<i>In-situ</i> strain engineering and applications of van der Waals materials

Ma Ze-Cheng; Liu Zeng-Lin; Cheng Bin; Liang Shi-Jun; Miao Feng

doi:10.7498/aps.73.20240353

Abstract

Van der Waals (vdW) materials have attracted extensive research interest in the field of strain engineering due to their unique structure and excellent performance. By changing the atomic lattice and electronic structure, strain can modulate the novel physical properties of vdW materials and generate new quantum states, ultimately realize high-performance electronic devices based on new principles. In this paper, we first comprehensively review various experimental strategies of inducing in-situ strain, which include the bending deformation of flexible substrates, mechanical stretching of microelectromechanical systems and electrodeformation of piezoelectric substrates. Then, we outline the recent research progresses of in-situ strain-modulated magnetism, superconductivity and topological properties in vdW materials, as well as the development of strain-related device applications, such as intelligent strain sensors and strain-programmable probabilistic computing. Finally, we examine the current challenges and provide insights into potential opportunities in the field of strain engineering.

Keywords:

Authors and contacts

1.
School of Physics, Nanjing University, Nanjing 210093, China
2.
School of Physics, Nanjing University of Science and Technology, Nanjing 210094, China

Corresponding author: Liang Shi-Jun, sjliang@nju.edu.cn ; Miao Feng, miao@nju.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 62122036, 62034004, 12322407, 61921005, 12074176), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB44000000), the AIQ Foundation, and the Program B for Outstanding PhD Candidate of Nanjing University, China.

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Cited By

图 1 范德瓦耳斯材料的原位应变工程与应用研究概述^[36–41]

Figure 1. Summary of in-situ strain engineering and application in vdW materials^[36–41].

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图 2 原位应变施加方式　(a) 柔性衬底弯曲诱导的单轴应变^[45]; (b) 微纳机电系统实现的单轴应变^[51]; (c) 柔性衬底弯曲导致的双轴应变^[53]; (d) 压电衬底形变导致的双轴应变^[54]

Figure 2. Strategies for inducing in-situ strain: (a) Uniaxial strain induced by bending the flexible substrate^[45]; (b) uniaxial strain induced through a microelectromechanical system (MEMs)^[51]; (c) biaxial strain caused by bending the flexible substrate^[53]; (d) biaxial strain caused by the deformation of the piezoelectric substrate^[54].

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图 3 范德瓦耳斯磁性材料的应变调控　(a) 应变对Fe₃GeTe₂铁磁性能的调控^[37]; (b) 应变辅助的磁化翻转^[37]; (c) MnPSe₃中奈尔矢量与应变方向的关系^[75]; (d) 应变诱导CrSBr从反铁磁态到铁磁态的转变^[40]; (e) 面内反铁磁态到铁磁态转变的示意图^[40]

Figure 3. Strain-modulated magnetism in vdW materials: (a) Strain-modulated ferromagnetic properties in Fe₃GeTe₂^[37]; (b) strain-assisted magnetization reversal^[37]; (c) relationship between the Néel vector and different strain directions in MnPSe₃^[75]; (d) strain-induced antiferromagnetic-to-ferromagnetic phase transition in CrSBr^[40]; (e) diagram of in-plane antiferromagnetic-to-ferromagnetic phase transition^[40].

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图 4 范德瓦耳斯超导体的应变调控　(a) FeSe块体中应变诱导的电阻各向异性^[87]; (b) 不同应变类型的示意图(ε_A1g是非对称破缺型应变, ε_B1g是破坏四重旋转对称性的应变)^[88]; (c) FeSe块体中超导现象与应变的关系^[87]; (d) FeSe薄片中向列相和超导相与应变的关系^[88]

Figure 4. Strain-modulated superconductivity in vdW materials: (a) Strain-induced nematic resistive anisotropy in FeSe bulk^[87]; (b) schematics of different strain types (ε_A1g is non-symmetry-breaking strain and ε_B1g is the strain component that breaks the four-fold rotational symmetry.)^[88]; (c) strain-dependent superconductivity in FeSe bulk^[87]; (d) strain-dependent nematic and superconducting transition in FeSe thin flake^[88].

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图 5 范德瓦耳斯拓扑材料的应变调控　(a)—(c) MoS₂中应变方向(依次为无应变、沿锯齿形方向应变和沿扶手椅方向应变)依赖的谷磁化和贝里曲率偶极子^[92]; (d), (e) ZrTe₅在负应变和正应变下的负纵向磁阻, 分别对应强拓扑绝缘相和弱拓扑绝缘相^[36], 负磁阻在临界应变处最强, 表明无带隙的狄拉克半金属相; (f) TaSe₃中强拓扑绝缘相、平庸半金属相和平庸绝缘相在角分辨光电子能谱中的费米面^[80]; (g) TaSe₃在不同应变下费米能级的光谱强度演变^[80]

Figure 5. Strain-modulated topological properties in vdW materials: Valley magnetization and Berry curvature dipole of MoS₂ under zero strain (a), 0.55% strain along the zigzag direction (b) and 0.55% strain along the armchair direction (c), respectively^[92]; negative longitudinal magnetoresistance of ZrTe₅ for negative strains (d) and positive strains (e) measured relative to a critical strain, corresponding to the phases of the strong topological insulator and weak topological insulator, respectively^[36]. The negative magnetoresistance is strongest at the critical strain, where ZrTe₅ is a gapless Dirac semimetal; (f) measured Fermi surfaces of TaSe₃ in the phases of strong topological insulator, trivial semimetal and trivial insulator, respectively^[80]; (g) evolution of the spectral intensity at the Fermi level with different strain values in TaSe₃ ^[80].

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图 6 应变工程的器件应用　(a) 用于监测不同频率声音的SnS₂应变传感器^[106]; (b) 用于探测不同CH₄气体浓度的黑磷LED传感器^[39]; (c) 用于探测不同CO₂气体浓度的黑磷LED传感器^[39]; (d) CrSBr磁性隧道结中磁序的应变调控示意图^[41]; (e) 磁序随静态压电电压的响应函数^[41], 0表示稳定的反铁磁态, 1表示稳定的铁磁态; (f) 响应函数接近0.5时, 隧穿电流(上)和转换后的二进制序列(下)随时间的变化, 表明磁性层的磁序处于反铁磁态或铁磁态的概率相等^[41]

Figure 6. Device applications of strain engineering: (a) SnS₂ based strain sensor for detecting sound with different frequencies^[106]; sensor response characteristics of a black phosphorus LED (0.3%; tensile) at varying concentrations of CH₄ pulses (b) and a black phosphorus LED (0.2%; compressive) at varying concentrations of CO₂ pulses (c)^[39]; (d) schematic of strain tuning between magnetic domains in CrSBr magnetic tunnel junction^[41]; (e) response function of a magnetic domain as a function of static piezo voltage^[41], a value of either 0 or 1 indicates a stable domain; (f) tunneling current (top) and converted binary sequence (bottom) over time when the response function is near 0.5, indicating the equal probability between antiferromagnetic and ferromagnetic phases.

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Vol. 73, Issue 11 - 2024-06-05

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In-situ strain engineering and applications of van der Waals materials

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Corresponding author: Liang Shi-Jun, sjliang@nju.edu.cn ; Miao Feng, miao@nju.edu.cn

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In-situ strain engineering and applications of van der Waals materials

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Corresponding author: Liang Shi-Jun, sjliang@nju.edu.cn ; Miao Feng, miao@nju.edu.cn

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