High performance graphene Hall sensors

Huang Le; Zhang Zhi-Yong; Peng Lian-Mao

doi:10.7498/aps.66.218501

Abstract

The state-of-the-art graphene Hall elements and integrated circuits are reviewed. By optimizing the growth and transfer of graphene and the micro-fabrication process of Hall sensor, graphene Hall elements and integrated circuits outperform conventional Hall sensors in many aspects. Graphene Hall elements exhibit better sensitivities, resolutions, linearities and temperature stabilities than commercialized Hall elements. Through developing a set of passivation processes, the stabilities of graphene Hall elements are improved. Besides, the flexible magnetic sensing and multifunctional detection applications based on graphene are demonstrated. In addition, graphene/silicon hybrid Hall integrated circuits are realized. By developing a set of low temperature processes (below 180℃), graphene Hall elements are monolithically integrated onto the passivation layer of silicon complementary metal oxide semiconductor chip. This work demonstrates that graphene possesses significant performance advantages in Hall magnetic sensing and potentially practical applications.

Keywords:

Authors and contacts

1.
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China

Corresponding author: Zhang Zhi-Yong, zyzhang@pku.edu.cn;lmpeng@pku.edu.cn ; Peng Lian-Mao, zyzhang@pku.edu.cn;lmpeng@pku.edu.cn

Funds: Project supported by the Nano Technology Key Development Program of China Key Research and Development Plan (Grant No. 2016YF0201900), the National Natural Science Foundation of China (Grant Nos. 61390504, 61621061), and the Beijing Science and Technology Commission Pilot and Material Innovation Project, China (Grant No. D161100002616001-3).

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Cited By

[1]	Xu H, Zhang Z, Shi R, Liu H, Wang Z, Wang S, Peng L 2013 Sci. Rep. UK 3 1207
[2]	Popovic R S 2004 Hall Effect Devices (2nd Ed.) (London: IOP Publishing)
[3]	Hara T, Mihara M, Toyoda N, Zama M 1982 IEEE Trans. Electron Dev. 29 78
[4]	Shibasaki I 1997 J. Cryst. Growth 175 13
[5]	Berus T, Oszwaldowski M, Grabowski J 2004 Sensor. Actuat. A: Phys. 116 75
[6]	Liu C S, Kou B M, Zhong L 2009 Practical Handbook of Holzer Sensors (Vol. 1) (Beijing: China Electric Power Press) pp100-250 (in Chinese) [刘畅生, 寇宝明, 钟龙 2009 霍尔传感器实用手册(第一版) (北京: 中国电力出版社) 第100250页]
[7]	Xu H, Huang L, Zhang Z, Chen B, Zhong H, Peng L 2013 Appl. Phys. Lett. 103 112405
[8]	Huang L, Zhang Z, Chen B, Ma X, Zhong H, Peng L 2014 Appl. Phys. Lett. 104 183106
[9]	Zhang Y, Mendez E E, Du X 2011 ACS Nano 5 8124
[10]	Kunets V P, Black W T, Mazur Y I, Guzun D, Salamo G J, Goel N, Mishima T D, Deen D A, Murphy S Q, Santos M B 2005 J. Appl. Phys. 98 014506
[11]	Kazakova O, Gallop J C, Cox D C, Brown E, Cuenat A, Suzuki K 2008 IEEE Trans. Magn. 44 4480
[12]	Kunets V P, Dobbert J, Mazur Y I, Salamo G J, Mueller U, Masselink W T, Kostial H, Wiebicke E 2008 J. Mater. Sci.: Mater. El. 19 776
[13]	Bolotin K I, Sikes K J, Jiang Z, Klima M, Fudenberg G, Hone J, Kim P, Stormer H L 2008 Solid State Commun. 146 351
[14]	Meng Y, Zhao Y, Hu C, Cheng H, Hu Y, Zhang Z, Shi G, Qu L 2013 Adv. Mater. 25 2326
[15]	Han T, Lee Y, Choi M, Woo S, Bae S, Hong B H, Ahn J, Lee T 2012 Nat. Photon. 6 105
[16]	Chen J H, Jang C, Adam S, Fuhrer M S, Williams E D, Ishigami M 2008 Nat. Phys. 4 377
[17]	Fang T, Konar A, Xing H, Jena D 2007 Appl. Phys. Lett. 91 092109
[18]	Huang L, Xu H, Zhang Z, Chen C, Jiang J, Ma X, Chen B, Li Z, Zhong H, Peng L 2014 Sci. Rep. 4 5548
[19]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[20]	Hummers W S, Offeman R E 1958 J. Am. Chem. Soc. 80 1339
[21]	de Heer W A, Berger C, Wu X, First P N, Conrad E H, Li X, Li T, Sprinkle M, Hass J, Sadowski M L, Potemski M, Martinez G 2007 Solid State Commun. 143 92
[22]	Kim K S, Zhao Y, Jang H, Lee S Y, Kim J M, Kim K S, Ahn J, Kim P, Choi J, Hong B H 2009 Nature 457 706
[23]	Gao L, Ren W, Xu H, Jin L, Wang Z, Ma T, Ma L, Zhang Z, Fu Q, Peng L, Bao X, Cheng H 2012 Nat. Commun. 3 699
[24]	Shi R, Xu H, Chen B, Zhang Z, Peng L 2013 Appl. Phys. Lett. 102 113102
[25]	Chen B, Huang H, Ma X, Huang L, Zhang Z, Peng L 2014 Nanoscale 6 15255
[26]	Bando M, Ohashi T, Dede M, Akram R, Oral A, Park S Y, Shibasaki I, Handa H, Sandhu A 2009 J. Appl. Phys. 105 07E909
[27]	Tang C, Li M, Li L J, Chi C C, Chen J C 2011 Appl. Phys. Lett. 99 112107
[28]	Panchal V, Cedergren K, Yakimova R, Tzalenchuk A, Kubatkin S, Kazakova O 2012 J. Appl. Phys. 111 07E509
[29]	Panchal V, Iglesias-Freire O, Lartsev A, Yakimova R, Asenjo A, Kazakova O 2013 IEEE Trans. Magn. 49 3520
[30]	Chen B, Huang L, Ma X, Dong L, Zhang Z, Peng L 2015 Carbon 94 585
[31]	Kim S, Nah J, Jo I, Shahrjerdi D, Colombo L, Yao Z, Tutuc E, Banerjee S K 2009 Appl. Phys. Lett. 94 062107
[32]	Wang Z, Shaygan M, Otto M, Schall D, Neumaier D 2016 Nanoscale 8 7683
[33]	Huang L, Zhang Z, Chen B, Peng L 2015 IEEE International Electron Devices Meeting (IEDM) Washington D. C., USA, December 6-10, 2015 33.5
[34]	Novoselov K S, Fal'Ko V I, Colombo L, Gellert P R, Schwab M G, Kim K 2012 Nature 490 192
[35]	Huang L, Zhang Z, Li Z, Chen B, Ma X, Dong L, Peng L 2015 Acs Appl. Mater. Inter. 7 9581
[36]	Lee J, Tao L, Parrish K N, Hao Y, Ruoff R S, Akinwande D 2012 Appl. Phys. Lett. 101 252109
[37]	Lee K, Qazi M, Kong J, Chandrakasan A P 2010 IEEE Trans. Electron Dev. 57 3418
[38]	Chen X, Akinwande D, Lee K, Close G F, Yasuda S, Paul B C, Fujita S, Kong J, Wong H S P 2010 IEEE Trans. Electron Dev. 57 3137
[39]	Lee K, Park H, Kong J, Chandrakasan A P 2013 IEEE Trans. Electron Dev. 60 383

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Vol. 66, Issue 21 - 2017-11-05

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