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透明导电氧化物(TCO)是光电子学中的关键材料，与n型TCO相比，关于p型TCO材料的选择较少，其中NiO作为典型的p型TCO材料具有研发透明光电子器件的潜力。在这项研究中，使用脉冲激光沉积，在MgO(001)衬底上成功地得到了不同厚度和Li掺杂浓度的LixNi1-xO薄膜。结果表明，厚度和Li掺杂的增加都显著降低了薄膜的电阻率，并且厚度为50 nm与3%Li掺杂时，薄膜的带隙最大。在薄膜厚度与Li掺杂浓度对其物性调控研究的基础上，选择带隙最大的p型LixNi1-xO与n型La掺杂ASnO3薄膜构造了透明电子器件。I-V测试证实了该透明电子器件的整流特性以及基于透明导电材料pn结的成功构造。这项工作通过将p型NiO与n型ASnO3集成，拓展了透明电子器件的研究与潜在应用。Transparent conducting oxides (TCOs) are crucial materials in optoelectronics, yet p-type TCOs are less studied compared to n-type TCOs. NiO as a typical p-type TCO shows promising potential for transparent optoelectronic devices. In this study, we successfully fabricated LixNi1-xO thin films with varying thicknesses and Li doping levels on MgO(001) substrates using pulsed laser deposition. The results demonstrate that both increased thickness and Li doping levels reduce the resistivity of the films, with the maximum optical bandgap observed at a thickness of 50 nm and 3% Li doping levels. Based on the control of physical properties through film thickness and Li doping, p-type LixNi1-xO with the largest bandgap were selected to construct transparent electronic devices with n-type La-doped ASnO3 films. I-V tests confirmed the rectification properties of the heterostructures, successfully demonstrating the formation of pn junctions. This work enhanced the potential applications of transparent electronic devices by integrating p-type NiO with n-type ASnO3.
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Keywords:
- transparent conducting oxide /
- thin film /
- doping /
- pnjunction
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