perovskite materials serving as visible-light sensitizers have the advantages of balanced electron and hole mobilities, adjustable bandgaps, high absorption coefficients, low temperature solution preparation, which make the materials a suitable candidate for inorganic semiconductors.For planar photodetectors, carriers have greater probabilities to be trapped by the defects in the perovskite films, therefore it is important to fabricate a high-quality perovskite film. However, owing to the low formation energy of perovskite crystals, defects prove to occur on the film surface and grain boundaries, which aggravate the performance of perovskite optoelectronic devices. In this work, we introduce a small quantity of graphene oxide nanosheets (GOSs) on bare glass substrate as effective nucleation sites of perovskite crystals. Owing to the extremely low density of GOSs and large exposed glass basement, the GOSs cannot be regarded as an interface layer. The existence of GOSs on smooth substance reduces the perovskite nucleation barrier, leading to a more preferential crystal growth in these locations, and binds tightly with glass substrate, which passivates the defects efficiently. Meanwhile, the element of O in the GOSs can create Pb–O bond with Pb in the CH₃NH₃PbI₃, further improving the crystal of perovskite. On this basis, planner perovskite photodetector with a structure of glass/GOSs/CH₃NH₃PbI₃/MoO₃/Au is fabricated. By adjusting the concentration of GOSs deionized water dispersion under the same spin-coating condition, the photoelectric conversion performance of perovskite photodetector is enhanced. Under the influence of the optimal concentration of GOSs, photocurrent of the champion photodetector (1.15 × 10^–6 A) is an order of magnitude higher than that of reference device without GOSs modified (3.58 × 10^–7 A) at 3 V bias, leading to a high ON/OFF current ratio of 5.22 × 10³. Besides, improved photoresponse speed is also found in the champion device, with a rise time of 9.6 ms and a decay time of 6.6 ms, respectively. The enhanced performance of GOSs modified perovskite photodetector can be attributed to the significantly reduced defects bringing about an enhanced charge separation and collection performance in the CH₃NH₃PbI₃ films.By introducing extremely low quantity GOSs as the effective perovskite crystal nucleation sites, the perovskite crystallization and thin film can be effectively improved, leading to a positive effect on the performance of perovskite photodetector. This method has a certain universality, and therefore it has a reference value for other structures of perovskite photoelectric devices.

Keywords:

Authors and contacts

1.
School of Mechanical and Automotive Engineering, South China University of Technology, Guangzhou 510006, China
2.
Guangzhou Institute of Measurement and Testing Technology, Guangzhou 510663, China
3.
Fujian Provincial Key Laboratory for Advanced Micro-Nano Photonics Technology and Devices, College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou 362000, China

Corresponding author: Su Zi-Sheng, suzs@qztc.edu.cn

Funds: Project supported by the Natural Science Foundation of Fujian Province, China (Grant No. 2020J01778).

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References

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[2]	Tian H J, Hu A Q, Liu Q L, He X Y, Guo X 2020 Adv. Opt. Mater. 8 1901741 Google Scholar
[3]	Wu J H, Yang Z W, Qiu C Y, Zhang Y J, Wu Z Q, Yang J L, Lu Y H, Li J F, Yang D X, Hao R, Li E P, Yu G L, Lin S S 2018 Nanoscale 10 8023 Google Scholar
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[5]	Liu L, Yang C, Patanè A, Yu Z, Yan F G, Wang K Y, Lu H X, Li J M, Zhao L X 2017 Nanoscale 9 8142 Google Scholar
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[29]	Li W Z, Dong H P, Guo X D, Li N, Li J W, Niu G D, Wang L D 2014 J. Mater. Chem. A 2 20105 Google Scholar
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Cited By

图 1 (a) 空白硅片以及 (b) 0.025, (c) 0.050, (d) 0.100 mg/mL GOSs分散液沉积在硅片表面的形貌

Figure 1. The morphology of (a) bare silicon wafer and (b) 0.025, (c) 0.050, (d) 0.100 mg/ mL GOSs dispersion deposited on the surface of silicon wafer.

DownLoad: Full-Size Img PowerPoint

图 2 (a) G₀, (b) G_0.025, (c) G_0.05和(d) G_0.1上生长的钙钛矿薄膜的平面扫描SEM照片

Figure 2. Top-view SEM images of the CH₃NH₃PbI₃ films on (a) G₀, (b) G_0.025, (c) G_0.05 and (d) G_0.1

DownLoad: Full-Size Img PowerPoint

图 3 (a) G₀和(b) G_0.05上生长的钙钛矿薄膜的断面扫描SEM照片

Figure 3. Cross-sectional SEM images of the CH₃NH₃PbI₃ films on (a) G₀ and (b) G_0.05

DownLoad: Full-Size Img PowerPoint

图 4 (a) 钙钛矿薄膜在G₀, G_0.025, G_0.05以及G_0.1上的XRD图谱; (b) 相应样品在14.2°和28.5°位置衍射峰放大图

Figure 4. (a) XRD patterns of the CH₃NH₃PbI₃ films on G₀, G_0.025, G_0.05 and G_0.1; (b) enlarged diffraction peaks at 14.2° and 28.5° of the corresponding samples.

DownLoad: Full-Size Img PowerPoint

图 5 沉积在G₀, G_0.025, G_0.05以及G_0.1上的CH₃NH₃PbI₃光吸收谱. 图中同时给出G_0.1放大30倍的吸收光谱

Figure 5. Absorbance spectra of the CH₃NH₃PbI₃ films deposited on G₀, G_0.025, G_0.05 and G_0.1. The absorption spectrum of G_0.1 amplified by 30 is also shown in the figure.

DownLoad: Full-Size Img PowerPoint

图 6 钙钛矿光电探测器的(a)结构示意图和(b)器件实物照片

Figure 6. (a) Schematic structure and (b) picture of the perovskite photodetector.

DownLoad: Full-Size Img PowerPoint

图 7 (a)光照及(b)黑暗条件下G₀, G_0.025, G_0.05和G_0.1上制备的钙钛矿探测器的I-V曲线

Figure 7. I-V curves of the photodetectors fabricated on G₀, G_0.025, G_0.05 and G_0.1 under (a) solar simulator irradiation and (b) dark, respectively.

DownLoad: Full-Size Img PowerPoint

图 8 分别沉积在G₀和G_0.05上的钙钛矿光电探测器的R和D*

Figure 8. The R and D* of perovskite photodetectors fabricated on G₀ and G_0.05, respectively.

DownLoad: Full-Size Img PowerPoint

图 9 G₀和G_0.05上制备的钙钛矿光电探测器的5个周期光响应行为

Figure 9. Five cycles photoresponse behavious of the perovskite photodetectors fabricated on G₀ and G_0.05.

DownLoad: Full-Size Img PowerPoint

表 1 不同基底上生长的钙钛矿薄膜XRD衍射峰半峰宽

Table 1. FWHM of the CH₃NH₃PbI₃ XRD diffraction peaks deposited on different substrates.

	FWHM/(°)
	14.2	28.5
G₀/CH₃NH₃PbI₃	0.133	0.146
G_0.025/CH₃NH₃PbI₃	0.113	0.104
G_0.05/CH₃NH₃PbI₃	0.112	0.099
G_0.1/CH₃NH₃PbI₃	0.121	0.115

DownLoad: CSV

表 2 溶液法制备的可见光探测器性能

Table 2. Performance of visible light detector prepared by solution method.

材料	制备方法	开关比/10³	响应度/(A·W^–1)	探测率/Jones	响应时间	Ref.
Cs_0.1FA_0.2MA_0.7Pb(I_0.9Cl_0.1)₃-F4TCNQ	旋涂	6.94	5.4	—	530 ms/600 ms	[35]
(BA)₂(MA)n₁PbnI_3n+1	旋涂	1.38	27.06	—	3.53 ms/3.78 ms	[36]
CH₃NH₃PbI₃	旋涂	—	0.47	8.2 × 10¹²	18 ns	[37]
CH₃NH₃PbI₃	旋涂	5.22	1.71	2.04 × 10¹⁴	9.6 ms/6.6 ms	This work
ZnO/pentacene	旋涂	—	0.36	2.17 × 10¹⁴	—	[38]
p-NiO/n-CdS	水热法/旋涂	~0.005	2.60 × 10^–2	9.21 × 10⁹	3.5 s	[39]
CdSe	旋涂	4.7	0.16	4 × 10¹¹	107 ms/110 ms	[40]
PTQ10∶O-IDTBR	刮刀涂布	—	0.03	3.3 × 10¹¹	20 μs/25 μs	[41]
PTQ10∶O-FBR	刮刀涂布	—	0.34	9.6 × 10¹²	12 μs/15 μs	[41]

DownLoad: CSV

[1]	Šagátová A, Zaťko B, Nečas V, Dubecký F, Anh T L, Sedlačková K, Boháček P, Zápražný Z 2018 Appl. Surf. Sci. 461 3 Google Scholar
[2]	Tian H J, Hu A Q, Liu Q L, He X Y, Guo X 2020 Adv. Opt. Mater. 8 1901741 Google Scholar
[3]	Wu J H, Yang Z W, Qiu C Y, Zhang Y J, Wu Z Q, Yang J L, Lu Y H, Li J F, Yang D X, Hao R, Li E P, Yu G L, Lin S S 2018 Nanoscale 10 8023 Google Scholar
[4]	Gundimeda A, Krishna S, Aggarwal N, Sharma A, Sharma N D, Maurya K K, Husale S, Gupta G 2017 Appl. Phys. Lett. 110 103507 Google Scholar
[5]	Liu L, Yang C, Patanè A, Yu Z, Yan F G, Wang K Y, Lu H X, Li J M, Zhao L X 2017 Nanoscale 9 8142 Google Scholar
[6]	Takenaka M, Morii K, Sugiyama M, Nakano Y, Takagi S 2012 Opt. Express 20 8718 Google Scholar
[7]	Hössbacher C, Salamin Y, Fedoryshyn Y, et al. 2017 IEEE Photonics Technol. Lett. 29 1760 Google Scholar
[8]	Berencén Y, Prucnal S, Liu F, Skorupa I, Hübner R, Rebohle L, Zhou S Q, Schneider H, Helm M, Skorupa W 2017 Sci. Rep. 7 1 Google Scholar
[9]	Vivien L, Polzer A, Marris-Morini D, Osmond J, Hartmann J M, Crozat P, Cassan E, Kopp C, Zimmermann H, Fédéli J M 2012 Opt. Express 20 1096 Google Scholar
[10]	Yang J, Pi M Y, Zhang D K, Tang X S, Du J 2021 Chin. J. Lumin. 42 755 Google Scholar
[11]	Gayen R N, Paul R, Biswas S 2020 Appl. Surf. Sci. 533 147149 Google Scholar
[12]	Ozel K, Yildiz A 2021 Phys. Status. Solidi RRL 15 2100085 Google Scholar
[13]	Chen W, Tang H, Chen Y, Heger J E, Li N, Kreuzer L P, Xie Y, Li D P, Anthony C, Pikramenou Z, Ng W K, Sun X W, Wang K, Müller-Buschbaum, P 2020 Nano Energy 78 105254 Google Scholar
[14]	Wang Y D, Liu Y L, Cao S K, Wang J Z 2021 J. Mater. Chem. C 9 5302 Google Scholar
[15]	柴磊, 钟敏 2016 物理学报 65 237902 Google Scholar Chai L, Zhong M 2016 Acta Phys. Sin. 65 237902 Google Scholar
[16]	Qu Z H, Ma F, Zhao Y, Chu X B, Yu S Q, You J B 2021 Chin. Phys. Lett. 38 107801 Google Scholar
[17]	Wang H, Kim D H 2017 Chem. Soc. Rev. 46 5204 Google Scholar
[18]	张钰, 周欢萍 2019 物理学报 68 158804 Google Scholar Zhang Y, Zhou H P 2019 Acta Phys. Sin. 68 158804 Google Scholar
[19]	Zhu H L, Liang Z, Huo Z, Ng W K, Mao J, Wong K S, Yin W J, Choy W C H 2018 Adv. Funct. Mater. 28 1706068 Google Scholar
[20]	Li Y, Li Y, Shi J, Zhang H Y, Wu J H, Li D M, Luo Y H, Wu H J, Meng Q B 2018 Adv. Funct. Mater. 28 1705220 Google Scholar
[21]	Wang T, Lian G, Huang L P, Zhu F, Cui D L, Wang Q L, Meng Q B, Jiang H H, Zhou G J, Wong C P 2019 Nano Energy 64 103914 Google Scholar
[22]	Li D, Müller M B, Gilje S, Kaner R B, Wallace G G 2008 Nat. Nanotechnol. 3 101 Google Scholar
[23]	Yang X, Qiu L, Cheng C, Wu Y Z, Ma Z F, Li D 2011 Angew. Chem. Int. Ed. 50 7325 Google Scholar
[24]	Georgakilas V, Tiwari J N, Kemp K C, Perman J A, Bourlinos A B, Kim K S, Zboril R 2016 Chem. Rev. 116 5464 Google Scholar
[25]	Ye S Y, Rao H X, Yan W B, Li Y H, Sun W H, Peng H T, Liu Z W, Bian Z Q, Li Y F, Huang C H 2016 Adv. Mater. 28 9648 Google Scholar
[26]	Jeon N J, Noh J H, Kim Y C, Yang W S, Ryu S, Seol S I 2014 Nat. Mater. 13 897 Google Scholar
[27]	Wang Z K, Li M, Yuan D X, Shi X B, Ma H, Liao L S 2015 ACS Appl. Mater. Interfaces 7 9645 Google Scholar
[28]	Liu L, Xi Q Y, Gao G, Yang W, Zhou H, Zhao Y X, Wu C Q, Wang L D, Xu J W 2016 Sol. Energy Mater. Sol. Cells 157 937 Google Scholar
[29]	Li W Z, Dong H P, Guo X D, Li N, Li J W, Niu G D, Wang L D 2014 J. Mater. Chem. A 2 20105 Google Scholar
[30]	Kröger M, Hamwi S, Meyer J, Riedl T, Kowalsky W, Kahn A 2009 Appl. Phys. Lett. 95 251
[31]	Greiner M T, Helander M G, Tang W M, Wang Z B, Qiu J, Lu Z H 2012 Nat. Mater. 11 76 Google Scholar
[32]	Wang Y, Song Q G, Lin T, Fu Y, Sun X, Chu B, Jin F M, Zhao H F, Li W L, Su Z S, Li Y T 2017 Org. Electron. 49 355 Google Scholar
[33]	Afzal A M, Bae I G, Aggarwal Y, Park J, Jeong H R, Choi E H, Park B 2021 Sci. Rep. 11 1 Google Scholar
[34]	Hamilton M C, Martin S, Kanicki J 2004 IEEE Trans. Electron. Devices 51 887
[35]	Khan A A, Azam M, Eric D, Liang G X, Yu Z N 2020 J. Mater. Chem. C 8 2880 Google Scholar
[36]	Wei Y Z, Feng G T, Mao P, Luan Y G, Zhuang J, Chen N L, Yang H X, Li W W, Yang S Y, Wang J Z 2020 ACS Appl. Mater. Interfaces 12 8826 Google Scholar
[37]	Shan C W, Meng F, Yu J H, Wang Z X, Li W H, Fan D Y, Chen R, Ma H B, Li G Q, Kyaw A K K 2021 J. Mater. Chem. C 9 7632 Google Scholar
[38]	Srivastava A, Jit S, Tripathi S 2021 IEEE Trans. Electron. Devices 68 IEEE Trans. Electron. Devices
[39]	Reddy K C S, Selamneni V, Rao M G S, Meza-Arroyo J, Sahatiya P, Ramirez-Bon R 2021 Appl. Surf. Sci. 568 150944 Google Scholar
[40]	Dutta A, Medda A, Bera R, Sarkar K, Sain S, Kumar P, Patra A 2020 ACS Appl. Nano Mater. 3 4717
[41]	Bristow H, Jacoutot P, Scaccabarozzi A D, et al. 2020 ACS Appl. Mater. Interfaces 12 48836 Google Scholar

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Vol. 71, Issue 17 - 2022-09-05

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