Photoelectric modulation and resistive switching characteristic of ReSe<sub>2</sub>/WSe<sub>2</sub> memtransistor

Yu Xue-Ling; Chen Feng-Xiang; Xiang Tao; Deng Wen; Liu Jia-Ning; Wang Li-Sheng

doi:10.7498/aps.71.20221154

Abstract

Memtransistor is a multiterminal device combining the concepts of memristor and field-effect transistor. Two-dimensional transition metal sulfides have unique electronic structure and properties, and they are widely used in electronic devices, energy conversions, memories and other fields. In this work, a two-dimensional ReSe₂/WSe₂ heterostructure memtransistor is prepared, then the resistive switching characteristics under the electrical modulation, optical modulation, and electric-optical dual gate control are discussed. The results show that the gate control is an effective modulation method, which can change the on/off ratio of the device from 10¹ to 10⁵. Then, the resistance and on/off ratio of the memtransistor can be controlled by changing the light wavelength and the illumination power. Moreover, the switching ratio of the device can also be changed in a range of 10²–10⁵ by electric and light dual-gate control, and the reasons for the change of resistance states of the device under different modulation conditions are analyzed. Furthermore, after 225 cycles and 1.9 × 10⁴ s, the ReSe₂/WSe₂ heterostructure memtransistor still maintains a switch ratio close to 10⁴, indicating the good stability and durability of the device. It demonstrates that the ReSe₂/WSe₂ memtransistor will be one of potential candidates for the next- generation nonvolatile memory applications.

Keywords:

Authors and contacts

Department of Physics Science and Technology, School of Science, Wuhan University of Technology, Wuhan 430070, China

Corresponding author: Chen Feng-Xiang, phonixchen79@whut.edu.cn ; Wang Li-Sheng, wang_lesson@whut.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51702245), the National Key Research and Development Program of China (Grant Nos. 2018YFE0111500, 2019YFA0704900), the Open Fund Project of State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (Wuhan University of Technology), China (Grant No. 2021-KF-16), and the Fundamental Research Fund for the Central Universities, China (Grant No. WUT2021III065JC)

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References

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Cited By

图 1 ReSe₂/WSe₂异质结晶体管的结构图

Figure 1. Structure diagram of the ReSe₂/WSe₂ heterojunction memtransistor

DownLoad: Full-Size Img PowerPoint

图 2 ReSe₂/WSe₂异质结的形貌表征　(a) ReSe₂/WSe₂异质结的AFM图; (b) 沿图(a)中白色箭头的厚度数据图; (c) WSe₂和ReSe₂的拉曼光谱图

Figure 2. Surface topography image of ReSe₂/WSe₂ heterojunction memtransistor: (a) AFM image of ReSe₂/WSe₂ heterojunction; (b) height profile of ReSe₂/WSe₂ along the thin white line in panel (a); (c) Raman spectra of the WSe₂ and ReSe₂ layer

DownLoad: Full-Size Img PowerPoint

图 3 在0 V栅压下, Au/ReSe₂/WSe₂/Au记忆晶体管的阻变特性　(a) 在不同源漏扫描电压下的I_d-V_ds特性曲线; (b) 连续225次循环周期下器件在V_ds = 2.4 V时的高低阻值变化图; (c) 器件在室温下高低阻态保持特性图

Figure 3. Resistance characteristics of the Au/ReSe₂/WSe₂/Au memtransistor at V_g = 0 V: (a) I_d-V_ds characteristic curves of Au/ReSe₂/WSe₂/Au memtransistor at different source drain sweeping voltages; (b) reversible resistance switching between the HRS and LRS over 225 cycles at V_ds = 2.4 V; (c) the retention characteristics of the device at room temperature

DownLoad: Full-Size Img PowerPoint

图 4 ReSe₂/WSe₂记忆晶体管的阻变转换机制分析　(a) ReSe₂和WSe₂单独的能带图; (b) ReSe₂/WSe₂异质结的平衡能带图; (c) 负偏置电压下的双对数I_d-V_ds曲线

Figure 4. Resistance switching mechanism analysis of ReSe₂/WSe₂ memtransistor: (a) Energy band arrangement for ReSe₂ and WSe₂; (b) energy band diagram of ReSe₂/WSe₂ heterojunction; (c) logarithmic I_d-V_ds curves of the memtransistor in the negative bias region

DownLoad: Full-Size Img PowerPoint

图 5 在–1 V < V_g < 1 V范围中, 不同栅压下ReSe₂/WSe₂记忆晶体管的阻变特性　(a) 负栅压V_g = –0.1— –1 V时的I_d-V_ds特性曲线; (b) 正栅压V_g = 0.1—1 V时的I_d-V_ds特性曲线(0 V作为参考)

Figure 5. Resistance characteristics of ReSe₂/WSe₂ memtransistors at different gate voltages in the range of –1 V < V_g < 1 V: (a) I_d-V_ds characteristic curves at negative gate voltage V_g = –0.1−–1 V; (b) I_d-V_ds characteristic curves at positive gate voltage V_g = 0.1−1 V (the black line with V_g = 0 V is as a reference)

DownLoad: Full-Size Img PowerPoint

图 6 高栅压(|V_g| > 10 V)时, 不同栅压下Au/ReSe₂/WSe₂/Au器件的阻变特性　(a) 负栅压V_g = –10—–25 V时的I_d-V_ds特性曲线(其中0 V曲线作为参考); (b) 正栅压V_g = 10—25 V时的I_d-V_ds特性曲线

Figure 6. Resistance characteristics of Au/ReSe₂/WSe₂/Au device at higher gate voltages (|V_g| > 10 V): (a) I_d-V_ds characteristic curves at negative gate voltages V_g = –10−–25 V (the black line with V_g = 0 V is as a reference) ; (b) I_d-V_ds characteristic curves at positive gate voltages V_g = 10−25 V

DownLoad: Full-Size Img PowerPoint

图 7 Au/ReSe₂/WSe₂/Au记忆晶体管的简化能带图(V_ds < 0)　(a) V_g = 0 V; (b) V_g < 0 V; (c) V_g > 0 V

Figure 7. Simplified band diagram of Au/ReSe₂/WSe₂/Au memtransistor (V_ds < 0): (a) V_g = 0 V; (b) V_g < 0 V; (c) V_g > 0 V

DownLoad: Full-Size Img PowerPoint

图 8 Au/ReSe₂/WSe₂/Au器件在不同波长光栅调控下的I_d-V_ds曲线

Figure 8. I_d-V_ds curves of the Au/ReSe₂/WSe₂/Au device under optical modulation with different wavelengths

DownLoad: Full-Size Img PowerPoint

图 9 不同波长、不同光强下器件的I_d-V_ds特性曲线　(a) 500 nm光照; (b) 800 nm光照; (c) 1000 nm光照

Figure 9. I_d-V_ds curves of the device under different wavelengths and powers: (a) 500 nm illumination; (b) 800 nm illumination; (c) 1000 nm illumination

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图 10 500 nm波长光照和电场同时调控下器件的阻变特性　(a) 负栅压V_g = –5—25 V时的I_d-V_ds曲线; (b) 正栅压V_g = 5—25 V时的I_d-V_ds曲线

Figure 10. Resistance characteristics of electric and light dual-gate tunable memtransistor with illumination wavelength of 500 nm: (a) I_d-V_ds curves at negative gate voltages V_g = –5–25 V; (b) I_d-V_ds curves at positive gate voltages V_g = 5–25 V

DownLoad: Full-Size Img PowerPoint

图 11 光场和电场的双栅协控下, Au/ReSe₂/WSe₂/Au记忆晶体管特性　(a) 器件的高低阻态随栅压、波长的变化; (b) 开关比随栅压、波长的变化

Figure 11. Electric and light dual-gate tunable Au/ReSe₂/WSe₂/Au memtransistor: (a) The high and low resistance states of the devices under different gate voltages and different incident wavelengths; (b) on/off ratio of the devices under different gate voltages and different incident wavelengths.

DownLoad: Full-Size Img PowerPoint

表 1 不同正栅压下器件的详细参数

Table 1. Detailed parameters of the device under different positive gate voltages

	栅压 V_g/V
	0	1	10	20	25
HRS阻值/Ω	6.31 × 10¹¹	4.36 × 10¹¹	1.20 × 10¹⁰	8.75 × 10⁸	5.26 × 10⁸
LRS阻值/Ω	2.37 × 10⁶	4.31 × 10⁶	5.59 × 10⁶	9.66 × 10⁶	1.12 × 10⁷
开关比	2.66 × 10⁵	1.01 × 10⁵	2.14 × 10³	9.06 × 10¹	4.70 × 10¹

DownLoad: CSV

[1]	Chua L 1971 IEEE Trans. Circuit Theory 5 507 Google Scholar
[2]	Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80 Google Scholar
[3]	Cheng S L, Fan Z, Rao J J, Hong L Q, Huang Q C, Tao R Q, Hou Z P, Qin M H, Zeng M, Lu X B, Zhou G F, Yuan G L, Gao X S, Liu J M 2020 Iscience 23 101874 Google Scholar
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[5]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632 Google Scholar
[6]	Xu X W, Ding Y K, Hu S X B, Niemier M, Cong J, Hu Y, Shi Y Y 2018 Nat. Electron. 1 216 Google Scholar
[7]	Zeng M Q, Xiao Y, Liu J X, Yang K N, Fu L 2018 Chem. Rev. 118 6236 Google Scholar
[8]	Nguyen D A, Oh H M, Duong N T, Bang S, Yoon S J, Jeong M S 2018 ACS Appl. Mater. Interfaces 10 10322 Google Scholar
[9]	Shim J, Oh S, Kang D H, Jo S H, Ali M H, Choi W Y, Heo K, Jeon J, Lee S, Kim M, Song Y J, Park J H 2016 Nat. Commun. 7 13413 Google Scholar
[10]	Yoshida M, Suzuki R, Zhang Y, Nakano M, Iwasa Y 2015 Sci. Adv. 1 e1500606 Google Scholar
[11]	Vu Q A, Kim H, Nguyen V L, Won U Y, Adhikari S, Kim K, Lee Y H, Yu W J 2017 Adv. Mater. 29 1703363 Google Scholar
[12]	Xu R J, Jang H, Lee M H, Amanov D, Cho Y, Kim H, Park S, Shin H J, Ham D 2019 Nano Lett. 19 2411 Google Scholar
[13]	Park M, Park S, Yoo K H 2016 ACS Appl. Mater. Interfaces 8 14046 Google Scholar
[14]	John R A, Liu F C, Chien N A, Kulkarni M R, Zhu C, Fu Q D, Basu A, Liu Z, Mathews N 2018 Adv. Mater. 30 1800220 Google Scholar
[15]	Sangwan V K, Lee H S, Bergeron H, Beck M E, Chen K S, Hersam M C, Balla I 2018 Nature 554 500 Google Scholar
[16]	Zhong Y N, Gao X, Xu J L, Siringhaus H, Wang S D 2020 Adv. Electron. Mater. 6 1900955 Google Scholar
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[19]	Kim M, Ge R J, Wu X H, Lan X, Tice J, Lee J C, Akinwande D 2018 Nat. Commun. 9 2524 Google Scholar
[20]	Rehman S, Kim H, Khan M F, Hur J H, Eom J, Kim D K 2021 J. Alloys Compd. 855 157310 Google Scholar
[21]	殷俊 2019 硕士学位论文 (北京: 清华大学) Yin J 2019 M. S. Thesis (Beijing: Tsing University) (in Chinese)
[22]	Tian X, Liu Y 2021 J. Semicond. 42 032001 Google Scholar
[23]	Zhou X, Hu X Z, Zhou S S, Song H Y, Zhang Q, Pi L J, Li L, Li H Q, Lü J T, Zhai T Y 2018 Adv. Mater. 30 1703286 Google Scholar
[24]	Ali M H, Kang D H, Park J H 2017 Org. Electron. 53 14
[25]	Li D, Wu B, Zhu X J, Wang J T, Ryu B, Lu W D, Liang X G 2018 ACS Nano 12 9240 Google Scholar
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[30]	Yang Y C, Gao P, Gaba S, Chang T, Pan X Q, Lu W 2012 Nat. Commun. 3 732 Google Scholar
[31]	Jang M H, Agarwal R, Nukala P, Choi D, Johson A T C, Chen I W, Agarwal R 2016 Nano Lett. 16 2139 Google Scholar
[32]	田学伟, 王永生, 张璐, 刘安琪, 何大伟 2018 中国科技信息 13 98 Google Scholar Tian X W, Wang Y S, Zhang L, Liu A Q, He D W 2018 Chin. Sci. Technol. Inf. 13 98 Google Scholar
[33]	Yin S Q, Song C, Sun Y M, Qiao L L, Wang B L, Sun Y F, Liu K, Pan F, Zhang X Z 2019 ACS Appl. Mater. Interfaces 11 43344 Google Scholar
[34]	张璐 2016 硕士学位论文 (北京: 北京交通大学) Zhang L 2016 M. S. Thesis (Beijing: Beijing Jiaotong University) (in Chinese)
[35]	夏风梁, 石凯熙, 赵东旭, 王云鹏, 范翊, 李金华 2021 发光学报 42 257 Google Scholar Xia F L, Shi K X, Zhao D X, Wang Y P, Fan Y, Li J H 2021 Chin. J. Lumin. 42 257 Google Scholar

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Photoelectric modulation and resistive switching characteristic of ReSe₂/WSe₂ memtransistor

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Corresponding author: Chen Feng-Xiang, phonixchen79@whut.edu.cn ; Wang Li-Sheng, wang_lesson@whut.edu.cn

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Photoelectric modulation and resistive switching characteristic of ReSe2/WSe2 memtransistor

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Corresponding author: Chen Feng-Xiang, phonixchen79@whut.edu.cn ; Wang Li-Sheng, wang_lesson@whut.edu.cn

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Photoelectric modulation and resistive switching characteristic of ReSe₂/WSe₂ memtransistor