[1] Zhao J, Zhang G Y, Shi D X 2013 Chin. Phys. B 22 057701
[2] Liu Z Y, Zhang J C, Duan H T, Xue J S, Lin Z Y, Ma J C, Xue X Y, Hao Y 2011 Chin. Phys. B 20 097701
[3] Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Acta Phys. Sin. 61 057304 (in Chinese)[宋建军, 张鹤鸣, 胡辉勇, 王晓艳, 王冠宇 2012 物理学报 61 057304]
[4] Rima K, Andersonb R, Boydb D, Cardonea F, Chana K, Chenb H, Christansena S, Chua J, Jenkinsa K, Kanarskyb T, Koestera S, Leeb B H, Leea K, Mazzeob V, Mocutab A, Mocutab D, Mooneya P M, Oldigesb P, Otta J, Ronsheimb P, Roya R, Steegenb A, Yanga M, Zhub H, Ieongb M, Wonga H S P 2003 Solid-State Electronics 47 1133
[5] Wang D, Ninomiya Masaharu, Nakamae Masahiko, Nakashima Hiroshi 2005 Appl. Phys. Lett. 86 122111
[6] Nayak D K, Woo J C S, Park J S, Wang K L, MacWilliams, K P 1993 Appl. Phys. Lett. 62 2853
[7] Stan G, Krylyuk S, Davydov A V, Levin I, Cook R F 2012 Nano Lett. 12 2599
[8] Smith D A, Holmberg V C, Korgel B A 2010 ACS Nano 4 2356
[9] Wei B, Zheng K, Ji Y, Zhang Y F, Zhang Z, Han X D 2012 Nano Lett. 12 4595
[10] Pang C Y, Lee G Y, Kim T, Kim S M, Kim H N, Ahn S H, Suh K Y 2012 Nat. Mater. 11 795
[11] Bai X D, Golberg D Y, Bando C, Zhi Y, Tang C C, Mitome M, Kurashima K 2007 Nano Lett. 7 632
[12] Wang Z L, Song J H 2006 Science 312 242
[13] Han X B, Kou L Z, Lang X L, Xia J B, Wang N, Qin R, Lu J, Xu J, Liao Z M, Zhang X Z, Shan X D, Song X F, Gao J Y, Guo W L, Yu D P 2009 Adv. Mater. 21 4937
[14] Han X B, Kou L Z, Zhang Z Y, Zhu X L, Xu J, Liao Z M, Guo W L, Yu D P 2012 Adv. Mater. 24 4707
[15] Xu S G, Guo W H, Du S W, Loy M M T, Wang N 2012 Nano Lett. 12 5802
[16] Signorello G, Karg S, Björk M T 2013 Nano Lett. 13 917
[17] Shao R W, Zheng K, Zhang Y F, Li Y J, Zhang Z, Han X D 2012 Appl. Phys. Lett. 101 233109
[18] Wang J, Rahman A, Ghosh A, Klimeck, Lundstrom G M 2005 Appl. Phys. Lett. 86 093113
[19] Hong K, Kim J, Lee S, Shin J K 2008 Nano Lett. 8 1335
[20] Shiri K, Kong Y, Buin A, Anantram M P 2008 Appl. Phys. Lett. 93 073114
[21] Sajjad R N, Alam K 2009 J. Appl. Phys. 105 044307
[22] Jin Z, Qiao L P, Guo C, Wang J A, Liu C 2013 Acta Phys. Sin. 62 058501 (in Chinese)[靳钊, 乔丽萍, 郭晨, 王江安, 刘策 2013 物理学报 62 058501]
[23] Zhang J H, Huang Q A, Yu H, Lei S Y 2009 Sensors 9 2746
[24] Cao J X, Gong X G, Wu R Q 2007 Phys. Rev. B 75 233302
[25] Leu P W, Svizhenko A, Cho K 2008 Phys. Rev. B 77 235305
[26] Zhao L X, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 6545 (in Chinese)[赵丽霞, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2010 物理学报 59 6545]
[27] Niquet Y M, Delerue C, Krzeminski C 2012 Nano Lett. 12 3545
[28] Fishchetti M V, Laux S E 1996 J. Appl. Phys. 80 2234
[29] Feste S F, Knoch J, Habicht S, Buca D, Zhao Q T, Mantl S 2009 Solid-state Electronics 53 1257
[30] Toriyama T, Funai D, Sugiyama S 2003 J. Appl. Phys. 93 561
[31] Yang Y L, Li X X 2011 Nanotech. 22 015501
[32] Neuzil P, Wong C C, Rebound J 2010 Nano Lett. 10 1248
[33] Lugstein A, Steinmair M, Steiger A, Kosina H, Bertagnolli E 2010 Nano Lett. 10 3204
[34] He R H, Yang P D 2006 Nat. Nanotech. 1 42
[35] Milne J S, Rowe A C H, Arscott S, Renner C 2010 Phys. Rev. Lett. 105 226802
[36] Qin Y, Zhang X N, Zheng K, Li H, Han X D, Zhang Z 2008 Appl. Phys. Lett. 93 063104
[37] Zheng K, Shao R W, Deng Q S, Zhang Y F, Li Y J, Han X D, Zhang Z, Zou J 2014 Appl. Phys. Lett. 104 013111
[38] Svensson K, Jompol Y, Olin H, Olsson E 2003 Rev. Sci. Instrum. 74 4945
[39] Shao R W, Zheng K, Wei B, Zhang Y F, Li Y J, Han X D, Zhang Z, Zou J 2014 Nanoscale 4 4936
[40] Han X D, Zhang Y F, Zheng K, Zhang X N, Zhang Z, Hao Y J, Guo X Y, Yuan J, Wang Z L 2007 Nano Lett. 7 452
[41] Han X D, Zheng K, Zhang Y F, Zhang X N, Zhang Z, Wang Z L 2007 Adv. Mater. 19 2112
[42] Zheng K, Han X D, Wang L H, Zhang Y F, Yue Y H, Qin Y, Zhang X N, Zhang Z 2009 Nano Lett. 9 2471
[43] Wang L H, Zheng K, Zhang Z, Han X D 2011 Nano Lett. 11 2382