Design and implementation of high-performance PbSe infrared focal plane array detectors based on surface passivation and through-hole technologies

LYU Quanjiang; LI Rongfan; HU Tianxi; WU Yong; LIU Junlin

doi:10.7498/aps.74.20241761

Abstract

Infrared focal plane array (IRFPA) detector, a key research focus in next-generation infrared detection technology, plays a crucial role in optoelectronic sensing. Here is the report on the integration and reliability of a PbSe-based IRFPA employing a row-column scanning readout architecture. This design features a surface passivation layer and through-hole structures to ensure robust electrical connectivity, thereby enhancing both stability and performance. The detector, with dimensions of 3.5 mm × 3.5 mm, a pixel size of 200 μm × 100 μm, and a pixel pitch of 200 μm, demonstrates structural integrity validated by electro-thermal simulations. At room temperature, the pixel-level and imaging assessments reveal an average detectivity value of 9.86×10⁹ Jones and a responsivity value of 1.03 A/W, with a 100% effective pixel yield. Remarkably, the device retains high stability, exhibiting only a 3.6% performance decline after 150-day air exposure, which is attributed to the protective effect of the passivation layer. Infrared imaging under different light intensities shows pronounced contrast, confirming the sensitivity of the detector to illumination gradients. These results provide critical technical insights and a theoretical framework for advancing high-performance, stable PbSe-based IRFPA detectors.

Keywords:

Authors and contacts

1.
Yongkang Hardware Technician College, Jinhua 321399, China
2.
School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China

Corresponding author: LYU Quanjiang, lvquanjiang@ujs.edu.cn ; LIU Junlin, liujunlin@ujs.edu.cn

Funds: Project supported by the Innovation/Entrepreneurship Program of Jiangsu Province, China (Grant No. JSSCTD202146).

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References

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Cited By

图 1 探测器最高温度随电压变化曲线, 插图为3 V工作偏压下的温度分布

Figure 1. Maximum temperature of detector as a function of bias voltage, with insets representing temperature distribution under 3 V working bias voltage

DownLoad: Full-Size Img PowerPoint

图 2 探测器最高温度随时间变化曲线, 插图为300 s时的温度分布

Figure 2. Maximum temperature of detector as a function of time, with insets representing temperature distribution at 300 seconds

DownLoad: Full-Size Img PowerPoint

图 3 PbSe IRFPA探测器制备流程图

Figure 3. Preparation process of PbSe IRFPA detector.

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图 4 (a) PbSe IRFPA探测器整体图像; (b) 金相显微镜下局部放大图

Figure 4. (a) Physical image of PbSe IRFPA detector; (b) local magnified view under metallographic microscope.

DownLoad: Full-Size Img PowerPoint

图 5 不同偏置电压下的电流变化　(a) 光电流和暗电流; (b) 光生电流; (c) 比探测率和响应率

Figure 5. Current varies with different bias voltages: (a) Light current and dark current; (b) photogenerated current; (c) specific detectivity and responsivity.

DownLoad: Full-Size Img PowerPoint

图 6 光电性能随光功率密度变化　(a) 光生电流; (b) 量子效率; (c) 比探测率和响应率

Figure 6. Photoelectric response varies with light intensity: (a) Photogenerated current; (b) quantum efficiency; (c) specific detectivity and responsivity.

DownLoad: Full-Size Img PowerPoint

图 7 不同入射角下的探测性能　(a) 比探测率分布; (b) 响应率分布

Figure 7. Photoelectric response at different incident angles: (a) Specific detectivity distribution; (b) responsivity distribution.

DownLoad: Full-Size Img PowerPoint

图 8 PbSe IRFPA探测器0和150天性能对比　(a) 光功率密度为0.199 mW/mm²下的I-t曲线; (b) 不同光功率密度下的比探测率对比; (c) 不同光功率密度下响应率对比

Figure 8. Comparison of 0 and 150 days performance of PbSe IRFPA detector: (a) Current varies time under 0.199 mW/mm²; (b) comparison of specific detectivity under different light intensity; (c) comparison of responsivity under different light intensity.

DownLoad: Full-Size Img PowerPoint

图 9 PbSe IRFPA探测器像元暗电阻分布(a) 和光电阻分布(b)

Figure 9. Dark resistance (a) and light resistance (b) distribution of PbSe IRFPA detector.

DownLoad: Full-Size Img PowerPoint

图 10 PbSe IRFPA探测器的成像性能　(a) 比探测率分布; (b) 响应率分布

Figure 10. Imaging performance of PbSe IRFPA detector: (a) Specific detectivity distribution; (b) responsivity distribution.

DownLoad: Full-Size Img PowerPoint

图 11 PbSe IRFPA探测器成像装置示意图

Figure 11. Schematic diagram of PbSe IRFPA detector imaging device.

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图 12 PbSe IRFPA探测器红外成像随光功率密度变化　(a) 0 mW/mm²; (b) 0.199 mW/mm²; (c) 1.69 mW/mm²; (d) 3.28 mW/mm²; (e) 6.17 mW/mm²; (f) 11.54 mW/mm²

Figure 12. Infrared imaging results of PbSe IRFPA detector vary with light density: (a) 0 mW/mm²; (b) 0.199 mW/mm²; (c) 1.69 mW/mm²; (d) 3.28 mW/mm²; (e) 6.17 mW/mm²; (f) 11.54 mW/mm².

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

[1]	袁继俊 2006 激光与红外 36 1009 Google Scholar Yuan J J 2006 Laser Infrared 36 1009 Google Scholar
[2]	Bhan R K, Dhar V 2019 Opto-Electron. Rev. 27 174 Google Scholar
[3]	Karim A, Andersson J Y 2013 IOP Conference Series: Materials Science and Engineering Karachi, Pakistan, June 24-26, 2013 p012001
[4]	Rogalski A, Martyniuk P, Kopytko M 2017 Appl. Phys. Rev. 4 031304 Google Scholar
[5]	Rogalski A 2012 Prog. Quantum Electron. 36 342 Google Scholar
[6]	Gupta M C, Harrison J T, Islam M T 2021 Mater. Adv. 2 3133 Google Scholar
[7]	Zhang G D, Zhu Q S, Xue B C, Li Y Z, Shi K H, Qiu J J 2024 Infrared 45 1 (in chinese) [张国栋, 朱庆帅, 薛奔驰, 李彦臻, 石康昊, 邱继军 2024 红外 45 1]Google Scholar Zhang G D, Zhu Q S, Xue B C, Li Y Z, Shi K H, Qiu J J 2024 Infrared 45 1 (in chinese)Google Scholar
[8]	Yang N, Yuan M F, Wang P, Zhang R B, Sun J, Mao H P 2019 J. Sci. Food Agric. 99 3459 Google Scholar
[9]	Guo Z M, Wang M M, Agyekum A A, Wu J Z, Chen Q S, Zuo M, El-Seedi H R, Tao F F, Shi J Y, Q O Y, Zou X B 2020 J. Food Eng. 279 109955 Google Scholar
[10]	Jiang H, Lin H, Lin J J, Adade S Y S S, Chen Q S, Xue Z L, Chan C M 2022 Food Control 133 108640 Google Scholar
[11]	Shen G H, Kang X C, Su J S, Qiu J B, Liu X, Xu J H, Shi J R, Mohamed S R 2022 Food Chem. 384 132487 Google Scholar
[12]	Sheng R, Cheng W, Li H H, Ali S, Agyekum A A, Chen Q S 2019 Postharvest Biol. Technol. 156 110952 Google Scholar
[13]	Beystrum T, R Himoto R, Jacksen N, Sutton M 2004 Infrared Technology and Applications XXX Orlando, United States, April 12–16, 2004 p287
[14]	Sanchez F J, Rodrigo M T, Vergara G, Lozano M, Santander J, Torquemada M C, Gomez L J, Villamayor V, Alvarez M, Verdu M, Almazán R 2005 Infrared Technology and Applications XXXI Orlando, United States, April 1, 2005 p441
[15]	Vergara G, Montojo M T, Torquemada M C, Rodrigo M T, Sanchez F J, Gomez L J, Almazan R M, Verdu M, Rodriguez P, Villamayor V, Alvarez M, Diezhandino J, Plaza J, Catalan I 2007 Opto-Electron. Rev. 15 110 Google Scholar
[16]	Green K, Yoo S S, Kauffman C 2014 Infrared Technology and Applications XL Baltimore, United States, May 5–9, 2014 p430
[17]	Shi K H, Liu Y, Luo Y M, Bian J N, Qiu J J 2021 RSC Adv. 11 36895 Google Scholar
[18]	Li Z, Chen Y Y, Lang H Z, Wan J H, Gao Y, Dong H T, Zhang X K, Feng W R 2022 J. Mater. Sci. -Mater. Electron. 33 5564 Google Scholar
[19]	Song J L, Feng W R, Ren Y S, Zheng D N, Dong H T, Zhu R, Yi L Y, Hu J F 2018 Vacuum 155 1 Google Scholar
[20]	Ren Y X, Li Y Q, Li W B, Zhao S, Chen H, Liu X Z 2022 Appl. Surf. Sci. 584 152578 Google Scholar
[21]	Qiu J J, Su L S, McDowell L L, Phan Q, Liu Y, Zhang G D, Yang Y M, Shi Z S 2023 ACS Appl. Mater. Interfaces 15 24541 Google Scholar
[22]	陈岩松, 任梓洋, 徐翰纶, 朱海明, 王垚, 吴惠桢 2022 红外与毫米波学报 41 980 Google Scholar Chen Y S, Ren Z Y, Xu H L, Zhu H M, Wang Y, Wu H Z 2022 J. Infrared Millim. Waves 41 980 Google Scholar
[23]	Moss T S 1961 J. Phys. Chem. Solids 22 117 Google Scholar
[24]	Yao Y F, An Y X, Dong J T, Wang Y, Tu K N, Liu Y X 2024 J. Mater. Res. Technol. 31 3374 Google Scholar
[25]	Yu M Y, Feng T L, Jiang Z Y, Huan Z Y, Lü Q J, Zhu Y, Xu Z W, Liu G W, Qiao G J, Liu J L 2023 Mater. Sci. in Semicond. Process 163 107540 Google Scholar
[26]	Huan Z Y, Lü Q J, Yu M Y, Li R F, Huang Z Y, Liu G W, Qiao G J, Liu J L 2024 Sens. Actuators A-Phys. 370 115254 Google Scholar
[27]	袁愿林, 姚昌胜, 王果, 陆敏 2012 固体电子学研究与进展 32 110 Google Scholar Yuan Y L, Yao C S, Wang G, Lu M 2012 Res. Prog. SSE 32 110 Google Scholar
[28]	Li X, Wu S E, Wu D, Zhao T X, Lin P, Shi Z F, Tian Y T, Li X J, Zeng L H, Yu X C 2024 InfoMat 6 e12499 Google Scholar
[29]	Qi Z Y, Fu X W, Yang T F, Li D, Fan P, Li H L, Jiang F, Li L H, Luo Z Y, Zhuang X J, Pan A L 2019 Nano Res. 12 1894 Google Scholar
[30]	Bae W K, Joo J, Padilha L A, Won J, Lee D C, Lin Q L, Koh W K, Luo H M, Klimov V I, Pietryga J M 2012 J. Am. Chem. Soc. 134 20160 Google Scholar
[31]	Reiss P, Protiere M, Li L 2009 Small 5 154 Google Scholar
[32]	Giansante C, Infante I 2017 J. Phys. Chem. Lett. 8 5209 Google Scholar
[33]	杨丹, 王登魁, 方铉, 房丹, 杨丽, 项超, 李金华, 王晓华 2023 激光与光电子学进展 60 53 Google Scholar Yang D, Wang D K, Fang X, Fang D, Yang L, Xiang C, Li J H, Wang X H 2023 Laser Optoelectron. Prog. 60 53 Google Scholar
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[35]	GB/T 17444–2013 红外焦平面阵列参数测试方法 2014 GB/T 17444–2013 Infraction flat array parameter test method 2014
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[37]	Wang Y, Gu Y, Cui A L, Li Q, He T, Zhang K, Wang Z, Li Z P, Zhang Z H, Wu P S, Xie R Z, Wang F, Wang P, Shan C X, Li H, Ye Z H, Zhou P, Hu W D 2022 Adv. Mater. 34 2107772 Google Scholar

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