Experimental study on neutron single event effects of commercial SRAMs based on CSNS

Wang Xun; Zhang Feng-Qi; Chen Wei; Guo Xiao-Qiang; Ding Li-Li; Luo Yin-Hong

doi:10.7498/aps.69.20200265

Abstract

The experiment of neutron single event effect was carried out at China Spallation Neutron Source (CSNS) back-n on 13 kinds of commercial SRAM. The single event upset (SEU) cross section of each device was obtained, and multiple cell upsets (MCU) were extracted from the SEUs using a statistical method without layout information. The influences of the test pattern, feature size and device layout on the SEU cross section and MCU were studied. The results show that the test pattern has little influence on the SEU cross section of the devices, but has a great influence on the MCU ratio of some devices. The feature size has influence both on the SEU cross section and the MCU ratio of the devices. The influence on SEU cross section is not definite. The influence on the MCU ratio is definite. Both the ratio and the maximum size of the MCUs increase with the decrease of the feature size. The difference of layout has great influence both on the SEU cross section and the MCU ratio of the device. In addition, compared with the results of plateau irradiation, the ratio of MCU in CSNS back-n is less than that of plateau irradiation. There are two reasons for this difference. One is that the energy spectrum of CSNS back-n is softer than that of the atmospheric neutron. The other is the neutron beam at CSNS back-n is perpendicular to the device under test. Therefore, evaluating the atmospheric neutron SEE using CSNS back-n line may underestimate the MCU ratio of the device under test. The experimental data, analytical methods and results obtained in this paper are valuable for the researchers to carry out the atmospheric neutron SEE test and the evaluation of devices on atmospheric neutron SEE.

Keywords:

Authors and contacts

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China

Corresponding author: Wang Xun, wangxun@nint.ac.cn

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References

[1]	Wrobel F, Palau J M, Calvet M C, Bersillon O, Duarte H 2000 IEEE Trans. Nucl. Sci. 47 2580 Google Scholar
[2]	Hubert G, Bezerra F, Nicot J M, Artola L, Cheminet A, Valdivia J N, Mouret J M, Meyer J R, Cocquerez P 2014 IEEE Trans. Nucl. Sci. 61 1703 Google Scholar
[3]	Autran J L, Munteanu D 2015 Microelectron. Reliab. 55 2147 Google Scholar
[4]	Juan A C, Guillaume H, Francisco J F, Francesca V, Maud B, Hortensia M, Helmut P, Raoul V 2017 IEEE Trans. Nucl. Sci. 64 2188
[5]	Azambuja J R, Nazar G, Rech P, Carro L, Kastensmidt F L, Fairbanks T, Quinn H 2013 IEEE Trans. Nucl. Sci. 60 4243 Google Scholar
[6]	Normand E 1996 IEEE Trans. Nucl. Sci. 43 2742 Google Scholar
[7]	Quinn H, Graham P, Manuzzato A, Fairbanks T, Dallmann N, DesGeorges R 2010 IEEE Trans. Nucl. Sci. 57 3547
[8]	Abe S, Watanabe Y 2014 IEEE Trans. Nucl. Sci. 61 3519 Google Scholar
[9]	Granlund T, Granbom B, Olsson N 2003 IEEE Trans. Nucl. Sci. 50 2065 Google Scholar
[10]	Chen W, Guo X, Wang C, Zhang F, Qi C, Wang X, Jin X, Wei Y, Yang S, Song Z 2019 IEEE Trans. Nucl. Sci. 66 856 Google Scholar
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Cited By

图 1 CSNS反角白光中子源实验终端布局^[19]

Figure 1. Layout of back-n at CSNS^[19].

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图 2 CSNS反角白光中子源终端2与羊八井大气中子微分能谱对比

Figure 2. Comparison between the differential neutron energy spectra of CSNS back-n and Yangbajing.

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图 3 CSNS反角白光中子源辐照实验布局示意图

Figure 3. Layout of the irradiation experiment at CSNS back-n

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图 4 不同测试图形下测得的器件SEU截面对比

Figure 4. Comparison between the SEE cross sections of devices with different test patterns.

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图 5 不同厂商相同特征尺寸SRAM器件SEU截面对比　(a) 350 nm SRAM; (b) 130 nm SRAM; (c) 65 nm SRAM

Figure 5. Comparison of the SEE cross sections of the devices with the same feature sizes from different manufacturer: (a) 350 nm SRAM; (b) 130 nm SRAM; (c) 65 nm SRAM.

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图 6 同一厂商系列不同特征尺寸SRAM器件SEU截面对比　(a) HITECHI/RENESAS HM系列SRAM; (b) Cypress CY1318系列SRAM;(c) Cypress CY62126系列SRAM; (d) ISSI IS6X系列SRAM

Figure 6. Comparison of the SEE cross sections of devices from the same manufacturer with different feature sizes: (a) HITECHI/RENESAS HM SRAM; (b) Cypress CY1318SRAM; (c) Cypress CY62126SRAM; (d) ISSI IS6X SRAM

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图 7 不同测试图形下MCU占比　(a) IS61WV204816(40 nm); (b) CY62126DV(130 nm); (c) HM62V8100 (180 nm); (d) IS64WV25616 (65 nm)

Figure 7. MCU rates of the devices with different test patterns: (a) IS61WV204816(40 nm); (b) CY62126DV(130 nm); (c) HM62V8100 (180 nm); (d) IS64WV25616 (65 nm)

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图 8 不同厂商相同特征尺寸SRAM器件MCU情况

Figure 8. MCU rates and sizes of the devices with the same feature sizes from different manufacturer.

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图 9 同一厂商系列不同特征尺寸SRAM器件MCU情况 (a) CY7C1318系列不同特征尺寸MCU情况; (b) IS6X系列不同特征尺寸MCU情况

Figure 9. MCU rates and sizes of the devices from the same manufacturer with different feature sizes: (a) CY7C1318; (b) IS6X

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表 1 待测SRAM器件参数

Table 1. Parameters of the SRAM devices for test.

型号	制造商	容量/bits	特征尺寸/nm	工作电压/V
HM628512A	HITACHI	4 M (512 K × 8)	500	5
HM628512B	HITACHI	4 M (512 K × 8)	350	3.3
HM62V8100	RENESAS	8 M (1 M × 8)	180	3.3
IS62WV1288	ISSI	1 M (128 K × 8)	130	3.3
IS64WV25616	ISSI	4 M (256 K × 16)	65	3.3
IS61WV204816	ISSI	32 M (2 M × 16)	40	3.3
CY62126V	Cypress	1 M (64 K × 16)	350	3.0
CY62126BV	Cypress	1 M (64 K × 16)	250	3.0
CY62126DV	Cypress	1 M (64 K × 16)	130	3.0
CY7C1318AV18	Cypress	18 M (1 M × 18)	150	1.8
CY7C1318BV18	Cypress	18 M (1 M × 18)	90	1.8
CY7C1318KV18	Cypress	18 M (1 M × 18)	65	1.8
M328C	国产	256 K (32 K × 8)	65	1.8

DownLoad: CSV

表 2 在CSNS反角白光中子源的SEU测试结果

Table 2. Test results of the SEUs at CSNS back-n.

型号	特征尺寸/nm	测试图形	容量/Mbit	注量(>10 MeV)/10⁸n·cm^–2	翻转数/#	翻转截面/10^-14cm²·bit^–1	不确定度/%
HM628512A	500	0x00H	12	5.54	176	2.52	12.88
		0x55H	12	7.21	262	2.89	12.13
		0xAAH	12	5.38	215	3.18	12.47
		0xFFH	12	5.36	205	3.04	12.56
HM628512B	350	0x00H	12	5.71	207	2.88	12.54
		0x55H	8	7.03	197	3.34	12.64
		0xAAH	12	8.97	303	2.69	11.92
		0xFFH	12	3.26	114	2.78	14.03
HM62V8100	180	0x00H	24	5.31	343	2.57	11.75
		0x55H	24	5.29	367	2.76	11.67
		0xAAH	24	5.29	387	2.91	11.61
		0xFFH	24	5.36	342	2.53	11.76
IS62WV1288	130	0x00H	1	9.52	55	5.51	17.05
		0xAAH	3	8.05	116	4.58	13.97
		0xFFH	3	10.20	151	4.68	13.24
IS64WV25616	65	0x00H	8	4.76	271	6.79	12.08
		0x55H	8	4.76	339	8.49	11.77
		0xAAH	8	5.23	381	8.68	11.63
		0xFFH	8	4.50	275	7.28	12.06
IS61WV204816	40	0x00H	64	4.76	534	1.67	11.30
		0x55H	64	4.76	523	1.64	11.32
		0xAAH	64	4.76	589	1.84	11.22
		0xFFH	64	6.35	707	1.66	11.10
CY62126V	350	0x55H	3	9.88	64	2.06	16.29
CY62126V	350	0xAAH	3	9.88	71	2.28	15.81
CY62126BV	250	0x55H	3	128.00	516	1.28	11.33
CY62126DV	130	0x00H	3	10.40	115	3.53	14.00
		0x55H	3	10.60	139	4.16	13.45
		0xAAH	3	10.40	141	4.30	13.41
		0xFFH	3	9.04	106	3.73	14.26
CY7C1318AV18	150	0X55H	32	5.12	1293	7.52	10.80
CY7C1318BV18	90	0X55H	32	4.69	381	2.42	11.63
CY7C1318KV18	65	0X55H	32	5.09	374	2.19	11.65
M328C	65	0X55H	0.75	116	167	1.84	13.00

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表 3 单粒子MCU提取结果

Table 3. Extraction results of the single event multiple cell upsets.

型号	特征尺寸/nm	不同测试图形时MCU占比				最大MCU位数
型号	特征尺寸/nm	0x00	0x55H	0xAAH	0xFFH	最大MCU位数
HM628512A	500	0	0	0	0	1
HM628512B	350	0	0	0	0	1
HM62V8100	180	2.33%	5.94%	1.09%	4.68%	2
IS62WV1288	130	—	0	4.65%	0	2
IS64WV25616	65	9.59%	9.14%	6.01%	0.73%	3
IS61WV204816	40	28.29%	24.09%	28.52%	25.00%	7
CY62126V	350	0	0	0	0	1
CY62126BV	250	0	0	0	0	1
CY62126DV	130	40.00%	35.97%	35.46%	45.28%	3
CY7C1318AV18	150	—	36.13%	—	—	4
CY7C1318BV18	90	—	42.31%	—	—	6
CY7C1318KV18	65	—	56.80%	—	—	7
M328C	65	—	14.37%	—	—	2

DownLoad: CSV

[1]	Wrobel F, Palau J M, Calvet M C, Bersillon O, Duarte H 2000 IEEE Trans. Nucl. Sci. 47 2580 Google Scholar
[2]	Hubert G, Bezerra F, Nicot J M, Artola L, Cheminet A, Valdivia J N, Mouret J M, Meyer J R, Cocquerez P 2014 IEEE Trans. Nucl. Sci. 61 1703 Google Scholar
[3]	Autran J L, Munteanu D 2015 Microelectron. Reliab. 55 2147 Google Scholar
[4]	Juan A C, Guillaume H, Francisco J F, Francesca V, Maud B, Hortensia M, Helmut P, Raoul V 2017 IEEE Trans. Nucl. Sci. 64 2188
[5]	Azambuja J R, Nazar G, Rech P, Carro L, Kastensmidt F L, Fairbanks T, Quinn H 2013 IEEE Trans. Nucl. Sci. 60 4243 Google Scholar
[6]	Normand E 1996 IEEE Trans. Nucl. Sci. 43 2742 Google Scholar
[7]	Quinn H, Graham P, Manuzzato A, Fairbanks T, Dallmann N, DesGeorges R 2010 IEEE Trans. Nucl. Sci. 57 3547
[8]	Abe S, Watanabe Y 2014 IEEE Trans. Nucl. Sci. 61 3519 Google Scholar
[9]	Granlund T, Granbom B, Olsson N 2003 IEEE Trans. Nucl. Sci. 50 2065 Google Scholar
[10]	Chen W, Guo X, Wang C, Zhang F, Qi C, Wang X, Jin X, Wei Y, Yang S, Song Z 2019 IEEE Trans. Nucl. Sci. 66 856 Google Scholar
[11]	Lee U T, Monga S, Choi U, Lee J, Pae S 2018 IEEE Trans. Nucl. Sci. 65 1255 Google Scholar
[12]	王勋, 张凤祁, 陈伟, 郭晓强, 丁李利, 罗尹虹 2019 物理学报 68 052901 Google Scholar Wang X, Zhang F Q, Chen W, Guo X Q, Ding L L, Luo Y H 2019 Acta Phys. Sin. 68 052901 Google Scholar
[13]	Dyer C S, Clucas S N, Sanderson C, Frydland A D, Green R T 2004 IEEE Trans. Nucl. Sci. 51 2817 Google Scholar
[14]	Weulersse C, Guibbaud N, Beltrando A L, Galinat J, Beltrando C, Miller F, Trochet P, Alexandrescu D 2017 IEEE Trans. Nucl. Sci. 64 2268
[15]	郭晓强, 郭红霞, 王桂珍, 林东生, 陈伟, 白小燕, 杨善潮, 刘岩 2009 强激光与粒子束 21 1547 Guo X Q, Guo H X, Wang G Z, Ling D S, Chen W, Bai X Y, Yang S C, Liu Y 2009 High Power Laser Particle Beams 21 1547
[16]	Yang W, Li Y, Li Y, Hu Z, Xie F, He C, Wang S, Zhou B, He H, Khan W, Liang T 2019 Microelectron. Reliab. 99 119 Google Scholar
[17]	胡志良, 杨卫涛, 李永宏, 李洋, 贺朝会, 王松林, 周斌, 于全芝, 何欢, 谢飞, 白雨蓉, 梁天骄 2019 物理学报 68 238502 Google Scholar Hu Z L, Yang W T, Li Y H, Li Y, He C H, Wang S L, Zhou B, Yu Q Z, He H, Xie F, Bai Y R, Liang T J 2019 Acta Phys. Sin. 68 238502 Google Scholar
[18]	JEDEC, Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices: JESD89 A, JEDEC STANDARD, vol.89, JEDEC Solid State Technology Association
[19]	Ni W, Jing H, Zhang L, Ou L 2018 Radiat. Phys. Chem. 152 43 Google Scholar
[20]	鲍杰, 陈永浩, 张显鹏, 等 2019 物理学报 68 080101 Google Scholar Bao J, Chen Y H, Zhang X P, et al. 2019 Acta Phys. Sin. 68 080101 Google Scholar
[21]	Ahlbin, J R, Atkinson N M, Gadlage M J, Gaspard N J, Bhuva B L, Loveless T D, Zhang E X, Chen L, Massengill L W 2011 IEEE Trans. Nucl. Sci. 58 2585 Google Scholar
[22]	Lilja K, Bounasser M, Wen S J, et al. 2013 IEEE Trans. Nucl. Sci. 60 2782 Google Scholar
[23]	He Y, Chen S, Chen J, Chi Y, Liang B, Liu B, Qin J, Du Y, Huang P 2012 IEEE Trans. Nucl. Sci. 59 2772 Google Scholar
[24]	Atkinson N M, Witulski A F, Holman W T, et al. 2011 IEEE Trans. Nucl. Sci. 58 885 Google Scholar
[25]	Wang X, Ding L, Luo Y, Chen W, Zhang F, Guo X 2020 IEEE Trans. Nucl. Sci. 67 1443 Google Scholar
[26]	王勋, 罗尹虹, 丁李利, 张凤祁, 陈伟, 郭晓强, 王坦 2020 原子能科学技术 Google Scholar Wang X, Luo Y H, Ding L L, Zhang F Q, Chen W, Guo X Q, Wang T 2020 Atom. Energy Sci. Technol.Google Scholar
[27]	Radaelli D, Puchner H, Wong S, Daniel S 2005 IEEE Trans. Nucl. Sci. 52 2433 Google Scholar
[28]	Yasuo Y, Hironaru Y, Eishi I, Hideaki K, Masatoshi S, Takashi A, Shigehisa Y 2007 IEEE Trans. Nucl. Sci. 54 1030 Google Scholar
[29]	Zhang Z G, Liu J, Hou M D, et al. 2013 Chin. Phys. B 22 086102 Google Scholar
[30]	Ikeda N, Kuboyama S, Matsuda S, Handa T 2005 IEEE Trans. Nucl. Sci. 52 2200 Google Scholar

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Vol. 69, Issue 16 - 2020-08-20

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