X-ray irradiation effects of carbon nanotube field-effect transistors

ZENG Tianxiang; LI Jifang; GUO Hongxia; MA Wuying; LEI Zhifeng; ZHONG Xiangli; ZHANG Hong; WANG Songwen

doi:10.7498/aps.74.20241670

Abstract

To further understand the patterns and mechanisms of total ionizing dose (TID) radiation damage in carbon nanotube field-effect transistor (CNTFET), the total dose effects of 10 keV X-ray irradiation on N-type and P-type CNTFETs are investigated in this work. The irradiation dose rate is 200 rad(Si)/s, with a cumulative dose of 100 krad(Si) for N-type devices and 90 krad(Si) for P-type devices. The differences in TID effect between N-type and P-type CNTFETs under the conditions of floating gate bias and on-state bias, the influence of irradiation on the hysteresis characteristics of N-type CNTFETs, and the influence of channel sizes on the TID effects of N-type CNTFETs are also explored. The results indicate that both types of transistors, after being irradiated, exhibit the threshold voltage shift, transconductance degradation, increase in subthreshold swing, and decrease in saturation current. In the irradiation process, N-type devices under floating gate bias suffer more severe damage than those under on-state bias, while P-type devices under on-state bias experience more significant damage than those under floating gate bias. The hysteresis widths of N-type devices decrease after being irradiated, and the TID damage becomes more severe with the increase of channel dimensions. The main reason for the degradation of device parameters is the trap charges generated in the irradiated process. The gate bias applied during irradiation affects the capture of electrons or holes by traps in the gate dielectric, resulting in different radiation damage characteristics for different types of devices. The reduction in the hysteresis width of N-type devices after being irradiated may be attributed to the negatively charged trap charges generated during irradiation, which hinders the capture of electrons by water molecules, OH groups, and traps in the gate dielectric. Moreover, the channel dimensions of the transistors also influence their radiation response: larger channel dimensions result in more trap charges generated in the gate dielectric and at the interface during irradiation, leading to more severe transistor damage.

Keywords:

carbon nanotube field-effect transistor /
X-ray irradiation /
total dose effect

Authors and contacts

1.
School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
2.
Northwest Institute of Nuclear Technology, Xi’an 710024, China
3.
Key Laboratory of Reliability Physics and Application Technology for Electronic Components, Fifth Institute of Electronics, Ministry of Industry and Information Technology, Guangzhou 511370, China

Corresponding author: GUO Hongxia, guohongxia@nint.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 12275230, 12027813).

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References

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Cited By

图 1 器件结构示意图

Figure 1. Device structure diagram.

DownLoad: Full-Size Img PowerPoint

图 2 辐照前后N型器件的电学曲线　(a)转移特性曲线; (b)输出特性曲线

Figure 2. Electrical curves of N-type devices before and after irradiation: (a) Transfer characteristic curve; (b) output characteristic curve.

DownLoad: Full-Size Img PowerPoint

图 3 辐照前后P型器件的电学曲线　(a)转移特性曲线; (b)输出特性曲线

Figure 3. Electrical curves of P-type devices before and after irradiation: (a) Transfer characteristic curve; (b) output characteristic curve.

DownLoad: Full-Size Img PowerPoint

图 4 辐照前后N型和P型器件的电学参数　(a)跨导; (b)亚阈值摆幅; (c)阈值电压

Figure 4. Electrical parameters of N-type and P-type devices before and after irradiation: (a) Transconductance; (b) subthreshold swing; (c) threshold voltage.

DownLoad: Full-Size Img PowerPoint

图 5 不同偏置条件下辐照前后的转移特性曲线　(a) N型器件; (b) P型器件

Figure 5. Transfer characteristic curves before and after irradiation under different bias conditions: (a) N-type devices; (b) P-type devices.

DownLoad: Full-Size Img PowerPoint

图 6 辐照前后回滞特性的变化

Figure 6. Changes in hysteresis characteristics before and after irradiation.

DownLoad: Full-Size Img PowerPoint

图 7 辐照前后不同沟道尺寸的CNTFET转移曲线

Figure 7. Transfer curves of CNTFET with different channel sizes before and after irradiation.

DownLoad: Full-Size Img PowerPoint

图 8 不同沟道尺寸的未辐照CNTFET归一化后的转移特性曲线与跨导

Figure 8. Normalized transfer characteristic curves and transconductance of unirradiated CNTFET with different channel sizes.

DownLoad: Full-Size Img PowerPoint

表 1 N型和P型器件辐照前后电学参数变化量

Table 1. Changes in electrical parameters of N-type and P-type devices before and after irradiation.

器件类型 ΔG_m/μS 标准差 ΔSS/(mV·dec^–1) 标准差 ΔV_th/mV 标准差

N型器件 –0.275 0.02 50 0.015 149 0.025

P型器件 –1 0.022 20 0.02 –45 0.018

DownLoad: CSV

表 2 辐照前后不同沟道尺寸的CNTFET电学参数变化

Table 2. Changes in electrical parameters of CNTFET with different channel sizes before and after irradiation.

宽长比 ΔG_m/μS ΔSS/(mV·dec^–1) ΔV_th/V

30 µm/5 µm –0.34 52 0.15

35 µm/5 µm –0.35 53 0.19

40 µm/5 µm –0.65 60 0.7

DownLoad: CSV

[1]	Qiu C G, Zhang Z Y, Xiao M M, Yang Y J, Zhong D L, Peng L M 2017 Science 355 271 Google Scholar
[2]	Franklin A D, Luisier M, Han S J, Tulevski G, Breslin C M, Gignac L, Lundstrom M S, Haensch W 2012 Nano Lett. 12 758 Google Scholar
[3]	Chen B Y, Zhang P P, Ding L, Han J, Qiu S, Li Q W, Zhang Z Y, Peng L M 2016 Nano Lett. 16 5120 Google Scholar
[4]	Zhu M G, Si J, Zhang Z Y, Peng L M 2018 Adv. Mater. 30 1707068 Google Scholar
[5]	Yang Y Y, Ding L, Chen H J, Han J, Zhang Z Y, Peng L M 2018 Nano Res. 11 300 Google Scholar
[6]	Shulaker M M, Hills G, Patil N, Wei H, Chen H Y, Wong H S, Mitra S 2013 Nature 501 526 Google Scholar
[7]	De Volder M F, Tawfick S H, Baughman R H, Hart A J 2013 Science 339 535 Google Scholar
[8]	刘一凡, 张志勇 2022 物理学报 71 068503 Google Scholar Liu Y F, Zhang Z Y 2022 Acta Phys. Sin. 71 068503 Google Scholar
[9]	马武英, 陆妩, 郭旗, 何承发, 吴雪, 王信, 丛忠超, 汪波, 玛丽娅 2014 物理学报 63 026101 Google Scholar Ma W Y, Lu W, Guo Q, He C F, Wu X, Wang X, Cong Z C, Wang B, Maria 2014 Acta Phys. Sin. 63 026101 Google Scholar
[10]	董世剑, 郭红霞, 马武英, 吕玲, 潘霄宇, 雷志锋, 岳少忠, 郝蕊静, 琚安安, 钟向丽, 欧阳晓平 2020 物理学报 69 078501 Google Scholar Dong S J, Guo H X, Ma W Y, Lv L, Pan X Y, Lei Z F, Yue S Z, Hao R J, Ju A A, Zhong X L, Ouyang X P 2020 Acta Phys. Sin. 69 078501 Google Scholar
[11]	Krasheninnikov A, Nordlund K, Sirviö M, Salonen, E, Keinonen J 2001 Phys. Rev. B 63 245405 Google Scholar
[12]	Tolvanen A, Kotakoski J, Krasheninnikov A, Nordlund K 2007 Appl. Phys. Lett. 91 173109 Google Scholar
[13]	Krasheninnikov A V, Nordlund K 2010 J. Appl. Phys. 107 071301 Google Scholar
[14]	Zhao Y D, Li D Q, Xiao L, Liu J K, Xiao X Y, L G H, Jin Y H, Jiang K L, Wang J P, Fan S S, Li Q Q 2016 Carbon 108 363 Google Scholar
[15]	Zhang X R, Zhu H P, Peng S A, Xiong G D, Zhu C Y, Huang X N, Cao S R, Zhang J J, Yan Y P, Yao Y, Zhang D Y, Shi J Y, Wang L, Li B, Jin Z 2021 J. Semicond. 42 112002 Google Scholar
[16]	Zhu M G, Zhou J S, Sun P K, Peng L M, Zhang Z Y 2021 ACS Appl. Mater. Interfaces 13 47756 Google Scholar
[17]	Kanhaiya P S, Yu A, Netzer R, Kemp W, Doyle D, Shulaker M M 2021 ACS Nano 15 17310 Google Scholar
[18]	Petrosjanc K O, Adonin A S, Kharitonov I A, Sicheva M V 1994 Proceedings of 1994 IEEE International Conference on Microelectronic Test Structures Moscow, Russia, March 22–25, 1994 p126
[19]	Oldham T R, Mclean F B 2002 IEEE T. Nucl. Sci. 50 483
[20]	Galloway K F, Gaitan M, Russell T J 1984 IEEE T. Nucl. Sci. 31 1497 Google Scholar
[21]	Lu P, Zhu M G, Zhao P X, Fan C W, Zhu H P, Gao J T, Y C, Han Z S, Li B, Liu J, Zhang Z Y 2023 ACS Appl. Mater. Interfaces 15 10936 Google Scholar
[22]	McMorrow J J, Cress C D, Affouda C 2012 ACS Nano 6 5040 Google Scholar
[23]	Belyakov V V, Pershenkov V S, Zebrev G I, Sogoyan A V, Chumakov A I, Nikiforov A Y, Skorobogatov P K 2003 Russian Microelectron. 32 25 Google Scholar
[24]	Ni H Z, Li M, Li X H, Zhu X W, Liu H H, Xu M 2022 IEEE T. Electron Dev. 69 1069 Google Scholar
[25]	Kim W, Javey A, Vermesh O, Wang Q, Li Y M, Dai H J, 2003 Nano Letters 3 193 Google Scholar
[26]	Chua L L, Zaumseil J, Chang J F, Ou E C, Ho P K, Sirringhaus H, Friend R H 2005 Nature 434 194 Google Scholar
[27]	Lee S, Koo B, Shin J, Lee E, Park H, Kim H 2006 Appl. Phys. Lett. 88 99
[28]	Cai X, Gerlach C P, Frisbie C D 2007 J. Phys. Chem. C 111 452 Google Scholar
[29]	Ha T J, Kiriya D, Chen K, Javey A 2014 ACS Appl. Mater. Interfaces 6 8441 Google Scholar
[30]	Wang Y W, Wang S, Ye H D, Zhang W H, Xiang L 2023 IEEE T. Dev. Mater. Re. 23 571 Google Scholar

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