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偏振探测是获取光矢量信息的重要手段, 广泛应用于光通信、智能感知与生物传感等领域. 二维范德瓦耳斯材料因其独特的各向异性与可调电学特性, 为实现高性能偏振探测提供了新的材料平台, 但这类材料存在本征吸收弱、响应效率有限等局限性. 等离激元结构可在微纳尺度实现强局域光场调控, 是突破上述局限性、提升探测性能的重要手段. 本文系统梳理了等离激元微纳结构与范德瓦耳斯材料的光学耦合机制, 分析了不同类型等离激元结构在各类偏振光探测中的作用与优势. 最后, 讨论了该方向在偏振敏感光通信、片上光计算与信息处理、仿真视觉与图像识别等前沿领域的应用前景, 展望了未来研究面临的机遇与挑战.
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关键词:
- 偏振探测 /
- 等离激元 /
- 范德瓦耳斯材料 /
- 表面等离激元极化 /
- 局域表面等离激元共振
Polarization detection is a fundamental way to obtain the vectorial nature of light, supporting advanced technologies in the fields of optical communication, intelligent sensing, and biosensing. Two-dimensional van der Waals materials have become a promising platform for high-performance polarization-sensitive photodetectors due to their inherent anisotropy and tunable electronic properties. Nevertheless, their intrinsically weak light absorption and limited photoresponse efficiency remain major bottlenecks. Plasmonic nanostructures, which can achieve strong localized field confinement and manipulation on a nanoscale, provide an effective strategy to overcome these limitations and substantially improve device performance. In this review, we systematically summarize the coupling mechanisms between plasmonic architectures and vdW materials, highlighting near-field enhancement, plasmon-induced hot-carrier generation, and mode-selective polarization coupling as key physical processes for enhancing photocarrier generation and polarization extinction. Representative devices including metallic gratings, hybrid nanoantennas, and chiral metasurfaces are compared in terms of responsivity, detection speed, operating bandwidth, and polarization extinction ratio, revealing consistent improvements of one to two orders of magnitude over bare vdW devices. We further survey emerging applications in the fields of high-speed polarization-encoded optical communication, on-chip optical computing and information processing, and bioinspired vision and image recognition systems, where plasmonic-vdW hybrid detectors demonstrate unique advantages in miniaturization and energy efficiency. Finally, we discuss current challenges such as large-scale fabrication of uniform plasmonic arrays, spectral bandwidth broadening, and seamless integration with complementary photonic circuits, and outline future opportunities for next-generation polarization-resolved optoelectronic platforms.-
Keywords:
- polarization detection /
- plasmonics /
- van der Waals materials /
- surface plasmon polariton /
- localized surface plasmon resonance
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图 1 本文主要内容示意, 共分为二维材料、等离激元结构、等离激元的增强机制以及应用4个部分
Fig. 1. Schematic illustration of the main content of the article, divided into four parts: two-dimensional materials, plasmonic structures, enhancement mechanisms of plasmons, and applications.
图 2 (a) SPPs在两种介质界面处的物理模型示意图[22]; (b) SPPs在金属与空气(灰色曲线)及二氧化硅(黑色曲线)界面处的色散关系[23]; (c) 纳米粒子中LSPRs的物理模型示意图[19]; (d) LSPR中亚波长金属纳米粒子的相位相对于驱动场频率的分布[23]; (e) 在半径为R的球形散射体内部区域, 产生电磁辐射并形成各米氏散射的特近场分布[34]; (f) 基于Mie散射下的金纳米球等离激元共振线宽[23]
Fig. 2. (a) Schematic diagram of the physical model of SPPs at the interface between two media[22]; (b) dispersion relationship of SPPs at the interface between metal and air (gray curve) and silicon dioxide (black curve)[23]; (c) schematic diagram of the physical model of LSPRs in nanoparticles[19]; (d) phase distribution of subwavelength metal nanoparticles in LSPRs relative to the driving field frequency[23]; (e) near-field distribution within the spherical scattering body of radius R that generates electromagnetic radiation and forms Mie scattering[34]; (f) plasmon resonance linewidth of gold nanoparticles based on Mie scattering[23].
图 3 不同形状纳米颗粒的FDTD电场分布模拟仿真 (a)直径为30, 50, 80和100 nm纳米球的电场分布[45]; (b)核壳结构的电场分布[46]; (c)微米ITO纳米棒天线与微米ITO二聚体天线的电场分布[47]; (d)三角粒子光谱中分别以1.75, 2.70和3.20 eV为中心的电场分布[48]
Fig. 3. FDTD electric field distribution simulation of nanoparticles with different shapes: (a) Electric field distribution of spheres with diameters of 30, 50, 80, and 100 nanometers[45]; (b) electric field distribution of core-shell structure[46]; (c) electric field diagrams of micro-ITO nanorods and micro-ITO dimers antennas[47]; (d) electric field distribution centered at 1.75, 2.70, and 3.20 eV in the triangular particle spectrum[48].
图 4 (a) 器件结构示意图[49]; (b) Au@MoS2异质结构中可能的光生载流子生成路径[49]; (c) Au@MoS2光电晶体管上光电流和响应度随入射功率的变化, 以及多层MoS2光电晶体管上光电流和响应度随入射功率的变化[49]; (d) 基于WS2纳米盘/石墨烯范德瓦耳斯异质结构的光电探测器示意图以及WS2纳米盘/石墨烯光电探测器的放大视图, 图中展示了在范德瓦耳斯界面处的电荷转移过程[50]; (e) WS2纳米盘/石墨烯光电探测器(红色)和WS2连续膜/石墨烯光电探测器(黑色)的光谱光响应性[50]; (f) 热电子的生成和转移过程[54]; (g) WSe2/ReS2异质结构的示意图[59]; (h) 水平与垂直偏振下的光学共振现象及其对电子-空穴生成的贡献[59]
Fig. 4. (a) Device structure schematic diagram[49]; (b) the possible photocarrier generation paths in the Au@MoS2 heterostructure[49]; (c) the variation of photocurrent and responsivity on the Au@MoS2 phototransistor with incident power, as well as the variation of photocurrent and responsivity on the multilayer MoS2 phototransistor with incident power[49]; (d) schematic diagram of a WS2 nanodisk/graphene van der Waals heterostructure photodetector and an enlarged view of the WS2 nanodisk/graphene photodetector, showing the charge transfer process at the van der Waals interface[50]; (e) spectral light responsivity of the WS2 nanodisk/graphene photodetector (red) and the WS2 continuous film/graphene photodetector (black)[50]; (f) generation and transfer process of hot electrons[54]; (g) schematic diagram of the heterostructure WSe2/ReS2[59]; (h) optical resonance phenomenon under horizontal and vertical polarization and its contribution to electron-hole generation[59].
图 5 (a) BP光子器件的结构示意图[63]; (b) 1L-MoS2-NCOM示意图[64]; (c) 两种设计的BP等离子体结构[65]; (d) 两种不同偏振(扶手椅型和之字形)下的吸收谱[65]; (e) LSPR和SLR模式在整个单元格中的电场强度|E|2的模拟大小[66]; (f) 基于金属天线改进的远场定向辐射计算方案示意图, 黄色为GNR材料, 蓝色为二硫化钼单层膜[69]
Fig. 5. (a) Schematic structure of BP photonic device[63]; (b) schematic diagram of 1L-MoS2-NCOM[64]; (c) two designs of BP plasma structures[65]; (d) absorption spectra under two different polarizations (armchair and zigzag)[65]; (e) simulated size of electric field strength |E|2 in LSPR and SLR modes throughout the entire cell[66]; (f) schematic diagram of far-field directional radiation calculation scheme based on antenna improvement, yellow represents GNR material, blue represents monolayer MoS2 film[69].
图 6 (a) 平面波入射下混合光栅-石墨烯结构示意图[71]; (b) 纯银光栅、独立石墨烯及覆盖石墨烯的光栅(r = b)的法向吸收光谱对比[71]; (c) 全线性偏振光探测器示意图[72]; (d) 旋转变焦透镜接触的近场分布, 在0°和60°偏振光照射下, 具有光栅结构的接触点的电场分布, 以及没有光栅结构的接触点的电场分布[72]; (e) 通过片上SPP介导的MoTe2基光电探测器[73]; (f) 归一化光电流作为入射偏振方向的函数, 橙色方块表示光栅上的入射, 蓝色圆圈表示MoTe2上的入射[73]; (g) 制备流程示意图[61]; (h) 石墨烯-Au纳米光栅在TE偏振和TM偏振光照射下的模拟吸收光谱[61]; (i) 在1327纳米的波长下, 未偏振光在Au NGs和Gra-Au NGs上的电场分布[61]; (j) 器件光电流对偏振角的依赖性[61]
Fig. 6. (a) Schematic diagram of mixed grating-graphene structure under plane wave incidence[71]; (b) comparison of normal absorption spectra for pure silver gratings, independent graphene, and gratings covered with graphene (r = b)[71]; (c) schematic diagram of the fully linear polarization light detector[72]; (d) near-field distribution when the focal plane lens is in contact. The electric field distribution at the contact point with and without grating structure under illumination of 0°and 60°polarized light[72]; (e) MoTe2-based photodetector mediated by on-chip SPP[73]; (f) Normalized photocurrent as a function of the incident polarization direction, the orange squares represent the incidence on the grating, and the blue circles represent the incidence on MoTe2[73]; (g) schematic diagram of the preparation process[61]; (h) simulated absorption spectra of Graphene-Au nanogratings under TE and TM polarization light illumination[61]; (i) electric field distribution of unpolarized light on Au NGs and Gra-Au NGs at a wavelength of 1327 nanometers[61]; (j) dependence of the device photocurrent on the polarization angle[61].
图 7 (a) 宽带CPL光电探测器的器件结构[76]; (b) 线偏振光和CPL照射下等离子体超表面接触的电场分布[76]; (c) LCP和RCP照射下的光电流方向[76]; (d) 计算得到的波长依赖CPL探测率值, 插图为分别在LCP和RCP光照射下测得的波长扫描光电流[76]; (e) 不同波长的入射光下实验测量的1/4波片角度依赖零偏置光电流[76]; (f) 纳米天线介导半金属光电探测器示意图[77]; (g) 通过坐标变换计算取向角为θ的锥形纳米天线光响应的示意图[77]; (h) 圆偏振光CPL的模拟光响应[77]; (i) 在有限垂直磁场B下, 具有不同手性等离子体场的WSe2中量子电子的腔依赖性偏振光子输出示意图[78]; (j) 等离子体晶格的扫描电子显微镜图像[78]
Fig. 7. (a) Device structure of a broadband CPL photodetector[76]; (b) electric field distribution of the plasma super surface under illumination with linearly polarized light and CPL[76]; (c) light current direction under LCP and RCP irradiation[76]; (d) calculated wavelength-dependent CPL detection rate values, the In2Se3 shows the wavelength-scanned photocurrent measured under LCP and RCP light illumination[76]; (e) experimental measurement of quarter waveplate angle-dependent zero bias photocurrent for different wavelengths of incident light[76]; (f) schematic diagram of a nanoscale antenna-mediated semimetal photodetector[77]; (g) schematic diagram for calculating the cone-shaped nanoscale antenna's light response at an orientation angle of θ[77]; (h) simulated light response of CPL[77]; (i) schematic diagram showing the cavity-dependent polarization photon output of quantum electrons in WSe2 with different chiral plasma fields under a finite vertical magnetic field B[78]; (j)scanning electron microscope image of the plasma lattice[78].
图 8 (a) 偏振信息编码与解码系统示意图[72]; (b) 输入灰度信号、检测到的光电流(IDS, 1和IDS, 2)与偏振角之间对应关系的时间依赖性解码过程[72]; (c) IDS, 1和IDS, 2的实测光电流结果[72]; (d) 图案上重建的偏振角信息: “爱”字形为0°线性偏振; “H”字形为75°线性偏振; “N”字形为90°线性偏振; “U”字形为120°线性偏振[72]; (e) MoSe2等离子体杂化集成非线性路由器的功能示意图[81]; (f) 两种电路的二次谐波光子计数随输入激光功率变化的对数-对数曲线[81]; (g) 基于BP光电探测器的光加密通信原理示意图[82]; (h) BP光电探测器对接收信号的响应特性[82]
Fig. 8. (a) Schematic diagram of polarization information encoding and decoding system[72]; (b) time-dependent decoding process of the correspondence between input grayscale signal, detected photocurrent (IDS, 1 and IDS, 2) , and polarization angle[72]; (c) measured photocurrent results of IDS, 1 and IDS, 2[72]; (d) reconstructed polarization angle information on the pattern: ‘Love’ shape is 0°linear polarization; ‘H’ shape is 75°linear polarization; ‘N’ shape is 90°linear polarization; ‘U’ shape is 120°linear polarization[72]; (e) functional schematic diagram of a MoSe2 plasma hybrid integrated nonlinear router[81]; (f) log-log curve of second harmonic photon counting for two circuits with respect to input laser power[81]; (g) schematic diagram of the principle of light encryption communication based on BP photodetector[82]; (h) response characteristics of BP photodetector to received signal[82].
图 9 (a)—(c) 逻辑与、或及XNOR运算系统示意图, 包含混合光电信号输入, 以及逻辑与、或及XNOR运算的符号化示意图与真值表[88]; (d) 加密/解密光通信系统设计示意图[88]; (e) 加密图像传输演示[88]; (f) 偏振信息编码与解码的实验装置[76]; (g) 随时间变化的解码图像[76]
Fig. 9. (a)–(c) Schematic diagrams of logical AND, OR, and XNOR operation systems, including mixed photoelectric signal inputs, as well as symbolic schematic diagrams and truth tables for logical AND, OR, and XNOR operations[88]; (d) schematic diagram of an encrypted/decrypted optical communication system design[88]; (e) demonstration of encrypted image transmission[88]; (f) experimental device for encoding and decoding polarization information[76]; (g) decoded images over time[76].
图 10 (a)MoS2-银纳米光栅阵列的光电晶体管神经网络架构示意图 [93]; (b)图像的预处理过程[93]; (c)入射波长1064 nm时零偏压下偏振光响应率的极化图谱[93]; (d)石墨烯上的双臂超表面结构实现圆偏振光、左旋圆偏振光和右旋圆偏振光探测矢量分离[95]; (e)双光入射模式下对应的编码光电压输出信号及三波长圆偏振信号提取的示意图[95]; (f)芯片级全斯托克斯偏振仪结构示意图, 插图展示Z形超表面的扫描电镜图[96]; (g)优化光电转换矩阵表示法[96]
Fig. 10. (a) Schematic diagram of the MoS2-Ag nanograting array structure a [93]; (b) image preprocessing process[93]; (c) comparison of image recognition rates before and after preprocessing[93]; (d) the dual-arm metasurface structure on graphene can localize light of different wavelengths and handedness on either side of the dual arms, generating vectorial photocurrents[95]; (e) corresponding encoded photovoltage output signal in dual light incidence mode[95]; (f) schematic of the on-chip full-Stokes polarimeter[96]; (g) matrix representation of the OCM[96].
表 1 不同等离激元结构对范德瓦耳斯探测器偏振探测器件的增强机制、探测器性能指标、偏振性能指标对比
Table 1. Comparison of plasmonic structures for enhancing polarization-sensitive van der Waals photodetectors: mechanisms, detector metrics, and polarization metrics.
等离激元结构 二维材料 增强机制 响应度A/W 探测率D*
Jones响应时间 偏振比 响应光谱范围 文献 各向异性纳米结构 BP LSPR 802.42 — 6.36 ps 118.4 615—740 nm
765—865 nm[63] BP LSPR 14.2 — < 90 μs 8.7 1.55—4 μm [65] MoS2/In2Se3 SPPs 28.5 9.81
×1012上升: 195 ns
下降: 222 ns1.88 近红外波段 [68] 周期性光栅 ReS2/WSe2 Mie散射 27.3 — 3.7 ms 12.6 405—532 nm [59] 石墨烯 SPPs 2.95 0.28
×107上升: 39 ms
下降: 32.1 ms6.65 635—1550 nm [61] In2Se3 SPPs 0.53 2.5
×1010上升: 380 μs
下降: 300 μs-1.1 633 nm至
近红外波段[72] 手性结构 In2Se3 LSPR 0.19 — 上升: 320 μs
下降: 425 μs1.6×104 500—1100 nm [76] 石墨烯 LSPR 15.6 — < 667 ns ≥ 1 中红外波段 [77] MoS2 SPPs 约1×10–4 — 上升: 14 μs
下降: 11 μs3 1200—1600 nm [96] 
下载: 导出CSV
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