大面积单层二硫化钼的制备及其光电性能

武鹏; 谈论; 李炜; 曹立伟; 赵俊博; 曲尧; 李昂

doi:10.7498/aps.72.20230273

摘要

过渡金属硫族化合物(TMDCs)材料具有优异的电学和光电性能, 在下一代光电子器件中具有广阔的应用前景. 然而, 大面积均匀生长单层的TMDCs仍然具有相当大的挑战. 本工作提出了一种简单而有效的利用化学气相沉积(CVD)制备大面积单层二硫化钼(MoS₂)的方法, 并通过调整氧化物前驱体的比例, 调整MoS₂单晶/薄膜生长. 随后, 利用叉指电极掩膜板制备出单层MoS₂薄膜光电探测器. 最后, 在405 nm激光激发下, 不同电压和不同激光功率条件下均表现出高稳定和可重复的光电响应, 响应时间可达毫秒(ms)量级. 此外, 该光电探测器实现了405—830 nm的可见光到近红外的宽光谱检测范围, 光响应度(R)高达291.7 mA/W, 光探测率(D^* )最高达1.629 × 10⁹ Jones. 基于该CVD制备的单层MoS₂薄膜光电探测器具有成本低、能大规模制备, 且在可见光到近红外的宽光谱范围内具有良好的稳定性和重复性的优点, 为未来电子和光电子器件的应用提供了更多的可能性.

关键词:

Abstract

Transition metal dichalcogenide (TMDC) monolayers exhibit enhanced electrical and optoelectrical properties, which are promising for next-generation optoelectronic devices. However, large-scale and uniform growth of TMDC monolayers with large grain size is still a considerable challenge. Presented in this work is a simple and effective approach to fabricating largescale molybdenum (MoS₂) disulfide monolayers by chemical vapor deposition (CVD) method. It is found that MoS₂ grows from single crystal into thin film with the increase of oxide precursor proportion. The photodetector of large scale monolayer layer MoS₂ film is fabricated by depositing metal electrodes on the interdigital electrode mask through using thermal evaporation coating. Finally, the highly stable and repeatable photoelectric responses under the conditions of different voltages and different laser power are characterized under 405-nm laser excitation, with response time decreasing down to the order of milliseconds (ms). In addition, the photodetector achieves a wide spectral detection range from 405 nm to 830 nm, that is, from visible light to near-infrared light wavelength range, with optical response (R) of 291.7 mA/W and optical detection rate (D^*) of 1.629×10⁹ Jones. The monolayer MoS₂ thin film photodetector demonstrated here has the advantages of low cost, feasibility of large-scale preparation, and good stability and repeatability in the wide spectrum range from visible light to near infrared light wavelength, providing the possibilities for future applications of electronic and optoelectronic devices .

Keywords:

作者及机构信息

1.
北京工业大学材料与制造学部, 先进材料微观结构与性能北京市重点实验室, 北京　100124

2.
湖北大学物理与电子科学学院, 湖北省氢能安全检测与控制工程技术研究中心, 武汉　430062

通信作者: 李昂, ang.li@bjut.edu.cn

基金项目: 北京卓越科学家项目 (批准号: BJJWZYJH01201910005018)和国家重点研发计划(批准号: 2021YFA1200201)资助的课题.

Authors and contacts

1.
Beijing Key Lab of Microstructure and Properties of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China

2.
Hubei Engineering Research Center for Safety Detection and Control of Hydrogen Energy, School of Physics and Electronic Sciences, Hubei University, Wuhan 430062, China

Corresponding author: Li Ang, ang.li@bjut.edu.cn

Funds: Project supported by the Beijing Outstanding Young Scientists Projects, China (Grant No. BJJWZYJH01201910005018) and the National Key Research and Development Program, China (Grant No. 2021YFA1200201).

文章全文 : translate this paragraph

参考文献

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施引文献

图 1 (a) CVD生长单层MoS₂薄膜实验装置示意图; (b)化学反应区放大图; (c) CVD生长过程温度曲线

Fig. 1. (a) CVD experimental equipment for MoS₂ synthesis; (b) enlarged view of the chemical reaction zone; (c) temperature curve of CVD growth process.

下载: 全尺寸图片幻灯片

图 2 (a)—(d)不同MoO₃前驱体量下制备的MoS₂的SEM形貌; (e) MoS₂覆盖率随前驱体量的变化曲线; (f) MoS₂的AFM照片(插图)和图中黑线高度随位置的变化曲线

Fig. 2. (a)–(d) SEM morphologies of MoS₂ prepared under different volumes of MoO₃ precursor; (e) curve of MoS₂ coverage with precursor volume; (f) the height of MoS₂ as a function of position marked as black line in the inset, inset is AFM photograph of MoS₂.

下载: 全尺寸图片幻灯片

图 3 (a) MoS₂单晶光学显微镜图像; (b)单晶MoS₂的拉曼成像; (c) Si/SiO₂基底拉曼成像; (d)对应图(a)中各点的拉曼光谱; (e) MoS₂薄膜的光学显微镜图像; (f) MoS₂薄膜的拉曼成像; (g) Si/SiO₂基底拉曼成像; (h)图(e)各点对应的拉曼光谱

Fig. 3. (a) Optical microscope image of single crystal MoS₂; (b) Raman mapping of single crystal MoS₂; (c) Raman mapping of Si/SiO₂ substrate; (d) Raman spectra of each point in Fig. (a); (e) optical microscope image of thin film MoS₂; (f) Raman mapping of thin film MoS₂; (g) Raman mapping of Si/SiO₂ substrate; (h) Raman spectra of each point in Fig. (e).

下载: 全尺寸图片幻灯片

图 4 (a)叉指电极装置示意图; (b) Au和Ti/Au电极上的电流和电压曲线, 插图是MoS₂叉指器件实物图

Fig. 4. (a) Schematic diagram of interdigital device; (b) the current and voltage curve with Au and Ti/Au electrodes, the inset shows the image of the MoS₂ interdigital device.

下载: 全尺寸图片幻灯片

图 5 不同电压(a)和光功率(b)条件的电流随时间变化关系; 光电探测器件的响应度和探测率随波长(c)和光功率(d)的变化关系; 器件的响应上升时间(e)和下降恢复时间(f)

Fig. 5. The relation of current with time under different voltage conditions (a) and different optical power conditions (b); the relationship between the responsivity and the detection rate of the photodetector with wavelength (c) and with optical power (d); the rise time (e) and the recovery time (f) of the photodetector.

下载: 全尺寸图片幻灯片

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[2]	Li X F, Yang L M, Si M W, Li S C, Huang M Q, Ye P D, Wu Y Q 2015 Adv. Mater. 27 1547 Google Scholar
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[4]	Kaushik V, Ahmad M, Agarwal K, Varandani D, Belle B D, Das P, Mehta B R 2020 J. Phys. Chem. C 124 23368 Google Scholar
[5]	Bagot P A J, Silk O B W, Douglas J O, Pedrazzini S, Crudden D J, Martin T L, Hardy M C, Moody M P, Reed R C 2017 Acta Mater. 125 156 Google Scholar
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[36]	Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A 2013 Nat. Nanotechnol. 8 497 Google Scholar
[37]	Zhang W, Huang J K, Chen C H, Chang Y H, Cheng Y J, Li L J 2013 Adv. Mater. 25 3456 Google Scholar
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[39]	Nie C B, Yu L Y, Wei X Z, Shen J, Lu W Q, Chen W M, Feng S L, Shi H F 2017 Nanotechnology 28 275203 Google Scholar
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[41]	Pak Y, Park W, Mitra S, Sasikala Devi A A, Loganathan K, Kumaresan Y, Kim Y, Cho B, Jung G Y, Hussain M M, Roqan I S 2018 Small 14 201703176
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[49]	Sinha S, Kumar S, Arora SK, Sharma A, Tomar M, Wu H C, Gupta V 2021 J. Appl. Phys. 129 155304 Google Scholar

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大面积单层二硫化钼的制备及其光电性能