基于狄拉克半金属纳米线的太赫兹可调七波段完美吸收器的模拟仿真

卢文强; 易颖婷; 宋前举; 周自刚; 易有根; 曾庆栋; 易早

doi:10.7498/aps.74.20241516

摘要

设计了一种高灵敏度、高品质因子、高品质因数、高频探测、双固定功能的太赫兹可调完美吸收器. 该吸收器可实现4—14.5 THz范围内7个波段的完美吸收. 在进行结构设计时将线阵结构的参数与周期进行了关联. 通过计算吸收器的相对阻抗来对器件宏观层面的电磁进行解释, 并通过分析共振频率点的表面电场和磁场分布, 来分析该器件的物理机制. 计算了7个共振频点的品质因子Q, 其中最大Q值为219.41. 通过改变外部折射率, 该吸收器的灵敏度和品质因数值最大可达5421.43 GHz/RIU和35.204 RIU^–1. 通过讨论关键参数对器件的影响, 得出该器件可实现双固定性能的选择、七波段吸收以及全波段反射. 通过改变狄拉克半金属的费米能级, 证明该吸收器具有良好的动态调节能力. 通过改变外部电磁波的入射角发现该器件在中低频段具有良好的稳定性, 但在高频段受外部入射角影响较大. 本文所提出的吸收器在成像、探测、检测等领域具有巨大的应用潜力, 相关工作对光电器件的设计提供了思路.

关键词:

Abstract

In this work, a tunable perfect absorber in the terahertz range is designed based on Dirac semimetal nanowires, featuring high sensitivity, quality factor, and dual functionality. The absorber achieves perfect absorptions across seven bands in a range of 0–14.5 THz: f₁ = 5.032 THz (84.43%), f₂ = 5.859 THz (96.23%), f₃ = 7.674 THz (91.36%), f₄ = 9.654 THz (99.02%), f₅ = 11.656 THz (93.84%), f₆ = 12.514 THz (98.47%), and f₇ = 14.01 THz (97.32%). To ensure structural stability during design, the periodicity of the wire array structure is carefully considered. Verification of the absorber’s performance is conducted through the calculation of impedance matching. The analyses of the surface electric field and magnetic field at resonance frequency elucidate the underlying physical mechanisms governing the absorber’s characteristics. The values of quality factor (Q) for the seven resonance points are computed, with a maximum Q of 219.41. Further investigations by changing the external refractive index show that the maximum sensitivity value and the figure of merit (FOM) value are 5421.43 GHz/RIU and 35.204 RIU^–1, respectively. Then, by discussing the influence of key parameters on the device, we conclude that the device can achieve the choice of dual fixed performance. Dynamic modulation capabilities are demonstrated by changing the Dirac semimetal’s Fermi energy. Additionally, by changing the incident angle of the external electromagnetic wave, it is found that the device has good stability in the medium frequency band and low frequency band, but it is greatly affected by the external incident angle in the high frequency band, thus necessitating careful consideration in practical applications. In conclusion, the proposed absorber holds significant promise for imaging, sensing, and detection applications, providing the valuable insights for designing optoelectronic devices.

Keywords:

metamaterial /
terahertz /
Dirac semi-metal /
electromagnetic multifrequency absorption /
Fano resonance /
tunable

作者及机构信息

1.
西南科技大学数理学院, 绵阳　621010

2.
中南大学物理学院, 长沙　410083

3.
湖北工程学院物理与电子信息工程学院, 孝感　432000

4.
吉首大学化学化工学院, 吉首　416000

通信作者: 宋前举, qjsong@swust.edu.cn ; 易早, yizaomy@swust.edu.cn

基金项目: 国家自然科学基金(批准号: 12204388, 12074151)和四川省科学技术厅科研基金(批准号: 2022NSFSC1804)资助的课题.

Authors and contacts

1.
School of Mathematics and Science, Southwest University of Science and Technology, Mianyang 621010, China

2.
College of Physics, Central South University, Changsha 410083, China

3.
School of Physics and Electronic-information Engineering, Hubei Engineering University, Xiaogan 432000, China

4.
School of Chemistry and Chemical Engineering, Jishou University, Jishou 416000, China

Corresponding author: SONG Qianju, qjsong@swust.edu.cn ; YI Zao, yizaomy@swust.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 12204388, 12074151) and the Scientific Research Foundation of the Science and Technology Department of Sichuan Province, China (Grant No. 2022NSFSC1804).

文章全文 : translate this paragraph

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施引文献

图 1 吸收器的单元结构组成及其结构参数

Fig. 1. Unit structure of the absorber and its structural parameters.

下载: 全尺寸图片幻灯片

图 2 不同费米能级下BDS介电常数的实部(a)和虚部(b)随频率的变化

Fig. 2. Variations of real part (a) and imaginary part (b) of the permittivity of BDS with frequency at different Fermi levels.

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图 3 (a)吸收器在4—14.5 THz范围内的特性曲线; (b)吸收器在其工作区间的相对阻抗(实部和虚部)示意图

Fig. 3. (a) Characteristic curves of the absorber in the range of 4–14.5 THz; (b) diagram of the relative impedance (real and imaginary parts) of the absorber in its operating interval.

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图 4 吸收器在不同频率处的电场分布　(a) f ₁ = 5.032 THz; (b) f ₂ = 5.859 THz; (c) f ₃ = 7.674 THz; (d) f ₄ = 9.654 THz; (e) f ₅ = 11.656 THz; (f) f ₆ = 12.514 THz; (g) f ₇ = 14.01 THz

Fig. 4. Electric field distribution of absorber at different frequencies: (a) f ₁ = 5.032 THz; (b) f ₂ = 5.859 THz; (c) f ₃ = 7.674 THz; (d) f ₄ = 9.654 THz; (e) f ₅ = 11.656 THz; (f) f ₆ = 12.514 THz; (g) f ₇ =14.01 THz.

下载: 全尺寸图片幻灯片

图 5 吸收器在不同频率处的磁场分布　(a) f ₁ = 5.032 THz; (b) f ₂ = 5.859 THz; (c) f ₃ = 7.674 THz; (d) f ₄ = 9.654 THz; (e) f ₅ = 11.656 THz; (f) f ₆ = 12.514 THz; (g) f ₇ = 14.01 THz

Fig. 5. Magnetic field distribution of absorber at different frequencies: (a) f ₁ = 5.032 THz; (b) f ₂ = 5.859 THz; (c) f ₃ = 7.674 THz; (d) f ₄ = 9.654 THz; (e) f ₅ = 11.656 THz; (f) f ₆ = 12.514 THz; (g) f ₇ =14.01 THz.

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图 6 (a)不同折射率下吸收器的吸收光谱; (b)谐振频率点随折射率的变化; (c) 7种模式的吸收率与折射率的对应关系

Fig. 6. (a) Absorption spectra of absorbers with different refractive indices; (b) the change of resonant frequency points with refractive index; (c) the corresponding relationship between absorptivity and refractive index of 7 modes.

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图 7 (a)不同BDS的费米能对吸收率的影响; (b) 7个共振频率点与费米能的关系; (c) 7个共振频率点处吸收率与费米能的关系

Fig. 7. (a) Effect of Fermi energy of different Dirac semi-metals on absorption efficiency; (b) the relationship between seven resonance frequency points and Fermi energy; (c) the relationship between the absorption rate and Fermi energy at seven resonance frequency points.

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表 1 本文所提出的吸收器的Q值与近年来类似吸收器之间的比较

Table 1. Comparison of the Q value of the proposed absorber with similar absorbers in recent years.

参考文献 [48] [49] [50] [51] [52] 本文

Q 55.59 73 77.89 106 154 219.41

下载: 导出CSV

表 2 本文所提出的吸收器的灵敏度与近年来类似吸收器之间的比较

Table 2. Comparison of the sensitivity of the proposed absorber with similar absorbers in recent years.

参考文献 [51] [54] [55] [56] [57] 本文

S/(GHZ·RIU^–1) 23.8 74.43 96.2 560 2475 5421.43

下载: 导出CSV

[1]	Li J T, Wang G C, Yue Z, Liu J Y, Li J, Zheng C L, Zhang Y T, Zhang Y, Yao J Q 2022 Opto-Electron Adv. 5 210062 Google Scholar
[2]	张学进, 陆延青, 陈延峰, 朱永元, 祝世宁 2017 物理学报 66 148705 Google Scholar Zhang X J, Lu Y Q, Chen Y F, Zhu Y Y, Zhu S N 2017 Acta Phys. Sin. 66 148705 Google Scholar
[3]	黄若彤, 李九生 2023 物理学报 72 054203 Google Scholar Huang R T, Li J S 2023 Acta Phys. Sin. 72 054203 Google Scholar
[4]	Yue Z, Li J T, Li J, Zheng C L, Liu J Y, Wang G C, Xu H, Chen M Y, Zhang Y T, Zhang Y, Yao J Q 2022 Opto-Electron Sci. 1 210014 Google Scholar
[5]	Li W X, Zhao W C, Cheng S B, Yang W X, Yi Z, Li G F, Zeng L C, Li H L, Wu P H, Cai S S 2023 Surf. Interfaces 40 103042 Google Scholar
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[9]	Zhao H, Wang X K, Liu S T, Zhang Y 2023 Opto-Electron Adv. 6 220012 Google Scholar
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[11]	Gigli C, Leo G 2022 Opto-Electron Adv. 5 210093 Google Scholar
[12]	Li F Y, Li Y X, Tang T T, Liao Y L, Lu Y C, Liu X Y, Wen Q Y 2022 J. Alloys Compd. 928 167232 Google Scholar
[13]	Zhu J, Xiong J Y 2023 Measurement 220 113302 Google Scholar
[14]	Cheng Y Z, Withayachumnankul W, Upadhyay A, Headland D, Nie Y, Gong R Z, Bhaskaran M, Sriram S, Abbott D 2015 Adv. Opt. Mater. 3 376 Google Scholar
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[21]	Zhan Y, Yin H Y, Wang J H, Yao H W, Fan C Z 2022 Res. Opt. 8 100255 Google Scholar
[22]	Mao Y, Zhang H, Xiong J, Liu X P, Wang Q Q, Wang J Q 2024 J. Phys. D: Appl. Phys. 57 255111 Google Scholar
[23]	Ullah K, Meng Y F, Sun Y, Yang Y K, Wang X J, Wang A R, Wang X R, Xiu F X, Shi Y, Wang F Q 2020 Appl. Phys. Lett. 117 011102 Google Scholar
[24]	Moll P J W, Nair N L, Helm T, Potter A C, Kimchi I, Vishwanath A, Analytis J G 2016 Nature 535 266 Google Scholar
[25]	Borisenko S, Gibson Q, Evtushinsky D, Zabolotnyy V, Büchner B, Cava R J 2014 Phys. Rev. Lett. 113 027603 Google Scholar
[26]	Cheng S B, Li W X, Zhang H F, Akhtar M N, Yi Z, Zeng Q D, Ma C, Sun T Y, Wu P H, Ahmad S 2024 Opt. Commun. 569 130816 Google Scholar
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[31]	Ma J, Wu P H, Li W X, Liang S R, Shangguan Q Y, Cheng S B, Tian Y H, Fu J Q, Zhang L B 2023 Diam. Relat. Mater. 136 109960 Google Scholar
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[39]	Li W X, Liu Y H, Ling L, Sheng Z X, Cheng S B, Yi Z, Wu P H, Zeng Q D, Tang B, Ahmad S 2024 Surf. Interfaces 48 104248 Google Scholar
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