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Transparent conducting oxides (TCOs) are crucial materials in optoelectronics, but p-type TCOs are less studied than n-type TCOs. NiO, for typical p-type TCOs show promising potential applications in transparent optoelectronic devices. In this study, LixNi1–xO thin films with varying thickness and Li doping levels on MgO(001) substrates are successfully fabricated using pulsed laser deposition. The results demonstrate that increasing both thickness and Li doping level will reduce the resistivity of the films, with the maximum optical bandgap observed at a thickness of 50 nm and 3% Li doping level. Based on the control of physical properties through film thickness and Li doping, the p-type LixNi1–xO with the largest bandgap is selected to construct transparent electronic devices with n-type La-doped ASnO3 films. The I-V tests confirm the rectification properties of the heterostructures, successfully demonstrating the formation of pn junctions. This work expands the potential applications of transparent electronic devices by integrating p-type NiO with n-type ASnO3.
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Keywords:
- transparent conducting oxide /
- thin film /
- doping /
- pn junction
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图 1 厚度对LNO单层膜(x = 0.07)物性的影响 (a)载流子浓度、迁移率和电阻率随厚度的变化; (b)光学透射率与厚度的关系; (c) hv与(αhv)2的关系; (d)光学带隙随薄膜厚度的变化
Figure 1. Properties of LNO monolayers (x = 0.07) with varying thicknesses: (a) Variations of carrier concentration, mobility and resistivity of films with different thicknesses; (b) optical transmittance characterization of films with varying thicknesses; (c) plots of hv vs. (αhv)2; (d) relationship between optical band gap values and film thickness.
图 2 Li掺杂对LNO单层膜物性的影响 (a) LNO薄膜Ni 2p3/2的XPS; (b) LNO薄膜的载流子浓度、迁移率和电阻率随Li掺杂的变化; (c)薄膜的光学透射率随Li掺杂的变化; (d)光学带隙随Li掺杂的变化
Figure 2. Properties of LNO films with varying Li-doping levels: (a) XPS of LNO films focusing on Ni 2p3/2; (b) relationship of carrier concentration, mobility, and resistivity of LNO films to Li doping levels; (c) optical transmittance characterization of the films; (d) relationship between optical band gap values and Li doping levels.
图 3 透明异质结的结构表征 (a) LNO/LSSO和LNO/LBSO异质结构的(00l)面的XRD线性扫描; (b) LNO/LSSO异质结构的横截面明场像和(c)各元素分布图像; (d), (e)异质结构的倒易空间衍射图; (f) LSSO和(g) LNO的快速傅里叶变换图案
Figure 3. Structural characterization of heterostructures: (a) XRD (00l) linear scans of LNO/LSSO and LNO/LBSO heterostructures; (b) cross-sectional bright field image and (c) energy dispersive X-ray spectroscopy image of the LNO/LSSO heterostructure; (d), (e) RSM results for heterostructures; (f), (g) FFT patterns of (f) LSSO and (g) LNO.
图 4 透明异质结构的整流特性 (a) LNO/LSSO (x = 0.03)的I-V曲线, 插图展示了样品的结构示意图; (b) LNO/LBSO (x = 0.03)的I-V曲线, 插图为测试示意图; (c) LNO/LSSO (x = 0.07)的I-V曲线; (d) LNO/LBSO (x = 0.07)的I-V曲线; (e) LNO/LSSO (x = 0.03)的I-V曲线半对数图; (f) LNO/LBSO (x = 0.03)的I-V曲线半对数图
Figure 4. Rectification characteristics of heterostructures: (a) I-V curve of LNO/LSSO (x = 0.03), with an inset showing the schematic of the heterostructure; (b) I-V curve of LNO/LBSO (x = 0.03), with an inset illustrating the tested sample; (c) I-V curve of LNO/LSSO (x = 0.07); (d) I-V curve of LNO/LBSO (x = 0.07); (e) I-V curve semilogarithmic plot of LNO/LSSO; (f) I-V curve semilogarithmic plot of LNO/LBSO.
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