非铅卤素钙钛矿及其阻变性能研究进展

曾凡菊; 谭永前; 唐孝生; 张小梅; 尹海峰

doi:10.7498/aps.70.20210065

摘要

近年来, 铅基卤素钙钛矿因其制备工艺简单、载流子扩散距离长以及离子迁移速率快等优点而被应用于阻变存储器. 然而, 铅基卤素钙钛矿结构中的铅对人类健康与环境保护存在威胁, 限制了铅基卤素钙钛矿在数据存储领域的实际应用. 研究者们针对铅基钙钛矿铅毒性的问题展开了一系列研究. 其中, 非铅卤素钙钛矿因不含铅而被认为是最有前景的下一代新型阻变存储介质材料. 最近几年, 锡基、铋基、锑基和铜基等非铅卤素钙钛矿被引入阻变存储器领域. 本文系统地综述了非铅卤素钙钛矿材料及其阻变性能, 归纳了非铅卤素钙钛矿的阻变性能及其阻变机理, 指出了非铅卤素钙钛矿材料应用于阻变存储器存在的关键问题, 为进一步研究非铅钙钛矿阻存储器提供了参考.

关键词:

Abstract

With the rapid development of the information age, the demand for information storage capacity and miniaturization of memory units has been being increased. However, the commonly used silicon-based flash memory has nearly approached to its physical limit. The resistive switching random access memory (ReRAM) has become one of the promising candidates for the next-generation non-volatile memory due to its simple structure, fast operation speed, excellent flexibility, and long endurance. Recently, we witnessed that the lead halide perovskites, as hot star materials, have been widely used in optoelectronic fields owning to their advantages of low cost, excellent photoelectric properties, and solution process ability. Moreover, the lead halide perovskite has been successfully used as the active layer in ReRAM device because of its tunable bandgap, long charge carrier diffusion length, fast ion migration, and high charge carrier mobility. Whereas the toxicity of lead in halide perovskite is a very horrible problem in lead halide perovskite-based ReRAM devices. The lead-free halide perovskite is considered to be the most promising material for perovskite-based ReRAM devices because it does not contain lead element. Most recently, a large number of scientists from different groups have begun to study lead-free perovskite-based ReRAM devices. For example, tin, bismuth, antimony, and copper-based halide perovskite materials have been utilized in ReRAM devices and exhibited excellent resistance switching (RS) performances. Here in this paper, the recent development of lead-free perovskite and its RS performance are reviewed, including lead-free halide perovskite materials, RS performances, and RS mechanisms of lead-free perovskite-based ReRAM. Finally, the key problems and development prospects of lead-free perovskite-based ReRAM are also presented, which provides a fundamental step towards developing the RS performance based on lead-free halide perovskites.

Keywords:

lead-free halide perovskite /
resistive switching random access memory /
resistance switching performance /
mechanism of resistance switching

作者及机构信息

1.
凯里学院大数据工程学院, 凯里　556011

2.
重庆大学光电工程学院, 重庆　400044

通信作者: 曾凡菊, zengfanju@cqu.edu.cn ; 唐孝生, xstang@cqu.edu.cn ;

基金项目: 国家自然科学基金(批准号: 61975023, 61875211, 51602033, 61520106012)、凯里学院博士专项课题(批准号: BS202004, BS201301)、凯里学院学术新苗培养及创新探索专项课题(批准号: 黔科合平台人才[2019]01-4)和贵州省教育厅创新群体重大研究项目(批准号: 黔教合KY字[2018]035)资助的课题

Authors and contacts

1.
School of Big Data Engineering, Kaili University, Kaili 556011, China

2.
College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China

Corresponding author: Zeng Fan-Ju, zengfanju@cqu.edu.cn ; Tang Xiao-Sheng, xstang@cqu.edu.cn ;

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61975023, 61875211, 51602033, 61520106012), the Doctoral Project of Kaili University, China (Grant Nos. BS202004, BS201301), the Academic New Seedling Cultivation and Innovation Exploration Special Project of Kaili University, China (Grant No. Qian Ke He Ping Tai Ren Cai [2019]01-4), and the Major Research Projects of Innovative Groups in Education Department of Guizhou Province of China (Grant No. Qian Jiao He KY[2018]035)

文章全文 : translate this paragraph

参考文献

[1]	Yang J J, Strukov D B, Stewart D R 2013 Nat. Nanotechnol. 8 13 Google Scholar
[2]	Choi S, Shin J H, Lee J, Sheridan P, Lu W. D 2017 Nano Lett. 17 3113 Google Scholar
[3]	Zidan M A, Strachan J P, Lu W D 2018 Nat. Electron. 1 22 Google Scholar
[4]	Mao D, Mejia I, Salas-Villasenor A L, Singh M, Stiegler H, Gnade B E, Quevedo-Lopez M A 2013 Org. Electron. 14 505 Google Scholar
[5]	Jinnai B, Zhang C, Kurenkov A, Bersweiler M, Sato H, Fukami S, Ohno H 2017 Appl. Phys. Lett. 111 102402 Google Scholar
[6]	Zhou J, Ji H K, Lan T, Yan J W, Zhou W L, Miao X S. 2016 J. Electron. Mater. 44 235 Google Scholar
[7]	Chen Y Q, Liu X, Liu Y, Peng C, Fang W X, En Y F, Huang Y 2017 Appl. Phys. Lett. 111 232104 Google Scholar
[8]	Pan F, Gao S, Chen C, Song C, Zeng F 2014 Mat. Sci. Eng. R. 83 1 Google Scholar
[9]	Lanza M, Wong H S P, Pop E, et al. 2019 Adv. Electron. Mater. 5 1800143 Google Scholar
[10]	Jang J, Choi H H, Paik S H, Kim J K, Chung S, Park J H 2018 Adv. Electron. Mater. 4 1800355 Google Scholar
[11]	Duan W, Rao C, Wang X, Pei Y Mater. 2018 Res. Express 6 016413 Google Scholar
[12]	Lee M J, Lee C B, Lee D, et al. 2011 Nat. Mater. 10 625 Google Scholar
[13]	Yang J J, Pickett M D, Li X, Ohlber g D A, Stewart D R, Williams R S 2008 Nat. Nanotechnol. 3 429 Google Scholar
[14]	Ng W H, Mehonic A, Buckwell M, Montesi L, Kenyon A J 2018 IEEE Trans. Nanotechnol. 17 884 Google Scholar
[15]	Song Y, Jang J, Yoo D, Jung S H, Hong S, Lee J K, Lee T 2015 Org. Electron. 17 192 Google Scholar
[16]	Busby Y, Crespo-Monteiro N, Girleanu M, Brinkmann M, Ersen O, Pireaux J J 2015 Org. Electron. 16 40 Google Scholar
[17]	You Y, Yang K, Yuan S, Dong S, Zhang H, Huang Q, Gillin W P, Zhan Y, Zheng L 2014 Org. Electron. 15 1983 Google Scholar
[18]	Suga T, Sakata M, Aoki K, Nishide H 2014 ACS Macro Lett. 3 703 Google Scholar
[19]	Lee H S, Kang K M, Han W J, Lee T W, Park C S, Choi Y J, Park H H 2014 Appl. Mech. Mater. 597 184 Google Scholar
[20]	Nili H, Walia S, Balendhran S, Strukov D B, Bhaskaran M, Sriram S 2014 Adv. Funct. Mater. 24 6741 Google Scholar
[21]	Li S, Zeng H Z, Zhang S Y, Wei X H 2013 Appl. Phys. Lett. 102 153506 Google Scholar
[22]	Cui Y, Peng H, Wu S, Wang R, Wu T 2013 ACS Appl. Mater. Inter. 5 1213 Google Scholar
[23]	Ielmini D 2016 Semicond. Sci. Technol. 6 063002 Google Scholar
[24]	Liu X, Ji Z, Liu M, Shang L, Li D, Dai Y 2011 Chin. Sci. Bull. 56 3178 Google Scholar
[25]	Panda D, Tseng T Y 2014 Ferroelectrics 471 23 Google Scholar
[26]	Wehrenfennig C, Eperon G E, Johnston M B, Snaith H J, Herz L M 2014 Adv. Mater. 26 1584 Google Scholar
[27]	Kojima A, Teshima K, Shirai Y, Miyasaka T 2009 J. Am. Chem. Soc. 131 6050 Google Scholar
[28]	Eames C, Frost J M, Barnes P R, O'Regan B C 2015 Nat. Commun. 6 7497 Google Scholar
[29]	Leguy A M, Frost J M, McMahon A P, Sakai V G, Kochelmann W, Law C, Li X, Foglia F 2015 Nat. Commun. 6 7124 Google Scholar
[30]	Shi D, Adinolfi V, Comin R, Yuan M J, Alarousu E, Buin A, Chen Y, Hoogland S 2015 Science 347 519 Google Scholar
[31]	Green M A, Ho-Baillie A, Snaith H J 2014 Nat. Photon. 8 506 Google Scholar
[32]	Chin X Y, Perumal A, Bruno A, et al. 2018 Energ. Environ. Sci. 11 1770 Google Scholar
[33]	Kagan C R, Mitzi D B, Dimitrakopoulos C D 1999 Science 286 945 Google Scholar
[34]	Choi E S, Yang J M, Kim S G, Cuhadar C, Kim S Y, Kim S H, Lee D, Park N G 2019 Nanoscale 11 14455 Google Scholar
[35]	Kim D J, Tak Y J, Kim W G, Kim J K, Kim J H, Kim H J 2017 Adv. Mater. Interfaces 4 1601035 Google Scholar
[36]	Kim S G, Van Le Q, Han J S, et al. 2019 Adv. Funct. Mater. 29 1906686 Google Scholar
[37]	Kim S Y, Yang J M, Choi E S, Park N G 2019 Nanoscale 11 14330 Google Scholar
[38]	Zhu Y Y, Cheng P W, Shi J, Wang H J, Liu Y, Xiong R, Ma H Y, Ma HX 2019 Adv. Electron. Mater. 2 1900754 Google Scholar
[39]	Liang L, Gao P 2018 Adv. Sci. 5 1700331 Google Scholar
[40]	Choi J, Han J S, Hong K, Kim S Y, Jang H W 2018 Adv. Mater. 30 1704002 Google Scholar
[41]	Kim H, Han J S, Kim G, Kim S Y, Jang H W 2019 J. Mater. Chem. C 7 5226 Google Scholar
[42]	Xiao X Y, Hu J, Tang S, Yan K, Gao B, Chen H L, Zou C 2020 Adv. Mater. Technol. 5 1900914 Google Scholar
[43]	Jeong D N, Yang J M, Park N G 2020 Nanotechnology 31 152001 Google Scholar
[44]	Li B X, Hui W, Ran X Q, Xia D, Xia F, Chao L F, Chen Y H, Huang W 2019 J. Mater. Chem. C 7 7476 Google Scholar
[45]	Mohd Yusoff A R B, Gao P, Nazeeruddin M K 2018 Coord. Chem. Rev. 373 258 Google Scholar
[46]	Schroeder H, Balassa J J 1961 J. Chronic Dis. 14 408 Google Scholar
[47]	Stoumpos C C, Malliakas C D, Kanatzidis M G 2013 Inorg. Chem. 52 9019 Google Scholar
[48]	Wang H J, Lin J Q, Zhu Y Y, Zeng X, Wei H, Cheng P W, Lu H B, Liu Y, Xiong R 2020 Adv. Electron. Mater. 11 202000799 Google Scholar
[49]	Han J S, Le Q V, Choi J, Kim H, Kim S G, Hong K, Moon C W, Kim T L, Kim S Y, Jang H W 2019 ACS Appl. Mater. Inter. 11 8155 Google Scholar
[50]	Krishnamoorthy T, Ding H, Yan C, Leong W L, Baikie T, Zhang Z, Sherburne M, Li S, Asta M, Mathews N, Mhaisalkar S G 2015 J. Mater. Chem. A 3 23829 Google Scholar
[51]	Li M Q, Hu Y Q, Bi L Y, Zhang H L, Wang Y, Zheng Y Z 2017 Chem. Mater. 29 5463 Google Scholar
[52]	Cuhadar C, Kim S G, Yang J M, Seo J Y, Lee D, Lee D 2018 ACS Appl. Mater. Inter. 10 29741 Google Scholar
[53]	Liang G X, Chen X Y, Z H Chen, Lan H B, Zheng Z H, Fan P, Tian X Q, Duan J Y, Wei Y D, Su Z H 2019 J. Phys. Chem. C 123 27423 Google Scholar
[54]	Xiong Z, Hu W, She Y, Lin Q Q, Hu L J, Tang X S, Sun K 2019 ACS Appl. Mater. Inter. 11 30037 Google Scholar
[55]	Cheng X F, Qian W H, Wang J, Yu C, He J H, Li H, Xu Q F, Chen D Y, Li N J, Lu J M 2019 Small 15 1905731 Google Scholar
[56]	Sundar S, Chakravarty J 2010 Int. J. Environ. Res. Public Health 7 4267 Google Scholar
[57]	Ahmad K, Mobin S M 2020 ACS Omega 44 28404 Google Scholar
[58]	Yang J M, Choi E S, Kim S Y, Kim J H, Park J H, Park N G 2019 Nanoscale 11 6453 Google Scholar
[59]	Lewis J S, Laforest R, Buettner T L, et al. 2001 P. Natl. Acad. Sci. USA 3 1206 Google Scholar
[60]	Cui X P, Jiang K J, Huang J H, Zhang Q Q, Su M J, Yang L M, Song Y L, Zhou X Q 2015 Synthetic Met. 209 247 Google Scholar
[61]	Cortecchia D, Dewi H A, Yin J, et al. 2016 Inorg. Chem. 55 1044 Google Scholar
[62]	Yang P, Liu G, Liu B, Liu X, Lou Y, Chen J, Zhao Y 2018 Chem. Commun. 54 11638 Google Scholar
[63]	Jun T, Sim K, Iimura S, Sasase M, Kamioka H, Kim J, Hosono H 2018 Adv. Mater. 30 1804547 Google Scholar
[64]	Zeng F J, Guo Y Y, Hu W, et al. 2020 J. Lumin. 223 117178 Google Scholar
[65]	Zeng F J, Guo Y Y, Hu W, Tan Y Q, Zhang X M, Feng J L, Tang X S 2020 ACS Appl. Mater. Inter. 12 23094 Google Scholar
[66]	Hu Y Q, Zhang S F, Miao X L, Su L S, Bai F, Qiu T, Liu J Z, Yuan G L 2017 Adv. Mater. Interfaces 4 1700131 Google Scholar
[67]	Shi T, Yang R, Guo X 2016 Solid State Ionics 296 114 Google Scholar
[68]	Nili H, Walia S, Kandjani A E, et al. 2015 Adv. Funct. Mater. 25 3172 Google Scholar

施引文献

图 1 卤素钙钛矿分子结构式ABX₃ (A: 绿球, 代表正价金属离子或有机官能团. B: 蓝球, 代表金属阳离子. X: 红球, 代表卤素阴离子)^[45]

Fig. 1. Crystal structure of trihalide perovskite with a chemical structure of ABX₃, where A is the organic cation or metal cation (green), B is the metal cation (blue), and X is the halide anion (red)^[45].

下载: 全尺寸图片幻灯片

图 2 CsSnBr₃非铅钙钛矿材料阻变性能　(a) Pt/CsSnBr₃/Pt/PET阻变存储器结构示意图; (b)电流-电压(I-V )特性曲线; (c)耐受性^[48]

Fig. 2. Resistive switching performance of CsSnBr₃ lead-free halide perovskite: (a) Schematic of Pt/CsSnBr₃/Pt/PET resistive switching device; (b) typical current-voltage (I-V ) curve; (c) endurance performance^[48].

下载: 全尺寸图片幻灯片

图 3 CsSnI₃非铅钙钛矿材料及其阻变性能　(a) CsSnI₃晶体结构; (b)阻变存储器结构; (c)器件的截面SEM图; Ag/CsSnI₃/Pt/Ti/SiO₂/Si器件的(d) I-V特性曲线、(e)耐受性和(f)高低阻态保持特性; Au/CsSnI₃/Pt/Ti/SiO₂/Si器件的(g) I-V特性曲线、(h)耐受性和(i) 50个不同元器件高低阻态^[49]

Fig. 3. Resistive switching performance of CsSnI₃ lead-free perovskite: (a) CsSnI₃ crystal structure; (b) schematic of the Ag or Au/PMMA/CsSnI₃/Pt/SiO₂/Si vertical stack structure; (c) cross-sectional SEM image of the device; (d) the typical I-V curves, (e) endurance performance, and (f) retention characteristics of low resistances state (LRS) and high resistance state (HRS) of the Ag/PMMA/CsSnI₃/Pt devices; (g) the typical I-V curves, (h) endurance performance, and (i) HRS and LRS of 50 different cells of the Au/PMMA/CsSnI₃/Pt devices^[49].

下载: 全尺寸图片幻灯片

图 4 (a) CsGeI₃, (b) MAGeI₃和(c) FAGeI₃的表面扫描电子显微镜(SEM)图谱^[50]

Fig. 4. Scanning electron microscope (SEM) images of (a) CsGeI₃, (b) MAGeI₃, and (c) FAGeI₃ films^[50].

下载: 全尺寸图片幻灯片

图 5 铋基非铅卤素钙钛矿晶体结构　(a) Rb₃Bi₂I₉^[52]; (b) Cs₃Bi₂I₉^[52]; (c) CsBi₃I₁₀^[53]

Fig. 5. Crystal structure of Bi-based perovskite: (a) Rb₃Bi₂I₉^[52]; (b) Cs₃Bi₂I₉^[52]; (c) CsBi₃I₁₀^[53].

下载: 全尺寸图片幻灯片

图 6 铋基非铅卤素钙钛矿阻变存储器　(a) Au/A₃Bi₂I₉/Pt/Ti/SiO₂/Si器件结构示意图; (b) Rb₃Bi₂I₉阻变存储器截面SEM图; (c) Cs₃Bi₂I₉阻变存储器截面SEM图; Rb₃Bi₂I₉阻变存储器的(d) I-V特性曲线、(e)耐受性和(f)保持特性; Cs₃Bi₂I₉阻变存储器的(g) I-V特性曲线、(h)耐受性和(i)保持特性^[52]

Fig. 6. The Bi-based perovskite resistance random access memory (ReRAM) devices: (a) Schematic of Au/A₃Bi₂I₉/Pt/Ti/SiO₂/Si based ReRAM devices; (b) the cross-section SEM image of Rb₃Bi₂I₉ based ReRAM device; (c) the cross-section SEM image of Cs₃Bi₂I₉ based ReRAM device; (d) the typical I-V curve, (e) endurance, and (f) retention of Rb₃Bi₂I₉ based ReRAM; (g) the typical I-V curve, (h) endurance, and (i) retention of Cs₃Bi₂I₉ based ReRAM^[52].

下载: 全尺寸图片幻灯片

图 7 Al/CsBi₃I₁₀/ITO阻变存储器　(a)阻变存储器结构; (b)稳定性; (c)保持特性; (d)耐受性^[54]

Fig. 7. Al/CsBi₃I₁₀/ITO ReRAM device^[54]: (a) Schematic; (b) stability; (c) retention; (d) endurance.

下载: 全尺寸图片幻灯片

图 8 (a) Cs₂AgBi₂Br₆的晶体结构; (b) Au/Cs₂AgBi₂Br₆/ITO阻变存储器的截面SEM; (c)循环耐受性^[55]

Fig. 8. (a) Crystal structure of Cs₂AgBi₂Br₆; (b) the cross-section SEM image and (c) the cycle endurance characteristics of Au/Cs₂AgBi₂Br₆/ITO ReRAM^[55].

下载: 全尺寸图片幻灯片

图 9 Au/Cs₂AgBi₂Br₆/ITO 器件在不同恶劣环境下的I-V特性曲线　(a)相对湿度(RH) 10%—80%; (b)温度范围为303—453 K; (c)酒精灯外焰加热10 s; (d)在⁶⁰Co射线照射下曝露, 总剂量高达5 × 10⁵ rad(SI)^[55]

Fig. 9. I-V characteristics of Au/Cs₂AgBi₂Br₆/ITO device in different harsh environments: (a) 10%—80% relative humidity; (b) temperature range from 303 to 453 K; (c) burnt by luminous cone of alcohol lamp for 10 s; (d) exposed under ⁶⁰Co γ-ray irradiation with a total dose as high as 5 × 10⁵ rad (SI)^[55].

下载: 全尺寸图片幻灯片

图 10 (a) Ag/PMMA/MA₃Sb₂Br₉/ITO阻变存储器结构示意图; (b) MA₃Sb₂Br₉晶体结构; (c) MA₃Sb₂Br₉薄膜截面SEM图; MA₃Sb₂Br₉基阻变存储器的(d) I-V特性曲线、(e)耐久性和(f)保持时间; (g)依赖于连续脉冲的长期增强(LTP)和长期抑制(LTD)现象; (h)突触前和突触后突峰(用于模拟突峰时间依赖性可塑性(STDP)); (i) STDP行为^[58]

Fig. 10. (a) Schematic device structure of Ag/PMMA/MA₃Sb₂Br₉/ITO ReRAM; (b) crystal structure of MA₃Sb₂Br₉; (c) cross-sectional SEM image; (d) I-V characteristics, (e) endurance, and (f) retention time of MA₃Sb₂Br₉ based memristors; (g) long-term potentiation (LTP) and long-term depression (LTD) depending on consecutive pulses; (h) presynaptic and postsynaptic spikes for emulating spike timing dependent plasticity (STDP); (i) STDP behavior of an MA₃Sb₂Br₉ memristor^[58].

下载: 全尺寸图片幻灯片

图 11 (a) Cs₃Cu₂I₅非铅钙钛矿晶体结构; Cs₃Cu₂I₅阻变存储器的(b)垂直结构示意图和(c)循环测试; (d)模拟神经突触示意图; (e)线性增强和线性抑制; (f)美国国家标准技术研究院数据库(MNIST)训练数据识别精度^[65]

Fig. 11. (a) Cs₃Cu₂I₅ crystal structure; (b) vertical stack structure schematic and (c) cycle tests of the Ag/PMMA/Cs₃Cu₂I₅/ITO memristor; (d) schematic of synapses; (e) linear potentiation and depression; (f) successful recognition accuracy monitored while training the data set from Modified National Institute of Standards and Technology (MNIST)^[65].

下载: 全尺寸图片幻灯片

图 12 (a) ECM机理; (b) VCM机理; (c)导电细丝在存储介质层的形成和断裂示意图

Fig. 12. (a) ECM switching mechanism; (b) VCM switching mechanism; (c) the schematic illustration of filament formation and rupture in the switching layer.

下载: 全尺寸图片幻灯片

图 13 (a) Au/PMMA/CsSnI₃/Pt器件界面型机理示意图^[49]; (b)电场作用下, p型钙钛矿层中锡空位的积累引起的耗尽宽度变化^[49]; (c)界面型机理示意图

Fig. 13. (a) Schematic of the interface-type switching mechanism in the Au/PMMA/CsSnI₃/Pt device^[49]; (b) depletion width variation in the p-type perovskite layer according to the accumulation of Sn vacancies under an electric field^[49]; (c) the schematic illustration of interface-type switching mechanism in the switching layer

下载: 全尺寸图片幻灯片

表 1 基于非铅卤素钙钛矿的阻变存储器的阻变性能

Table 1. Resistive switching performance of resistive switching memory parameters based on lead-free halide perovskites.

器件结构	设置/重置电压/V	开/关比	耐受性/次	保持特性/s
Pt/CsSnBr₃/Pt/PET^[48]	0.2/–0.15	10⁵	50	10⁴
Ag/PMMA/CsSnI₃/Pt/Ti/SiO₂/Si^[49]	0.15/–0.3	10⁴	600	7 × 10³
Au/Cs₃Bi₂I₉/Pt/Ti/SiO₂/Si^[52]	–0.5/0.1	10⁷	400	10³
Au/Rb₃Bi₂I₉/Pt/Ti/SiO₂/Si^[52]	–0.5/0.09	10⁷	100	10³
Al/CsBi₃I₁₀/ITO^[54]	–1.7/0.9	10³	100	10⁴
Au/Cs₂AgBiBr₆/ITO^[55]	–3.4/2	10²	10³	10⁵
Au/Cs₃Bi₂I₉/ITO^[66]	–0.5/0.3	10²	10³	10⁴
Ag/PMMA/MA₃Sb₂Br₉/ITO^[58]	2.5/–0.5	10²	300	10⁴
Ag/PMMA/Cs₃Cu₂I₅/ITO^[65]	–1/0.75	10²	100	10⁴

下载: 导出CSV

[1]	Yang J J, Strukov D B, Stewart D R 2013 Nat. Nanotechnol. 8 13 Google Scholar
[2]	Choi S, Shin J H, Lee J, Sheridan P, Lu W. D 2017 Nano Lett. 17 3113 Google Scholar
[3]	Zidan M A, Strachan J P, Lu W D 2018 Nat. Electron. 1 22 Google Scholar
[4]	Mao D, Mejia I, Salas-Villasenor A L, Singh M, Stiegler H, Gnade B E, Quevedo-Lopez M A 2013 Org. Electron. 14 505 Google Scholar
[5]	Jinnai B, Zhang C, Kurenkov A, Bersweiler M, Sato H, Fukami S, Ohno H 2017 Appl. Phys. Lett. 111 102402 Google Scholar
[6]	Zhou J, Ji H K, Lan T, Yan J W, Zhou W L, Miao X S. 2016 J. Electron. Mater. 44 235 Google Scholar
[7]	Chen Y Q, Liu X, Liu Y, Peng C, Fang W X, En Y F, Huang Y 2017 Appl. Phys. Lett. 111 232104 Google Scholar
[8]	Pan F, Gao S, Chen C, Song C, Zeng F 2014 Mat. Sci. Eng. R. 83 1 Google Scholar
[9]	Lanza M, Wong H S P, Pop E, et al. 2019 Adv. Electron. Mater. 5 1800143 Google Scholar
[10]	Jang J, Choi H H, Paik S H, Kim J K, Chung S, Park J H 2018 Adv. Electron. Mater. 4 1800355 Google Scholar
[11]	Duan W, Rao C, Wang X, Pei Y Mater. 2018 Res. Express 6 016413 Google Scholar
[12]	Lee M J, Lee C B, Lee D, et al. 2011 Nat. Mater. 10 625 Google Scholar
[13]	Yang J J, Pickett M D, Li X, Ohlber g D A, Stewart D R, Williams R S 2008 Nat. Nanotechnol. 3 429 Google Scholar
[14]	Ng W H, Mehonic A, Buckwell M, Montesi L, Kenyon A J 2018 IEEE Trans. Nanotechnol. 17 884 Google Scholar
[15]	Song Y, Jang J, Yoo D, Jung S H, Hong S, Lee J K, Lee T 2015 Org. Electron. 17 192 Google Scholar
[16]	Busby Y, Crespo-Monteiro N, Girleanu M, Brinkmann M, Ersen O, Pireaux J J 2015 Org. Electron. 16 40 Google Scholar
[17]	You Y, Yang K, Yuan S, Dong S, Zhang H, Huang Q, Gillin W P, Zhan Y, Zheng L 2014 Org. Electron. 15 1983 Google Scholar
[18]	Suga T, Sakata M, Aoki K, Nishide H 2014 ACS Macro Lett. 3 703 Google Scholar
[19]	Lee H S, Kang K M, Han W J, Lee T W, Park C S, Choi Y J, Park H H 2014 Appl. Mech. Mater. 597 184 Google Scholar
[20]	Nili H, Walia S, Balendhran S, Strukov D B, Bhaskaran M, Sriram S 2014 Adv. Funct. Mater. 24 6741 Google Scholar
[21]	Li S, Zeng H Z, Zhang S Y, Wei X H 2013 Appl. Phys. Lett. 102 153506 Google Scholar
[22]	Cui Y, Peng H, Wu S, Wang R, Wu T 2013 ACS Appl. Mater. Inter. 5 1213 Google Scholar
[23]	Ielmini D 2016 Semicond. Sci. Technol. 6 063002 Google Scholar
[24]	Liu X, Ji Z, Liu M, Shang L, Li D, Dai Y 2011 Chin. Sci. Bull. 56 3178 Google Scholar
[25]	Panda D, Tseng T Y 2014 Ferroelectrics 471 23 Google Scholar
[26]	Wehrenfennig C, Eperon G E, Johnston M B, Snaith H J, Herz L M 2014 Adv. Mater. 26 1584 Google Scholar
[27]	Kojima A, Teshima K, Shirai Y, Miyasaka T 2009 J. Am. Chem. Soc. 131 6050 Google Scholar
[28]	Eames C, Frost J M, Barnes P R, O'Regan B C 2015 Nat. Commun. 6 7497 Google Scholar
[29]	Leguy A M, Frost J M, McMahon A P, Sakai V G, Kochelmann W, Law C, Li X, Foglia F 2015 Nat. Commun. 6 7124 Google Scholar
[30]	Shi D, Adinolfi V, Comin R, Yuan M J, Alarousu E, Buin A, Chen Y, Hoogland S 2015 Science 347 519 Google Scholar
[31]	Green M A, Ho-Baillie A, Snaith H J 2014 Nat. Photon. 8 506 Google Scholar
[32]	Chin X Y, Perumal A, Bruno A, et al. 2018 Energ. Environ. Sci. 11 1770 Google Scholar
[33]	Kagan C R, Mitzi D B, Dimitrakopoulos C D 1999 Science 286 945 Google Scholar
[34]	Choi E S, Yang J M, Kim S G, Cuhadar C, Kim S Y, Kim S H, Lee D, Park N G 2019 Nanoscale 11 14455 Google Scholar
[35]	Kim D J, Tak Y J, Kim W G, Kim J K, Kim J H, Kim H J 2017 Adv. Mater. Interfaces 4 1601035 Google Scholar
[36]	Kim S G, Van Le Q, Han J S, et al. 2019 Adv. Funct. Mater. 29 1906686 Google Scholar
[37]	Kim S Y, Yang J M, Choi E S, Park N G 2019 Nanoscale 11 14330 Google Scholar
[38]	Zhu Y Y, Cheng P W, Shi J, Wang H J, Liu Y, Xiong R, Ma H Y, Ma HX 2019 Adv. Electron. Mater. 2 1900754 Google Scholar
[39]	Liang L, Gao P 2018 Adv. Sci. 5 1700331 Google Scholar
[40]	Choi J, Han J S, Hong K, Kim S Y, Jang H W 2018 Adv. Mater. 30 1704002 Google Scholar
[41]	Kim H, Han J S, Kim G, Kim S Y, Jang H W 2019 J. Mater. Chem. C 7 5226 Google Scholar
[42]	Xiao X Y, Hu J, Tang S, Yan K, Gao B, Chen H L, Zou C 2020 Adv. Mater. Technol. 5 1900914 Google Scholar
[43]	Jeong D N, Yang J M, Park N G 2020 Nanotechnology 31 152001 Google Scholar
[44]	Li B X, Hui W, Ran X Q, Xia D, Xia F, Chao L F, Chen Y H, Huang W 2019 J. Mater. Chem. C 7 7476 Google Scholar
[45]	Mohd Yusoff A R B, Gao P, Nazeeruddin M K 2018 Coord. Chem. Rev. 373 258 Google Scholar
[46]	Schroeder H, Balassa J J 1961 J. Chronic Dis. 14 408 Google Scholar
[47]	Stoumpos C C, Malliakas C D, Kanatzidis M G 2013 Inorg. Chem. 52 9019 Google Scholar
[48]	Wang H J, Lin J Q, Zhu Y Y, Zeng X, Wei H, Cheng P W, Lu H B, Liu Y, Xiong R 2020 Adv. Electron. Mater. 11 202000799 Google Scholar
[49]	Han J S, Le Q V, Choi J, Kim H, Kim S G, Hong K, Moon C W, Kim T L, Kim S Y, Jang H W 2019 ACS Appl. Mater. Inter. 11 8155 Google Scholar
[50]	Krishnamoorthy T, Ding H, Yan C, Leong W L, Baikie T, Zhang Z, Sherburne M, Li S, Asta M, Mathews N, Mhaisalkar S G 2015 J. Mater. Chem. A 3 23829 Google Scholar
[51]	Li M Q, Hu Y Q, Bi L Y, Zhang H L, Wang Y, Zheng Y Z 2017 Chem. Mater. 29 5463 Google Scholar
[52]	Cuhadar C, Kim S G, Yang J M, Seo J Y, Lee D, Lee D 2018 ACS Appl. Mater. Inter. 10 29741 Google Scholar
[53]	Liang G X, Chen X Y, Z H Chen, Lan H B, Zheng Z H, Fan P, Tian X Q, Duan J Y, Wei Y D, Su Z H 2019 J. Phys. Chem. C 123 27423 Google Scholar
[54]	Xiong Z, Hu W, She Y, Lin Q Q, Hu L J, Tang X S, Sun K 2019 ACS Appl. Mater. Inter. 11 30037 Google Scholar
[55]	Cheng X F, Qian W H, Wang J, Yu C, He J H, Li H, Xu Q F, Chen D Y, Li N J, Lu J M 2019 Small 15 1905731 Google Scholar
[56]	Sundar S, Chakravarty J 2010 Int. J. Environ. Res. Public Health 7 4267 Google Scholar
[57]	Ahmad K, Mobin S M 2020 ACS Omega 44 28404 Google Scholar
[58]	Yang J M, Choi E S, Kim S Y, Kim J H, Park J H, Park N G 2019 Nanoscale 11 6453 Google Scholar
[59]	Lewis J S, Laforest R, Buettner T L, et al. 2001 P. Natl. Acad. Sci. USA 3 1206 Google Scholar
[60]	Cui X P, Jiang K J, Huang J H, Zhang Q Q, Su M J, Yang L M, Song Y L, Zhou X Q 2015 Synthetic Met. 209 247 Google Scholar
[61]	Cortecchia D, Dewi H A, Yin J, et al. 2016 Inorg. Chem. 55 1044 Google Scholar
[62]	Yang P, Liu G, Liu B, Liu X, Lou Y, Chen J, Zhao Y 2018 Chem. Commun. 54 11638 Google Scholar
[63]	Jun T, Sim K, Iimura S, Sasase M, Kamioka H, Kim J, Hosono H 2018 Adv. Mater. 30 1804547 Google Scholar
[64]	Zeng F J, Guo Y Y, Hu W, et al. 2020 J. Lumin. 223 117178 Google Scholar
[65]	Zeng F J, Guo Y Y, Hu W, Tan Y Q, Zhang X M, Feng J L, Tang X S 2020 ACS Appl. Mater. Inter. 12 23094 Google Scholar
[66]	Hu Y Q, Zhang S F, Miao X L, Su L S, Bai F, Qiu T, Liu J Z, Yuan G L 2017 Adv. Mater. Interfaces 4 1700131 Google Scholar
[67]	Shi T, Yang R, Guo X 2016 Solid State Ionics 296 114 Google Scholar
[68]	Nili H, Walia S, Kandjani A E, et al. 2015 Adv. Funct. Mater. 25 3172 Google Scholar

[1]	柯庆, 代月花. 电化学金属化阻性存储器导电细丝生长中的离子动力学研究. 物理学报, 2023, 72(24): 248501. doi: 10.7498/aps.72.20231232
[2]	陈开辉, 樊贞, 董帅, 李文杰, 陈奕宏, 田国, 陈德杨, 秦明辉, 曾敏, 陆旭兵, 周国富, 高兴森, 刘俊明. 钙钛矿相界面插层对SrFeO_x基忆阻器的性能提升. 物理学报, 2023, 72(9): 097301. doi: 10.7498/aps.72.20221934
[3]	李伟, 朱慧文, 孙彤, 屈文山, 李建刚, 杨辉, 高志翔, 施薇, 魏斌, 王华. 基于1, 2 - 二氰基苯/聚合物复合材料的高耐久性有机阻变存储器. 物理学报, 2023, 72(4): 048501. doi: 10.7498/aps.72.20221507
[4]	王英, 黄慧香, 黄香林, 郭婷婷. 光电协同调控下HfO_x基阻变存储器的阻变特性. 物理学报, 2023, 72(19): 197201. doi: 10.7498/aps.72.20230797
[5]	江碧怡, 周菲迟, 柴扬. 神经形态阻变器件在图像处理中的应用. 物理学报, 2022, 71(14): 148504. doi: 10.7498/aps.71.20220463
[6]	周正, 黄鹏, 康晋锋. 基于非挥发存储器的存内计算技术. 物理学报, 2022, 71(14): 148507. doi: 10.7498/aps.71.20220397
[7]	朱茂聪, 邵雅洁, 周静, 陈文, 王志青, 田晶. 铌掺杂锆钛酸铅铁电薄膜调控CuInS₂量子点的阻变性能. 物理学报, 2022, 71(20): 207301. doi: 10.7498/aps.71.20220911
[8]	邓文, 汪礼胜, 刘嘉宁, 余雪玲, 陈凤翔. 光电协控多层MoS₂记忆晶体管的阻变行为与机理研究. 物理学报, 2021, 70(21): 217302. doi: 10.7498/aps.70.20210750
[9]	龚少康, 周静, 王志青, 朱茂聪, 沈杰, 吴智, 陈文. 尺寸调控SnO₂量子点的阻变性能及调控机理. 物理学报, 2021, 70(19): 197301. doi: 10.7498/aps.70.20210608
[10]	李广辉, 夏婉莹, 孙献文. La施主掺杂SrTiO3单晶的阻变性能研究. 物理学报, 2018, 67(18): 187303. doi: 10.7498/aps.67.20180904
[11]	郭家俊, 董静雨, 康鑫, 陈伟, 赵旭. 过渡金属元素X(X=Mn,Fe,Co,Ni)掺杂对ZnO基阻变存储器性能的影响. 物理学报, 2018, 67(6): 063101. doi: 10.7498/aps.67.20172459
[12]	张志超, 王芳, 吴仕剑, 李毅, 弭伟, 赵金石, 张楷亮. 氧分压对Ni/HfOx/TiN阻变存储单元阻变特性的影响. 物理学报, 2018, 67(5): 057301. doi: 10.7498/aps.67.20172194
[13]	代月花, 潘志勇, 陈真, 王菲菲, 李宁, 金波, 李晓风. 基于HfO2的阻变存储器中Ag导电细丝方向和浓度的第一性原理研究. 物理学报, 2016, 65(7): 073101. doi: 10.7498/aps.65.073101
[14]	蒋然, 杜翔浩, 韩祖银, 孙维登. Ti/HfO2/Pt阻变存储单元中的氧空位聚簇分布. 物理学报, 2015, 64(20): 207302. doi: 10.7498/aps.64.207302
[15]	庞华, 邓宁. Ni/HfO2/Pt阻变单元特性与机理的研究. 物理学报, 2014, 63(14): 147301. doi: 10.7498/aps.63.147301
[16]	刘东青, 程海峰, 朱玄, 王楠楠, 张朝阳. 忆阻器及其阻变机理研究进展. 物理学报, 2014, 63(18): 187301. doi: 10.7498/aps.63.187301
[17]	陈然, 周立伟, 王建云, 陈长军, 邵兴隆, 蒋浩, 张楷亮, 吕联荣, 赵金石. 基于Cu/SiOx/Al结构的阻变存储器多值特性及机理的研究. 物理学报, 2014, 63(6): 067202. doi: 10.7498/aps.63.067202
[18]	容佳玲, 陈赟汉, 周洁, 张雪, 王立, 曹进. 基于ITO/聚甲基丙烯酸甲酯/Al的有机阻变存储器SPICE仿真. 物理学报, 2013, 62(22): 228502. doi: 10.7498/aps.62.228502
[19]	杨金, 周茂秀, 徐太龙, 代月花, 汪家余, 罗京, 许会芳, 蒋先伟, 陈军宁. 阻变存储器复合材料界面及电极性质研究. 物理学报, 2013, 62(24): 248501. doi: 10.7498/aps.62.248501
[20]	吴振宇, 董嗣万, 刘毅, 柴常春, 杨银堂. 铜互连电迁移失效阻变特性研究. 物理学报, 2012, 61(24): 248501. doi: 10.7498/aps.61.248501

计量

文章访问数: 7149
PDF下载量: 281
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板