Numerical investigation of non-ionizing energy loss of proton at an energy range of 300 eV to 1 GeV in silicon

Zhu Jin-Hui; Wei Yuan; Xie Hong-Gang; Niu Sheng-Li; Huang Liu-Xing

doi:10.7498/aps.63.066102

Abstract

The displacement damage due to non-ionizing energy loss (NIEL) is the main reason of photo-electronic device failure in space radiation environment. The basic mechanisms of NIEL are Coulomb and nuclear interactions of silicon atoms with incident protons at energies ranging from threshold to 1 GeV. In the low energy region where the Coulomb interaction is dominant, the NIEL can be calculated by analytical method and TRIM code. MCNPX/HTAPE3X is used to calculate NIEL when the nuclear elastic and non-elastic interactions between proton and target atoms are significant in the high energy range. The results show that it is reasonable to use MCNPX/HTAPE3X to evaluate the NIEL by recoiling nucleus caused by high energy protons. The combination of analytical method and TRIM code can calculate NIEL induced by Coulomb interaction in low energy range, which gives the NIEL of proton in silicon in an energy range from 300 eV to 1 GeV.

Keywords:

Authors and contacts

1.
Northwest Institute of Nuclear Technology, Xi’an 710024, China;
2.
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi’an 710024, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11175271).

References

[1]	Akkerman A, Barak J, Chadwick M B, Levinson J, Murat M, Lifshitz Y 2001 Radiat. Phys. Chem. 62 301
[2]	Summers G P, Burke E A, Shapiro P, Messenger S R, Walters R J 1993 IEEE Trans. Nucl. Sci. 40 1372
[3]	Jun I 2001 IEEE Trans. Nucl. Sci. 48 162
[4]	Luo W Y, Wang C Z, He X F, Fan S, Huang X L, Wang C S 2006 High Energy Phys. Nucl. Phys. 30 1088 (in Chinese) [罗文芸, 王朝壮, 贺新福, 樊胜, 黄小龙, 王传珊 2006 高能物理与核物理 30 1088]
[5]	Tang X X, Luo W H, Wang C Z, He F X, Zha Y Z, Fan S, Huang X L, Wang C S 2008 Acta Phys. Sin. 57 1266 (in Chinese) [唐欣欣, 罗文芸, 王朝壮, 贺新福, 查元梓, 樊胜, 黄小龙, 王传珊 2008 物理学报 57 1266]
[6]	Jun I, Xapsos M A, Messenger S R, Burke E A, Walters R J, Summer G P, Jordan T 2003 IEEE Trans. Nucl. Sci. 50 1924
[7]	Messenger S R, Burke E A, Xapsos M A, Summers G P, Walters R J, Jun I, Jordan T 2003 IEEE Trans. Nucl. Sci. 50 1919
[8]	Messenger S R, Burke E A, Summers G P, Xapsos M A, Walters R J, Jackson E M, Weaver B D 1999 IEEE Trans. Nucl. Sci. 46 1595
[9]	Jun I, Xapos M A, Burke E A 2004 IEEE Trans. Nucl. Sci. 51 3207
[10]	Fudan Univ., Tsinghua Univ., Peking Univ. 1997 Experimental Method of Nuclear Physics (Beijing: Atomic Energy Press) p47 (in Chinese) [复旦大学, 清华大学, 北京大学 1997 原子核物理实验方法 (北京: 原子能出版社) 第47页]
[11]	Pelowitz D B 2008 MCNPX User’s Manual Version 2.6.0 (Los Alamos: Los Alamos National Laboratory)

Cited By

[1]	Akkerman A, Barak J, Chadwick M B, Levinson J, Murat M, Lifshitz Y 2001 Radiat. Phys. Chem. 62 301
[2]	Summers G P, Burke E A, Shapiro P, Messenger S R, Walters R J 1993 IEEE Trans. Nucl. Sci. 40 1372
[3]	Jun I 2001 IEEE Trans. Nucl. Sci. 48 162
[4]	Luo W Y, Wang C Z, He X F, Fan S, Huang X L, Wang C S 2006 High Energy Phys. Nucl. Phys. 30 1088 (in Chinese) [罗文芸, 王朝壮, 贺新福, 樊胜, 黄小龙, 王传珊 2006 高能物理与核物理 30 1088]
[5]	Tang X X, Luo W H, Wang C Z, He F X, Zha Y Z, Fan S, Huang X L, Wang C S 2008 Acta Phys. Sin. 57 1266 (in Chinese) [唐欣欣, 罗文芸, 王朝壮, 贺新福, 查元梓, 樊胜, 黄小龙, 王传珊 2008 物理学报 57 1266]
[6]	Jun I, Xapsos M A, Messenger S R, Burke E A, Walters R J, Summer G P, Jordan T 2003 IEEE Trans. Nucl. Sci. 50 1924
[7]	Messenger S R, Burke E A, Xapsos M A, Summers G P, Walters R J, Jun I, Jordan T 2003 IEEE Trans. Nucl. Sci. 50 1919
[8]	Messenger S R, Burke E A, Summers G P, Xapsos M A, Walters R J, Jackson E M, Weaver B D 1999 IEEE Trans. Nucl. Sci. 46 1595
[9]	Jun I, Xapos M A, Burke E A 2004 IEEE Trans. Nucl. Sci. 51 3207
[10]	Fudan Univ., Tsinghua Univ., Peking Univ. 1997 Experimental Method of Nuclear Physics (Beijing: Atomic Energy Press) p47 (in Chinese) [复旦大学, 清华大学, 北京大学 1997 原子核物理实验方法 (北京: 原子能出版社) 第47页]
[11]	Pelowitz D B 2008 MCNPX User’s Manual Version 2.6.0 (Los Alamos: Los Alamos National Laboratory)

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Catalog

Vol. 63, Issue 6 - 2014-03-20

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