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采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜.利用傅里叶变换红外吸收对制备薄膜进行了结构方面的测试分析.结果表明：随衬底温度的升高，材料 中的氢含量总的趋势下降；傅里叶变换红外吸收和二次离子质谱测试结果都显示薄膜中氧含 量随衬底温度的升高而增加（在1019cm-3量级）；与高衬底温度相 比，低衬底温度制备的材料易于后氧化，这说明低温制备材料的稳定性不好.
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关键词:
- 甚高频等离子体增强化学气相沉积 /
- 微晶硅薄膜 /
- 傅里叶变换红外吸收
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperat ures (Ts). Analysis of materials structure was conducted using Fourie r tra nsform infrared (FTIR). The results showed that hydrogen content of the samples decreased with the increase of Ts. The results of FTIR and secondary ion m ass spectra indicated that the oxygen content of the samples increased with the increase of Ts. Compared with those at higher Ts, samples prepared at low Ts easily adsorbed oxygen, and showed bad stability.-
Keywords:
- very high frequency plasma-enhanced chemical vapor deposition, microcrystalline silicon thin films, Fourier transform infrared /
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