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Since high-mobility electron gas, which is also called two-dimensional electron gas, was discovered at the LaAlO3/SrTiO3 (LAO/STO) interface, SrTiO3-based heterostructures and nanostructures have become an attractive platform for novel nanoelectronic devices. Exploring the novel physical properties of LAO/STO interface and the mechanisms of interface effect is the key to designing and fabricating the new photoelectric devices. The LAO/STO sample is prepared on an STO (001) substrate by pulsed laser deposition. In order to study the influence of interface effect on photovoltaic effect in the LAO/STO sample, a KrF pulse laser with a wavelength of 248 nm and an energy density of 50 mJ/cm2 is chosen as an ultraviolet light source, a sampling oscilloscope of 350 MHz is used to measure the photovoltages, and a precision adjustable slit is adopted to control the size of irradiation area. The photovoltaic effect is studied under the condition of applied electric field at ambient temperature. The experimental results prove that the photovolatge of irradiating on the side of sample (LAO/STO interface) is higher than on the front of sample (film surface) under the same area of irradiation. Lateral photovoltaic effect is discovered in the LAO/STO sample. Irradiating on the side of sample (LAO/STO interface) can further improve the lateral photovoltaic effect in the LAO/STO sample. The open-circuit photovoltage depends linearly on the illuminated position, and the sensitivity reaches 36.8 mV/mm. The sensitivity of the lateral photovoltaic effect can be modified by the bias voltage. The experimental results not only contributes to better understanding the interface effect in LAO/STO interface, but also provides a basis for designing and using photoelectric devices for position-sensitive detection.
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Keywords:
- LaAlO3/SrTiO3 interface /
- interface effect /
- latera thel photovoltaic effect /
- photoelectric properties
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图 1 LAO/STO样品的截面TEM图 (a)整体TEM图; (b) LAO/STO界面高分辨TEM图; (c) STO/LAO界面高分辨TEM图
Figure 1. TEM images of LAO/STO sample: (a) TEM image of LAO/STO sample; (b) HR-TEM image of LAO/STO interface; (c) HR-TEM image of STO/LAO interface.
图 2 (a) 不同偏压下248 nm激光正面照射LAO/STO样品光生电压波形图; (b) 正面照射光生电压随偏压的变化; (c) 不同偏压下激光侧面照射LAO/STO样品光生电压波形图; (d) 侧面照射光生电压随偏压的变化
Figure 2. (a) Photovoltaic waveforms for LAO/STO sample at different bias voltages under the 248 nm laser front illumination; (b) photovoltages as a function of bias voltages under front illumination; (c) photovoltaic waveforms for LAO/STO sample at different bias voltages under side illumination; (d) photovoltages as a function of bias voltages under side illumination.
图 3 (a) 正面照射样品光生电压随光照区域宽度d展宽的变化; (b) 侧面照射样品光生电压随光照区域宽度d展宽的变化
Figure 3. (a) Photovoltages as a function of irradiated area width d under front illumination; (b) photovoltages as a function of irradiated area width d under side illumination.
图 4 (a) 正面照射样品光生电压随光照区域位置X的变化; (b) 侧面照射样品光生电压随光照区域位置X的变化
Figure 4. (a) Photovoltages as a function of irradiated position X under front illumination; (b) photovoltages as a function of irradiated position X under side illumination.
图 5 偏压为60 V时正面和侧面照射样品光生电压随光照区域位置的变化
Figure 5. Photovoltages as a function of irradiated position under front illumination and side illumination at bias voltage 60 V.
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[1] Tra V T, Chen J W, Huang P C, Huang B C, Cao Y, Yeh C H, Liu H J, Eliseev E A, Morozovska A N, Lin J Y, Chen Y C, Chu M W, Chiu P W, Chiu Y P, Chen L Q, Wu C L, Chu Y H 2013 Adv. Mater. 25 3357
Google Scholar
[2] Thiel S, Hammerl G, Schmehl A, Schneider C W, Mannhart J 2006 Science 313 1942
Google Scholar
[3] Reyren N, Thiel S, Caviglia A D, Kourkoutis L F, Hammerl G, Richter C, Schneider C W, Kopp T, Ruetschi A S, Jaccard D, Gabay M, Muller D A, Triscone J M, Mannhart J 2007 Science 317 1196
Google Scholar
[4] Caviglia A D, Gariglio S, Reyren N, Jaccard D, Schneider T, Gabay M, Thiel S, Hammerl G, Mannhart J, Triscone J M 2008 Nature 456 624
Google Scholar
[5] Bi F, Huang M, Ryu S, Lee H, Bark C W, Eom C B, Irvin P, Levy J 2014 Nat. Commun. 5 5019
Google Scholar
[6] 李敏, 时鑫娜, 张泽霖, 吉彦达, 樊济宇, 杨浩 2019 物理学报 68 087302
Google Scholar
Li M, Shi X N, Zhang Z L, Ji Y D, Fan J Y, Yang H 2019 Acta Phys. Sin. 68 087302
Google Scholar
[7] Li L, Richter C, Mannhart J, Ashoori R C 2011 Nat. Phys. 7 762
Google Scholar
[8] Bert J A, Kalisky B, Bell C, Kim M, Hikita Y, Hwang H Y, Moler K A 2011 Nat. Phys. 7 767
Google Scholar
[9] Lee P, Singh V, Guo G, Liu H J, Lin J C, Chu Y H, Chen C, Chu M W 2016 Nat. Commun. 7 12773
Google Scholar
[10] 朱立峰, 潘文远, 谢燕, 张波萍, 尹阳, 赵高磊 2019 物理学报 68 217701
Google Scholar
Zhu L F, Pan W Y, Xie Y, Zhang B P, Yin Y, Zhao G L 2019 Acta Phys. Sin. 68 217701
Google Scholar
[11] Sharma P, Huang Z, Li M, Li C, Hu S, Lee H, Lee J W, Eom C B, Pennycook S J, Seidel J 2018 Adv. Funct. Mater. 28 1707159
Google Scholar
[12] Bark C W, Sharma P, Wang Y, Baek S H, Lee S, Ryu S, Folkman C M, Paudel T R, Kumar A, Kalinin S V, Sokolov A, Tsymbal E Y, Rzchowski M S, Gruverman A, Eom C B 2012 Nano Lett. 12 1765
Google Scholar
[13] Huang M, Bi F, Bark C W, Ryu S, Cho K H, Eom C B, Levy J 2014 Appl. Phys. Lett. 104 161606
Google Scholar
[14] Ohtomo A, Hwang H Y 2004 Nature 427 423
Google Scholar
[15] Harsan Ma H J, Huang Z, Lu W M, Annadi A, Zeng S W, Wong L M, Wang S J, Venkatesan T, Ariando 2014 Appl. Phys. Lett. 105 011603
Google Scholar
[16] Brinkman A, Huijben M, Van Zalk M, Huijben J, Zeitler U, Maan J C, Van der Wiel W G, Rijnders G, Blank D H A, Hilgenkamp H 2007 Nat. Mater. 6 493
Google Scholar
[17] Ngo T D N, Chang J W, Lee K, Han S, Lee J S, Kim Y H, Jung M H, Doh Y J, Choi M S, Song J, Kim J 2015 Nat. Commun. 6 8035
Google Scholar
[18] Irvin P, Ma Y, Bogorin D F, Cen C, Bark C W, Folkman C M, Eom C B, Levy J 2010 Nat. Photonics 4 849
Google Scholar
[19] Behtash M, Nazir S, Wang Y, Yang K 2016 Phys. Chem. Chem. Phys. 18 6831
Google Scholar
[20] 刀流云, 张子涛, 肖煜同, 张明昊, 王帅, 何珺, 贾金山, 余乐军, 孙波, 熊昌民 2019 物理学报 68 067302
Google Scholar
Dao L Y, Zhang Z T, Xiao Y T, Zhang M H, Wang Sh, He J, Jia J S, Yu L J, Sun B, Xiong C M 2019 Acta Phys. Sin. 68 067302
Google Scholar
[21] Gu M, Wang J, Wu X S, Zhang G P 2012 J. Phys. Chem. C 116 24993
Google Scholar
[22] Nakagawa N, Hwang H Y, Muller D A 2006 Nat. Mater. 5 204
Google Scholar
[23] Bristowe N C, Littlewood P B, Artacho E 2011 Phys. Rev. B 83 205405
Google Scholar
[24] Kalabukhov A, Gunnarsson R, Börjesson J, Olsson E, Claeson T, Winkler D 2007 Phys. Rev. B 75 121404
Google Scholar
[25] Gunkel F, Brinks P, Susanne H E, Dittmann R, Huijben M, Kleibeuker J E, Koster G, Rijnders G, Waser R 2012 Appl. Phys. Lett. 100 052103
Google Scholar
[26] Caputo M, Boselli M, Filippetti A, Lemal S, Li D, Chikina A, Cancellieri C, Schmitt T, Triscone J M, Ghosez P, Gariglio S, Strocov V N 2020 Phys. Rev. Mater. 4 035001
Google Scholar
[27] Bell C, Harashima S, Hikita Y, Hwang H Y 2009 Appl. Phys. Lett. 94 222111
Google Scholar
[28] Gariglio S, Fete A, Triscone J M 2016 J. Phys. Condens. Matter 27 283201
[29] Arnold D, Fuchs D, Wolff K, Schafer R 2019 Appl. Phys. Lett. 115 122601
Google Scholar
[30] Yu C, Wang H 2010 Sensors 10 10155
Google Scholar
[31] Lucovsky G 1960 J. Appl. Phys. 31 1088
Google Scholar
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