Simulation of terahertz tunable seven-band perfect absorber based on high frequency detection function of Dirac semi-metallic nanowires

LU Wenqiang; YI Yingting; SONG Qianju; ZHOU Zigang; YI Yougen; ZENG Qingdong; YI Zao

doi:10.7498/aps.74.20241516

Abstract

In this work, a tunable perfect absorber in the terahertz range is designed based on Dirac semimetal nanowires, featuring high sensitivity, quality factor, and dual functionality. The absorber achieves perfect absorptions across seven bands in a range of 0–14.5 THz: f₁ = 5.032 THz (84.43%), f₂ = 5.859 THz (96.23%), f₃ = 7.674 THz (91.36%), f₄ = 9.654 THz (99.02%), f₅ = 11.656 THz (93.84%), f₆ = 12.514 THz (98.47%), and f₇ = 14.01 THz (97.32%). To ensure structural stability during design, the periodicity of the wire array structure is carefully considered. Verification of the absorber’s performance is conducted through the calculation of impedance matching. The analyses of the surface electric field and magnetic field at resonance frequency elucidate the underlying physical mechanisms governing the absorber’s characteristics. The values of quality factor (Q) for the seven resonance points are computed, with a maximum Q of 219.41. Further investigations by changing the external refractive index show that the maximum sensitivity value and the figure of merit (FOM) value are 5421.43 GHz/RIU and 35.204 RIU^–1, respectively. Then, by discussing the influence of key parameters on the device, we conclude that the device can achieve the choice of dual fixed performance. Dynamic modulation capabilities are demonstrated by changing the Dirac semimetal’s Fermi energy. Additionally, by changing the incident angle of the external electromagnetic wave, it is found that the device has good stability in the medium frequency band and low frequency band, but it is greatly affected by the external incident angle in the high frequency band, thus necessitating careful consideration in practical applications. In conclusion, the proposed absorber holds significant promise for imaging, sensing, and detection applications, providing the valuable insights for designing optoelectronic devices.

Keywords:

metamaterial /
terahertz /
Dirac semi-metal /
electromagnetic multifrequency absorption /
Fano resonance /
tunable

Authors and contacts

1.
School of Mathematics and Science, Southwest University of Science and Technology, Mianyang 621010, China
2.
College of Physics, Central South University, Changsha 410083, China
3.
School of Physics and Electronic-information Engineering, Hubei Engineering University, Xiaogan 432000, China
4.
School of Chemistry and Chemical Engineering, Jishou University, Jishou 416000, China

Corresponding author: SONG Qianju, qjsong@swust.edu.cn ; YI Zao, yizaomy@swust.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 12204388, 12074151) and the Scientific Research Foundation of the Science and Technology Department of Sichuan Province, China (Grant No. 2022NSFSC1804).

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References

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Cited By

图 1 吸收器的单元结构组成及其结构参数

Figure 1. Unit structure of the absorber and its structural parameters.

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图 2 不同费米能级下BDS介电常数的实部(a)和虚部(b)随频率的变化

Figure 2. Variations of real part (a) and imaginary part (b) of the permittivity of BDS with frequency at different Fermi levels.

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图 3 (a)吸收器在4—14.5 THz范围内的特性曲线; (b)吸收器在其工作区间的相对阻抗(实部和虚部)示意图

Figure 3. (a) Characteristic curves of the absorber in the range of 4–14.5 THz; (b) diagram of the relative impedance (real and imaginary parts) of the absorber in its operating interval.

DownLoad: Full-Size Img PowerPoint

图 4 吸收器在不同频率处的电场分布　(a) f ₁ = 5.032 THz; (b) f ₂ = 5.859 THz; (c) f ₃ = 7.674 THz; (d) f ₄ = 9.654 THz; (e) f ₅ = 11.656 THz; (f) f ₆ = 12.514 THz; (g) f ₇ = 14.01 THz

Figure 4. Electric field distribution of absorber at different frequencies: (a) f ₁ = 5.032 THz; (b) f ₂ = 5.859 THz; (c) f ₃ = 7.674 THz; (d) f ₄ = 9.654 THz; (e) f ₅ = 11.656 THz; (f) f ₆ = 12.514 THz; (g) f ₇ =14.01 THz.

DownLoad: Full-Size Img PowerPoint

图 5 吸收器在不同频率处的磁场分布　(a) f ₁ = 5.032 THz; (b) f ₂ = 5.859 THz; (c) f ₃ = 7.674 THz; (d) f ₄ = 9.654 THz; (e) f ₅ = 11.656 THz; (f) f ₆ = 12.514 THz; (g) f ₇ = 14.01 THz

Figure 5. Magnetic field distribution of absorber at different frequencies: (a) f ₁ = 5.032 THz; (b) f ₂ = 5.859 THz; (c) f ₃ = 7.674 THz; (d) f ₄ = 9.654 THz; (e) f ₅ = 11.656 THz; (f) f ₆ = 12.514 THz; (g) f ₇ =14.01 THz.

DownLoad: Full-Size Img PowerPoint

图 6 (a)不同折射率下吸收器的吸收光谱; (b)谐振频率点随折射率的变化; (c) 7种模式的吸收率与折射率的对应关系

Figure 6. (a) Absorption spectra of absorbers with different refractive indices; (b) the change of resonant frequency points with refractive index; (c) the corresponding relationship between absorptivity and refractive index of 7 modes.

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图 7 (a)不同BDS的费米能对吸收率的影响; (b) 7个共振频率点与费米能的关系; (c) 7个共振频率点处吸收率与费米能的关系

Figure 7. (a) Effect of Fermi energy of different Dirac semi-metals on absorption efficiency; (b) the relationship between seven resonance frequency points and Fermi energy; (c) the relationship between the absorption rate and Fermi energy at seven resonance frequency points.

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表 1 本文所提出的吸收器的Q值与近年来类似吸收器之间的比较

Table 1. Comparison of the Q value of the proposed absorber with similar absorbers in recent years.

参考文献 [48] [49] [50] [51] [52] 本文

Q 55.59 73 77.89 106 154 219.41

DownLoad: CSV

表 2 本文所提出的吸收器的灵敏度与近年来类似吸收器之间的比较

Table 2. Comparison of the sensitivity of the proposed absorber with similar absorbers in recent years.

参考文献 [51] [54] [55] [56] [57] 本文

S/(GHZ·RIU^–1) 23.8 74.43 96.2 560 2475 5421.43

DownLoad: CSV

[1]	Li J T, Wang G C, Yue Z, Liu J Y, Li J, Zheng C L, Zhang Y T, Zhang Y, Yao J Q 2022 Opto-Electron Adv. 5 210062 Google Scholar
[2]	张学进, 陆延青, 陈延峰, 朱永元, 祝世宁 2017 物理学报 66 148705 Google Scholar Zhang X J, Lu Y Q, Chen Y F, Zhu Y Y, Zhu S N 2017 Acta Phys. Sin. 66 148705 Google Scholar
[3]	黄若彤, 李九生 2023 物理学报 72 054203 Google Scholar Huang R T, Li J S 2023 Acta Phys. Sin. 72 054203 Google Scholar
[4]	Yue Z, Li J T, Li J, Zheng C L, Liu J Y, Wang G C, Xu H, Chen M Y, Zhang Y T, Zhang Y, Yao J Q 2022 Opto-Electron Sci. 1 210014 Google Scholar
[5]	Li W X, Zhao W C, Cheng S B, Yang W X, Yi Z, Li G F, Zeng L C, Li H L, Wu P H, Cai S S 2023 Surf. Interfaces 40 103042 Google Scholar
[6]	Sun W F, Wang X K, Zhang Y 2022 Opto-Electron. Sci. 1 220003 Google Scholar
[7]	Li W X, Yi Y T, Yang H, Cheng S B, Yang W X, Zhang H F, Yi Z, Yi Y G, Li H L 2023 Commun. Theor. Phys. 75 045503 Google Scholar
[8]	陈俊, 杨茂生, 李亚迪, 程登科, 郭耿亮, 蒋林, 张海婷, 宋效先, 叶云霞, 任云鹏, 任旭东, 张雅婷, 姚建铨 2019 物理学报 68 247802 Google Scholar Chen J, Yang M S, Li Y D, Cheng D K, Guo G L, Jiang L, Zhang H T, Song X X, Ye Y X, Ren Y P, Ren X D, Zhang Y T, Yao J Q 2019 Acta Phys. Sin. 68 247802 Google Scholar
[9]	Zhao H, Wang X K, Liu S T, Zhang Y 2023 Opto-Electron Adv. 6 220012 Google Scholar
[10]	Song H J, Nagatsuma T 2011 IEEE T. Thz. Sci. Techn. 1 256 Google Scholar
[11]	Gigli C, Leo G 2022 Opto-Electron Adv. 5 210093 Google Scholar
[12]	Li F Y, Li Y X, Tang T T, Liao Y L, Lu Y C, Liu X Y, Wen Q Y 2022 J. Alloys Compd. 928 167232 Google Scholar
[13]	Zhu J, Xiong J Y 2023 Measurement 220 113302 Google Scholar
[14]	Cheng Y Z, Withayachumnankul W, Upadhyay A, Headland D, Nie Y, Gong R Z, Bhaskaran M, Sriram S, Abbott D 2015 Adv. Opt. Mater. 3 376 Google Scholar
[15]	Li W X, Cheng S B, Zhang H F, Yi Z, Tang B, Ma C, Wu P H, Zeng Q D, Raza R 2024 Commun. Theor. Phys. 76 065701.Google Scholar
[16]	Chen H T, Padilla W J, Zide J M O, Gossard A C, Taylor A J, Averitt R D 2006 Nature 444 597 Google Scholar
[17]	Cao T, Lian M, Chen X Y, Mao L B, Liu K, Jia J Y, Su Y, Ren H N, Zhang S J, Xu Y H, Chen J J, Tian Z, Guo D M 2022 Opto-Electron Sci. 1 210010 Google Scholar
[18]	沈晓鹏, 崔铁军, 叶建祥 2012 物理学报 61 058101 Google Scholar Shen X P, Cui T J, Ye J X 2012 Acta Phys. Sin. 61 058101 Google Scholar
[19]	He M Y, Wang Q Q, Zhang H, Xiong J, Liu X P, Wang J Q 2024 Phys. Scr. 99 035506 Google Scholar
[20]	Landy N I, Sajuyigbe S, Mock J J, Smith D R, Padilla W J 2008 Phys. Rev. Lett. 100 207402 Google Scholar
[21]	Zhan Y, Yin H Y, Wang J H, Yao H W, Fan C Z 2022 Res. Opt. 8 100255 Google Scholar
[22]	Mao Y, Zhang H, Xiong J, Liu X P, Wang Q Q, Wang J Q 2024 J. Phys. D: Appl. Phys. 57 255111 Google Scholar
[23]	Ullah K, Meng Y F, Sun Y, Yang Y K, Wang X J, Wang A R, Wang X R, Xiu F X, Shi Y, Wang F Q 2020 Appl. Phys. Lett. 117 011102 Google Scholar
[24]	Moll P J W, Nair N L, Helm T, Potter A C, Kimchi I, Vishwanath A, Analytis J G 2016 Nature 535 266 Google Scholar
[25]	Borisenko S, Gibson Q, Evtushinsky D, Zabolotnyy V, Büchner B, Cava R J 2014 Phys. Rev. Lett. 113 027603 Google Scholar
[26]	Cheng S B, Li W X, Zhang H F, Akhtar M N, Yi Z, Zeng Q D, Ma C, Sun T Y, Wu P H, Ahmad S 2024 Opt. Commun. 569 130816 Google Scholar
[27]	Chen Z Y, Cheng S B, Zhang H F, Yi Z, Tang B, Chen J, Zhang J G, Tang C J 2024 Phys. Lett. A 517 129675 Google Scholar
[28]	Li W X, Ma J, Zhang H F, Cheng S B, Yang W X, Yi Z, Yang H, Zhang J G, Wu X W, Wu P H 2023 Phys. Chem. Chem. Phys. 25 8489 Google Scholar
[29]	Liang S R, Cheng S B, Zhang H F, Yang W X, Yi Z, Zeng Q D, Tang B, Wu P H, Ahmad S, Sun T Y 2024 Ceram. Int. 50 23611 Google Scholar
[30]	Li W X, Zhao W C, Cheng S B, Zhang H F, Yi Z, Sun T Y, Wu P H, Zeng Q D, Raza R 2024 Opt. Lasers Eng. 181 108368 Google Scholar
[31]	Ma J, Wu P H, Li W X, Liang S R, Shangguan Q Y, Cheng S B, Tian Y H, Fu J Q, Zhang L B 2023 Diam. Relat. Mater. 136 109960 Google Scholar
[32]	Zhu J, Xiong J Y 2023 Opt. Express 31 36677 Google Scholar
[33]	Huang S L, Chen Y, Yu C C, Chen S J, Zhou Z K, Liang J, Dai W 2024 Chinese J. Phys. 89 740 Google Scholar
[34]	Wang J L, Hassan M, Liu J W, Yu S H 2018 Adv. Mater. 30 1803430 Google Scholar
[35]	Cheng C, Gonela R K, Gu Q, Haynie D T 2005 Nano Lett. 5 175 Google Scholar
[36]	Qu T, Zhao Y B, Li Z B, Wang P P, Cao S B, Xu Y W, Li Y Y, Chen A H 2016 Nanoscale 8 3268 Google Scholar
[37]	Fu R, Chen K X, Li Z L, Yu S H, Zheng G X 2022 Opto-Electron Sci. 1 220011 Google Scholar
[38]	Shangguan Q Y, Zhao Y, Song Z J, Wang J, Yang H, Chen J, Liu C, Cheng S B, Yang W X, Yi Z 2022 Diam. Relat. Mater. 128 109273 Google Scholar
[39]	Li W X, Liu Y H, Ling L, Sheng Z X, Cheng S B, Yi Z, Wu P H, Zeng Q D, Tang B, Ahmad S 2024 Surf. Interfaces 48 104248 Google Scholar
[40]	Liang S R, Xu F, Li W X, Yang W X, Cheng S B, Yang H, Chen J, Yi Z, Jiang P P 2023 Appl. Therm. Eng. 232 121074 Google Scholar
[41]	Zhang Y J, Yi Y T, Li W X, Liang S R, Ma J, Cheng S B, Yang W X, Yi Y G 2023 Coatings 13 531 Google Scholar
[42]	Huang X M, Chen Y, Chen S J, Yang K, Liang J, Zhou Z K, Dai W 2023 Res. Phys. 47 106364 Google Scholar
[43]	Zeng C, Lu H, Mao D, Du Y Q, Hua H, Zhao W, Zhao J L 2022 Opto-Electron. Adv. 5 200098 Google Scholar
[44]	Li W X, Liu M S, Cheng S B, Zhang H F, Yang W X, Yi Z, Zeng Q D, Tang B, Ahmad S, Sun T Y 2024 Diam. Relat. Mater. 142 110793 Google Scholar
[45]	Liang S R, Xu F, Yang H, Cheng S B, Yang W X, Yi Z, Song Q J, Wu P H, Chen J, Tang C J 2023 Opt. Laser Technol. 158 108789 Google Scholar
[46]	Shangguan Q Y, Chen Z, Yang H, Cheng S B, Yang W X, Yi Z, Wu X, Wang S, Yi Y, Wu P H 2022 Sensors 22 6483 Google Scholar
[47]	Shangguan Q Y, Chen H, Yang H, Liang S R, Zhang Y J, Cheng S B, Yang W X, Yi Z, Luo Y, Wu P H 2022 Diam. Relat. Mater. 125 108973 Google Scholar
[48]	Sourav A, Li Z, Huang Z, Botcha V D, Hu C, Ao J P, Peng Y, Kuo H C, Wu J, Liu X, Ang K W 2018 Adv. Opt. Mater. 6 1800461 Google Scholar
[49]	Piper J R, Liu V, Fan S 2014 Appl. Phys. Lett. 104 251110 Google Scholar
[50]	Li H J, Qin M, Wang L L, Zhai X, Ren R Z, Hu J G 2017 Opt. Express 25 31612 Google Scholar
[51]	Wang Y L, Cheng W, Qin J Y, Han Z H 2019 Opt. Commun. 434 163 Google Scholar
[52]	Zhou K, Cheng Q, Lu L, Li B W, Song J L, Luo Z X 2020 Opt. Express 28 1647 Google Scholar
[53]	Li W X, Xu F, Cheng S B, Yang W X, Liu B, Liu M S, Yi Z, Tang B, Chen J, Sun T Y 2024 Opt. Laser Technol. 169 110186 Google Scholar
[54]	Zheng W, Fan F, Chen M, Bai J J, Chang S J 2017 Infrared Laser Eng. 46 420003 Google Scholar
[55]	Pan W, Yan Y J, Ma Y, Shen D J 2019 Opt. Commun. 431 115 Google Scholar
[56]	Lu W Q, Wu P H, Bian L, Yan J Q, Yi Z, Liu M S, Tang B, Li G F, Liu C 2024 Opt. Laser Technol. 174 110650 Google Scholar
[57]	Chen T, Jiang W J, Yin X H 2021 Micro. Nanostructures 154 106898 Google Scholar

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Vol. 74, Issue 3 - 2025-02-05

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