| [1] |
Wang Jing-Li, Dong Xian-Chao, Yin Liang, Yang Zhi-Xiong, Wan Hong-Dan, Chen He-Ming, Zhong Kai. Vanadium dioxide based terahertz dual-frequency multi-function coding metasurface. Acta Physica Sinica,
2023, 72(9): 098101.
doi: 10.7498/aps.72.20222321
|
| [2] |
Tian Jin-Peng, Wang Shuo-Pei, Shi Dong-Xia, Zhang Guang-Yu. Vertical short-channel MoS2 field-effect transistors. Acta Physica Sinica,
2022, 71(21): 218502.
doi: 10.7498/aps.71.20220738
|
| [3] |
Yan Zhong-Bao, Sun Shuai, Zhang Shuai, Zhang Yao, Shi Wei, Sheng Quan, Shi Chao-Du, Zhang Jun-Xiang, Zhang Gui-Zhong, Yao Jian-Quan. Effect of phase transition of vanadium dioxide on resonance characteristics of terahertz anti-resonant fiber and its applications. Acta Physica Sinica,
2021, 70(16): 168701.
doi: 10.7498/aps.70.20210084
|
| [4] |
Li Jia-Hui, Zhang Ya-Ting, Li Ji-Ning, Li Jie, Li Ji-Tao, Zheng Cheng-Long, Yang Yue, Huang Jin, Ma Zhen-Zhen, Ma Cheng-Qi, Hao Xuan-Ruo, Yao Jian-Quan. Terahertz coding metasurface based vanadium dioxide. Acta Physica Sinica,
2020, 69(22): 228101.
doi: 10.7498/aps.69.20200891
|
| [5] |
Sun Xiao-Ning, Qu Zhao-Ming, Wang Qing-Guo, Yuan Yang. Voltage induced phase transition of polyethene glycol composite film filled with VO2 nanoparticles. Acta Physica Sinica,
2020, 69(24): 247201.
doi: 10.7498/aps.69.20200834
|
| [6] |
Yang Pei-Di, Ouyang Chen, Hong Tian-Shu, Zhang Wei-Hao, Miao Jun-Gang, Wu Xiao-Jun. Study of phase transition of single crystal and polycrystalline vanadium dioxide nanofilms by using continuous laser pump-terahertz probe technique. Acta Physica Sinica,
2020, 69(20): 204205.
doi: 10.7498/aps.69.20201188
|
| [7] |
Zhang Jin-Feng, Xu Jia-Min, Ren Ze-Yang, He Qi, Xu Sheng-Rui, Zhang Chun-Fu, Zhang Jin-Cheng, Hao Yue. Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations. Acta Physica Sinica,
2020, 69(2): 028101.
doi: 10.7498/aps.69.20191013
|
| [8] |
Meng Xian-Cheng, Tian He, An Xia, Yuan Shuo, Fan Chao, Wang Meng-Jun, Zheng Hong-Xing. Field effect transistor photodetector based on two dimensional SnSe2. Acta Physica Sinica,
2020, 69(13): 137801.
doi: 10.7498/aps.69.20191960
|
| [9] |
Zhang Meng, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei. Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2020, 69(17): 177102.
doi: 10.7498/aps.69.20200497
|
| [10] |
Sun Xiao-Ning, Qu Zhao-Ming, Wang Qing-Guo, Yuan Yang, Liu Shang-He. Research progress of metal-insulator phase transition in VO2 induced by electric field. Acta Physica Sinica,
2019, 68(10): 107201.
doi: 10.7498/aps.68.20190136
|
| [11] |
Zheng Jia-Jin, Wang Ya-Ru, Yu Ke-Han, Xu Xiang-Xing, Sheng Xue-Xi, Hu Er-Tao, Wei Wei. Field effect transistor photodetector based on graphene and perovskite quantum dots. Acta Physica Sinica,
2018, 67(11): 118502.
doi: 10.7498/aps.67.20180129
|
| [12] |
Zhang Jin-Feng, Yang Peng-Zhi, Ren Ze-Yang, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Xu Lei, Hao Yue. Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor. Acta Physica Sinica,
2018, 67(6): 068101.
doi: 10.7498/aps.67.20171965
|
| [13] |
Wang Ze-Lin, Zhang Zhen-Hua, Zhao Zhe, Shao Rui-Wen, Sui Man-Ling. Mechanism of electrically driven metal-insulator phase transition in vanadium dioxide nanowires. Acta Physica Sinica,
2018, 67(17): 177201.
doi: 10.7498/aps.67.20180835
|
| [14] |
Gu Yan-Ni, Wu Xiao-Shan. Oxygen vacancy induced band gap narrowing of the low-temperature vanadium dioxide phase. Acta Physica Sinica,
2017, 66(16): 163102.
doi: 10.7498/aps.66.163102
|
| [15] |
Ren Ze-Yang, Zhang Jin-Feng, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Quan Ru-Dai, Hao Yue. Characteristics of H-terminated single crystalline diamond field effect transistors. Acta Physica Sinica,
2017, 66(20): 208101.
doi: 10.7498/aps.66.208101
|
| [16] |
Luo Ming-Hai, Xu Ma-Ji, Huang Qi-Wei, Li Pai, He Yun-Bin. Research progress of metal-insulator phase transition mechanism in VO2. Acta Physica Sinica,
2016, 65(4): 047201.
doi: 10.7498/aps.65.047201
|
| [17] |
Liu Chang, Lu Ji-Wu, Wu Wang-Ran, Tang Xiao-Yu, Zhang Rui, Yu Wen-Jie, Wang Xi, Zhao Yi. Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFET. Acta Physica Sinica,
2015, 64(16): 167305.
doi: 10.7498/aps.64.167305
|
| [18] |
Xiong Ying, Wen Qi-Ye, Tian Wei, Mao Qi, Chen Zhi, Yang Qing-Hui, Jing Yu-Lan. Researches on the electrical properties of vanadium oxide thin films on Si substrates. Acta Physica Sinica,
2015, 64(1): 017102.
doi: 10.7498/aps.64.017102
|
| [19] |
Zhang Jun-Yan, Deng Tian-Song, Shen Xin, Zhu Kong-Tao, Zhang Qi-Feng, Wu Jin-Lei. Electrical and optical properties of single As-doped ZnO nanowire field effect transistors. Acta Physica Sinica,
2009, 58(6): 4156-4161.
doi: 10.7498/aps.58.4156
|
| [20] |
Wang Li-Xia, Li Jian-Ping, He Xiu-Li, Gao Xiao-Guang. Fabrication of vanadium dioxide films at low temperature and researches on properties of the films. Acta Physica Sinica,
2006, 55(6): 2846-2851.
doi: 10.7498/aps.55.2846
|
下载:
