Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations

Zhang Jin-Feng; Xu Jia-Min; Ren Ze-Yang; He Qi; Xu Sheng-Rui; Zhang Chun-Fu; Zhang Jin-Cheng; Hao Yue

doi:10.7498/aps.69.20191013

Abstract

Diamond has great potential applications in high-power, high-frequency semiconductor devices because of its wide band gap (5.5 eV), high thermal conductivity (22W/(cm·K)), and high carrier mobility (4500 cm²/(V·s) for electron, and 3800 cm²/(V·s) for hole). It has been widely considered as an ultimate semiconductor. From the analysis of our previous work, we find that the output current of field effect transistor based on hydrogen-terminated polycrystalline diamond is usually larger than that based on single crystal diamond, and that the preferential orientations of the polycrystalline diamond are mainly $ \langle 110\rangle $ and $ \langle 111\rangle $ shown by XRD results. Therefore, in order to further analyze the effect of surface orientation on the device performance of hydrogen-terminated diamond field effect transistor (FET), we study the devices fabricated respectively on the (110) plane and (111) plane single crystal diamond plates obtained from a single 3.5-mm-thick single crystal diamond grown by the microwave plasma chemical vapor deposition on the high-pressure high-temperature synthesized diamond substrate. Prior to processing the device, these diamond plates are characterized by atomic force microscope, Raman spectra and photoluminescence (PL) spectra. The results of Raman and PL spectra show that (110) plane and (111) plane plates originating from the same CVD single crystal diamond have no significant difference in optical property. Then the normally-on hydrogen-terminated diamond FET with a gate length of 6 μm is achieved. The device on (111) plane delivers a saturation drain current of 80.41 mA/mm at a gate voltage V_GS = –4 V, which is approximately 1.4 times that of the device on (110) plane. Meanwhile, the on-resistance of the device on (111) plane is 48.51 Ω·mm, and it is only 67% of the device on (110) plane. Analyses of the capacitance-voltage show that the hole concentration of the gated device on (110) plane and (111) plane are 1.34 × 10¹³ cm^–2 and 1.45 × 10¹³ cm^–2, respectively, approximately at the same level. In addition, the hole density of the device on both (110) and (111) plane increase near-linearly with the increase of gate voltage from the threshold voltage to – 4 V, indicating that the control effect of the gate on the carrier in the channel is uniform. The possible reason for the higher saturation drain current as well as the lower on-resistance of the device on (111) plane is that its sheet resistance is lower.

Keywords:

Authors and contacts

1.
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
2.
Shaanxi Joint Key Laboratory of Graphene, Xi’an 710071, China

Corresponding author: Ren Ze-Yang, zeyangren@xidian.edu.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB0406504), the Foundation of State Key Laboratory of China (Grant No. 6142605180102), the National Natural Science Foundation of China (Grant No. 61874080), and the National Postdoctoral Program for Innovative Talents (Grant No. BX20190263)

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References

[1]	Wort C J H, Balmer R S 2008 Mater. Today 11 22
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Cited By

图 1 器件制备流程图　(a)氢等离子体处理; (b) Au沉积; (c)隔离工艺; (d)栅窗口光刻; (e) Au腐蚀; (f) Al沉积及剥离, 右上角为器件俯视图显微照片

Figure 1. Schematic diagram of the device fabrication process: (a) Hydrogen plasma treatment; (b) gold deposition; (c) device isolation; (d) gate window photolithography; (e)wet etching of gold; (f) aluminum deposition and lifting off. The inset at the upper right corner of (f) is the top view of the device.

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图 2 氢等离子体处理前的金刚石表面形貌　(a) (110)面; (b) (111)面

Figure 2. Surface morphology of the diamond before hydrogen plasma treatment: (a) (110) plane; (b) (111) plane.

DownLoad: Full-Size Img PowerPoint

图 3 氢等离子体处理后的金刚石表面形貌　(a) (110)面; (b) (111)面

Figure 3. Surface morphology of the diamond after hydrogen plasma treatment: (a) (110) plane; (b) (111) plane.

DownLoad: Full-Size Img PowerPoint

图 4 不同表面金刚石的 (a) Raman光谱图, (b) PL光谱

Figure 4. (a) Raman spectra and (b) photoluminescence (PL) spectra of the diamond plates with different surface orientations.

DownLoad: Full-Size Img PowerPoint

图 5 栅-源二极管的I-V特性以及正向偏置下的拟合结果　(a) A器件I-V特性; (b) 图(a)部分栅压区的拟合结果; (c) B器件I-V特性; (d) 图(c)部分栅压区的拟合结果

Figure 5. Current-voltage characteristics of the gate-source diodes and fitting results at the forward bias: (a) and (b) are for device A; (c) and (d) are for device B.

DownLoad: Full-Size Img PowerPoint

图 6 输出特性　(a)器件A; (b)器件B

Figure 6. Output characteristics: (a) Device A; (b) device B.

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图 7 转移特性　(a)器件A; (b)器件B

Figure 7. Transfer and transconductance characteristics: (a) Device A; (b) device B.

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图 8 氢终端金刚石场效应管输出电流(a)和最大跨导(b)随栅长的变化(数据来自文献[26,27,29—33]), MOSFET器件给出了栅金属和栅介质

Figure 8. Summary of the reported (a) I_Dmax and (b) maximum transconductance of hydrogen-terminated diamond FETs dependent on the gate length^{[26,27,29-33]}. The gate metal and gate dielectric are given for MOSFETs.

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图 9 栅源二极管的C-V特性以及计算出的沟道载流子浓度随V_GS的变化　(a)器件A; (b)器件B

Figure 9. Capacitance-voltage characteristics of the gate-source diode and the calculated hole density in the gated channel as a function of V_GS: (a) Device A; (b) device B.

DownLoad: Full-Size Img PowerPoint

[1]	Wort C J H, Balmer R S 2008 Mater. Today 11 22
[2]	Baliga B J 1989 IEEE Electron Dev. Lett. 10 455 Google Scholar
[3]	Zhang C M, Zheng Y B, Jiang Z G, Lv X Y, Hou X, Hu S, Liu W J 2010 Chin. Phys. Lett. 27 088103 Google Scholar
[4]	房超, 贾晓鹏, 颜丙敏, 陈宁, 李亚东, 陈良超, 郭龙锁, 马红安 2015 物理学报 64 228101 Google Scholar Fang C, Jia X P, Yan B M, Chen N, Li Y D, Chen L C, Guo L S, Ma H A 2015 Acta. Phys. Sin. 64 228101 Google Scholar
[5]	Kasu M, Ueda K, Ye H, Yamauchi Y, Sasaki S, Makimoto T 2005 Electron. Lett. 41 1249 Google Scholar
[6]	Kasu M, Ueda K, Ye H, Yamauchi Y, Sasaki S, Makimoto T 2006 Diamond Relat. Mater. 15 783 Google Scholar
[7]	Hirama K, Sato H, Harada Y, Yamamoto H, Kasu M 2012 IEEE Electron Dev. Lett. 33 1111 Google Scholar
[8]	Kawarada H, Tsuboi H, Naruo T, Yamada T, Xu D, Daicho A, Saito T, Hiraiwa A 2014 Appl. Phys. Lett. 105 013510 Google Scholar
[9]	Kawarada H 2012 Jpn. J. Appl. Phys 51 090111 Google Scholar
[10]	任泽阳, 张金风, 张进成, 许晟瑞, 张春福, 全汝岱, 郝跃 2017 物理学报 66 208101 Google Scholar Ren Z Y, Zhang J F, Zhang J C, Xu S R, Zhang C F, Quan R D, Hao Y 2017 Acta. Phys. Sin. 66 208101 Google Scholar
[11]	张金风, 杨鹏志, 任泽阳, 张进成, 许晟瑞, 张春福, 徐雷, 郝跃 2018 物理学报 67 068101 Google Scholar Zhang J F, Yang P Z, Ren Z Y, Zhang J C, Xu S R, Zhang C F, Xu L, Hao Y 2018 Acta. Phys. Sin. 67 068101 Google Scholar
[12]	Ren Z Y, Zhang J F, Zhang J C, Zhang C F, Xu S R, Li Y, Hao Y 2017 IEEE Electron Dev. Lett. 38 786 Google Scholar
[13]	Ren Z Y, Zhang J F, Zhang J C, Zhang C F, Chen D Z, Yang P Z, Li Y, Hao Y 2017 IEEE Electron Dev. Lett. 38 1302 Google Scholar
[14]	Hirama K, Sato H, Harada Y, Yamamoto H, Kasu M 2012 Jpn. J. Appl. Phys. 51 080112
[15]	Yu X X, Zhou J J, Qi C J, Cao Z Y, Kong Y C, Chen T S 2018 IEEE Electron Dev. Lett. 39 1373 Google Scholar
[16]	Ueda K, Kasu M, Yamauchi Y, Makimoto T, Schwitters M, Twitchen D J, Scarsbrook G A, Coe S E 2006 IEEE Electron Dev. Lett. 27 570 Google Scholar
[17]	Imanishi S, Horikawa K, Qi N, Okubo S, Kageura T, Hiraiwa A, Kawarada H 2018 IEEE Electron Dev. Lett. 40 279
[18]	Wang J J, He Z Z, Yu C, Song X B, Xu P, Zhang P W, Guo H, Liu J L, Li C M, Cai S J, Feng Z H 2014 Diamond Relat. Mater. 43 43 Google Scholar
[19]	Umezawa H, Tatsumi N, Kato Y, Shikata S I 2013 Diamond Relat. Mater. 40 56 Google Scholar
[20]	Achard J, Tallaire A, Sussmann R, Silva F, Gicquel A 2005 J. Cryst. Growth. 284 396 Google Scholar
[21]	Tallaire A, Achard J, Secroun A, Gryse O D, Weerdt F D, Barjon J, Silva F, Gicquel A 2006 J. Cryst. Growth. 291 533 Google Scholar
[22]	Rezek B, Sauerer C, Nebel C E, Stutzmann M, Ristein J, Ley L, Snidero E, Bergonzo P 2003 Appl. Phys. Lett. 82 2266 Google Scholar
[23]	Kubovic M, Kasu M, Yamauchi Y, Ueda K, Kageshima H 2009 Diamond Relat. Mater. 18 796 Google Scholar
[24]	Kasu M, Ueda K, Yamauchi Y, Makimoto T 2007 Appl. Phys. Lett. 90 043509 Google Scholar
[25]	Kasu M, Ueda K, Kageshima H, Yamauchi Y 2008 Diamond Relat. Mater. 17 741 Google Scholar
[26]	Wang Y F, Chang X H, Zhang C F, Fu J, Fan S W, Bu R, Zhang J W, Wang W, Wang H X, Wang J J 2018 Diamond Relat. Mater. 81 113 Google Scholar
[27]	Liu J W, Liao M Y, Lmura M, Koide Y 2013 Appl. Phys. Lett. 103 092905 Google Scholar
[28]	Nissan C Y, Shappir J, Frohman B D 1985 Solid-State Electron. 28 717 Google Scholar
[29]	Liu J W, Koide Y 2017 Methods. Mol. Biol 15 217
[30]	Wang Y F, Wang W, Chang X, Fu J, Liu Z, Zhao D, Shao G, Fan S, Bu R, Zhang J, Wang H X 2019 Sci. Rep. 9 5192 Google Scholar
[31]	Saha N C, Kasu M 2019 Diamond Relat. Mater. 92 81 Google Scholar
[32]	Ren Z Y, Zhang J F, Zhang J C, Zhang C F, Yang P Z, Chen D Z, Li Y, Hao Y 2018 J. Semicond. 39 72
[33]	Kasu M, Kubovic M, Aleksov A, Teofilov N, Sauer R, Kohn E, Makimoto T 2004 Jpn. J. Appl. Phys. 43 L975 Google Scholar
[34]	Kasu M 2017 Jpn. J. Appl. Phys. 56 01AA01 Google Scholar

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