-
高温超导薄膜因其微波表面电阻低, 可用于尖端高温超导微波器件的制作. 然而由于高温超导材料特殊的二维超导机制和极短的超导相干长度, 高温超导材料的微波表面电阻对微结构特别敏感. 为了探究高温超导材料微结构和微波电阻的联系, 采用脉冲激光沉积(PLD)技术在(00l)取向的MgO单晶衬底上生长了不同厚度的YBa2Cu3O7 –δ (YBCO)薄膜. 电学测量发现不同厚度的样品超导转变温度、常温电阻差别不大, 但超导态的微波表面电阻差异很大. 同步辐射三维倒空间扫描(3D-RSM)技术对YBCO薄膜微结构的表征表明: CuO2面平行于表面晶粒(c晶)的多寡、晶粒取向的一致性是造成超导态微波表面电阻差异的主要原因.High-temperature superconducting films can be used for fabricating the cutting-edge high-temperature superconducting microwave devices because of their low microwave surface resistances. However, the microwave surface resistances of high-temperature superconducting materials are particularly sensitive to microstructure due to their special two-dimensional superconducting mechanisms and extremely short superconducting coherence lengths. To investigate the correlations between microstructure and microwave surface resistance of high-temperature superconducting materials, YBa2Cu3O7-δ (YBCO) films with different thickness are grown on (00l)-oriented MgO single-crystal substrates by using the pulsed laser deposition (PLD) technique. Electrical measurements reveal that their superconducting transition temperatures and room temperature resistances do not show significant difference. However, their microwave surface resistances in superconducting state display a significant difference. The characterizations of the microstructures of YBCO films by synchrotron radiation three-dimensional reciprocal space mapping(3D-RSM) technique show that the number of the grains with CuO2 face parallel to the surface (c crystals), and the consistency of grain orientation are the main causes for the difference in microwave surface resistance.
[1] Feng D, Ming N B, Hong J F, Yang Y S, Zhu J S, Yang Z, Wang Y N 1980 Appl. Phys. Lett. 37 607
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图 2 1#样品和2#样品 (a)直流电阻R和(b)微波表面电阻Rs对温度的依赖关系
Fig. 2. Dependence of (a) DC resistance R and (b) microwave surface resistance Rs on temperature for sample 1# and sample 2#.
图 3 (a) 1#样品和(b)2#样品(108)衍射峰的3D-RSM; (c) 1#样品和(d)2#样品(108)衍射峰3D-RSM在水平面上的投影
Fig. 3. (a) 3D-RSM of (108) diffraction peaks for sample 1#, and (b) sample 2#; (c) projection of (108) 3D-RSM of sample 1#, and (d) sample 2# on the horizontal plane.
图 4 (a) 1#样品和(b) 2#样品(200)衍射峰的3D-RSM
Fig. 4. 3D-RSM of (a) sample #1, and (b) sample #2 around the (200) diffraction peak.
图 5 (a) 1#样品和(b) 2#样品(109)衍射峰的3D-RSM, 图中同时画出了(108)的3D-RSM; (c)和(d)是(a)和(b)在45º方向的垂直截面
Fig. 5. (a) 3D-RSM of sample 1#, and (b) sample 2# around the (109) diffraction peak, while 3D-RSM of the diffraction peak of (108) are plotted in the figure; (c) and (d) are vertical cross sections of (a) and (b) in the 45º direction.
表 1 YBCO(108), (018), (109), (019), (130)衍射峰的相对强度
Table 1. Relative intensities of YBCO (108), (018), (109), (019), (130) diffraction peaks.
衍射峰实测三维积分强度 (108)(018) (109)(019)(130) 卡片上的相对强度 13 5 6 4 5 YBCO 400 nm $ 9.136\times {10}^{6} $ $ 5.974\times {10}^{6} $ YBCO 1000 nm $ 11.503\times {10}^{6} $ $ 7.769\times {10}^{6} $ 
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表 2 由(109), (019), (130)衍射峰的强度计算出的c晶/b晶比
Table 2. The c-crystal to b-crystal ratio calculated from the intensities of the (109), (019), and (130) diffraction peaks.
样品厚度 衍射峰三维积分强度 c晶/b晶比 (109), (019) (130) YBCO 400 nm $ 1.015\times {10}^{6} $ $ 0.180\times {10}^{6} $ 5.639∶1 YBCO 1000 nm $ 1.278\times {10}^{6} $ $ 0.276\times {10}^{6} $ 4.630∶1
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[1] Feng D, Ming N B, Hong J F, Yang Y S, Zhu J S, Yang Z, Wang Y N 1980 Appl. Phys. Lett. 37 607
Google Scholar
[2] Zhu S N, Zhu Y Y, Zhang Z Y, Shu H, Wang H F, Hong J F, Ge C Z 1995 J. Appl. Phys. 77 5481
Google Scholar
[3] Zhu S N, Zhu Y Y, Ming N B 1997 Science 278 843
Google Scholar
[4] Jin H, Liu F M, Xu P, Xia J L, Zhong M L, Yuan Y, Zhou J W, Gong Y X, Wang W, Zhu S N 2014 Phys. Rev. Lett. 113 103601
Google Scholar
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Google Scholar
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Zhao Z X, Chen L Q, Yang Q S, Huang Y Z, Chen G H, Tang R M, Liu G R, Cui C G, Chen L, Wang L Z, Guo S Q, Li S L, Bi J Q 1987 Chin. Sci. Bull. 6 412
[12] Jorgensen J D, Veal B W, Paulikas A P, Nowicki L J, Crabtree G W, Claus H, Kwok W K 1990 Phys. Rev. B 41 1863
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Google Scholar
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Google Scholar
[15] Obradors X, Puig T 2014 Supercond. Sci. Technol. 27 044003
Google Scholar
[16] Larbalestier D, Gurevich A, Feldmann D M, Polyanskii A 2001 Nature 414 368
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Cai C B, Chi C X, Li M J, Liu Z Y, Lu Y M, Guo Y Q, Bai C Y, Lu Q, Dou W Z 2018 Chin. Sci. Bull. 64 827
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
[29] Eom C B, Marshall A F, Suzuki Y, Geballe T H 1992 Phys. Rev. B 46 11902
Google Scholar
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Google Scholar
[32] Wang X, Cai Y Q, Yao X, Wan W, Li F H, Xiong J, Tao B W 2008 J. Phys. D: Appl. Phys. 41 165405
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Google Scholar
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Google Scholar
[38] Binning G, Quate C F, Gerber C 1986 Phys. Rev. Lett. 56 930
Google Scholar
[39] Song B, Zhao S, Shen W, Collings C, Ding S Y 2020 Front. Plant Sci. 11 479
Google Scholar
[40] Beekman C, Siemons W, Ward T Z, Chi M, Howe J, Biegalski M D, Balke N, Maksymovych P, Farrar A K, Romero J B, Gao P, Pan X Q, Tenne D A, Christen H M 2013 Adv. Mater. 25 5561
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Google Scholar
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