Ultra-wide bandgap semiconductor of β-Ga<sub>2</sub>O<sub>3</sub> and its research progress of deep ultraviolet transparent electrode and  solar-blind photodetector

Guo Dao-You; Li Pei-Gang; Chen Zheng-Wei; Wu Zhen-Ping; Tang Wei-Hua

doi:10.7498/aps.68.20181845

Abstract

Gallium oxide (Ga₂O₃), with a bandgap of about 4.9 eV, is a new type of ultra-wide bandgap semiconductor material. The Ga₂O₃ can crystallize into five different phases, i.e. α, β, γ, δ, and ε-phase. Among them, the monoclinic β-Ga₂O₃ (space group: C2/m) with the lattice parameters of a = 12.23 Å, b = 3.04 Å, c = 5.80 Å, and β = 103.7° has been recognized as the most stable phase. The β-Ga₂O₃ can be grown in bulk form from edge-defined film-fed growth with a low-cost method. With a high theoretical breakdown electrical field (8 MV/cm) and large Baliga’s figure of merit, the β-Ga₂O₃ is a potential candidate material for next-generation high-power electronics (including diode and field effect transistor) and extreme environment electronics [high temperature, high radiation, and high voltage (low power) switching]. Due to a high transmittance to the deep ultraviolet-visible light with a wavelength longer than 253 nm, the β-Ga₂O₃ is a natural material for solar-blind ultraviolet detection and deep-ultraviolet transparent conductive electrode. In this paper, the crystal structure, physical properties and device applications of Ga₂O₃ material are introduced. And the latest research progress of β-Ga₂O₃ in deep ultraviolet transparent conductive electrode and solar-blind ultraviolet photodetector are reviewed. Although Sn doped Ga₂O₃ thin film has a conductivity of up to 32.3 S/cm and a transmittance greater than 88%, there is still a long way to go for commercial transparent conductive electrode. At the same time, the development history of β-Ga₂O₃ solar-blind ultraviolet photodetectors based on material type (nanometer, single crystal and thin film) is described in chronological order. The photodetector based on quasi-two-dimensional β-Ga₂O₃ flakes shows the highest responsivity (1.8 × 10⁵ A/W). The photodetector based on ZnO/Ga₂O₃ core/shell micron-wire has a best comprehensive performance, which exhibits a responsivity of 1.3 × 10³ A/W and a response time ranging from 20 ${\text{μ}}{\rm{s}}$ to 254 nm light at –6 V. We look forward to applying the β-Ga₂O₃ based solar-blind ultraviolet photodetectors to military (such as: missile early warning and tracking, ultraviolet communication, harbor fog navigation, and so on) and civilian fields (such as ozone hole monitoring, disinfection and sterilization ultraviolet intensity monitoring, high voltage corona detection, forest fire ultraviolet monitoring, and so on).

Keywords:

Authors and contacts

1.
Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
2.
Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
3.
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

Corresponding author: Tang Wei-Hua, whtang@bupt.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61704153, 51572241, 61774019, 51572033) and Beijing Municipal Commission of Science and Technology, China (Grant No. SX2018-04).

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图 1 Ga₂O₃几个同分异构体的晶体结构

Figure 1. Crystal structures of several isomers of Ga₂O₃

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图 2 Ga₂O₃各同分异构体的相互转换关系^[4]

Figure 2. Interconversion relation of Ga₂O₃ isomers^[4]

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图 3 β-Ga₂O₃的晶体结构及晶格常数^[21−23]

Figure 3. Crystal structure and lattice constant of β-Ga₂O₃^[21−23]

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图 4 β-Ga₂O₃材料具有的物理性质及其对应的器件应用

Figure 4. Physical properties and device applications of β-Ga₂O₃ material

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图 5 (a)在不同温度下制备获得的Sn掺杂β-Ga₂O₃薄膜的透过率^[75]; (b) Sn掺杂β-Ga₂O₃薄膜的导电率随沉积温度的变化关系^[24]

Figure 5. (a) The transmittance of Sn-doped-Ga₂O₃ thin films prepared at different temperatures^[75]; (b) the relationship between the conductivity of Sn doped -Ga₂O₃ thin films and the deposition temperature^[24]

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图 6 Sn掺杂Ga₂O₃薄膜的透过率和带隙(a)^[81]及电阻率(b)^[82]随Sn掺杂浓度的变化关系

Figure 6. The relationship of the transmittance (a)^[81], the band gap (a)^[81], the resistivity (b)^[82] with Sn different doping concentration in Sn-doped Ga₂O₃ thin films

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图 7 ITO与Ga₂O₃:ITO薄膜性能对比　(a)光输出功率–电流–电压特征曲线; (b)近紫外LED的电致发光光谱^[85]

Figure 7. (a) Current versus light output power and forward voltage (L-I-V) characteristic curves and (b) typical electroluminescence spectra measured for near-ultraviolet LEDs with Ga₂O₃:ITO and ITO transparent conducting electrodes; the inset shows top-view SEM image of near-ultraviolet^[85]

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图 8 Au-Ga₂O₃纳米线-Au光电探测器　(a)黑暗情况下的I–V特性曲线及其器件结构SEM图(插图); (b)–8 V偏压下对254 nm光的I–t响应特性曲线^[91]

Figure 8. Au-Ga₂O₃ nanowire-Au photodetector: (a) I-V characteristic curve of the detector in dark. The inset of is a typical SEM image of the device, the scale bar: 200 nm; (b) real-time photoresponse of the detector to 254 nm light^[91]

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图 9 β-Ga₂O₃纳米桥光电探测器的日盲光电性质　(a) 器件的结构示意图; (b) 50 V偏压下对254 nm光的I–t响应特性; (c) 黑暗及对365和254 nm光响应的I–V特性曲线; (d) 不同波长的光谱响应特性^[88]

Figure 9. Solar blind photoelectric properties of photodetector based on the bridged β-Ga₂O₃ nanowires: (a) Schematic diagram of the devices; (b) time-dependent photoresponse of the bridged β-Ga₂O₃ nanowires measured in dry air under UVC (～2 mW cm^–2 at 254 nm) illumination with a period of 60 s at a bias voltage of 50 V; (c) I-V characteristics of the bridged β-Ga₂O₃ nanowires in dark (squares), under 365 nm light (triangles), and under 254 nm light (circles). The I-V curve measured under 254 nm light is plotted on a linear scale in the inset; (d) spectral response of the bridged β-Ga₂O₃ nanowires revealing that the device is blind to solar light. The dashed line indicates the lowest wavelength of the solar spectrum on Earth^[88]

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图 10 (a) Ga₂O₃纳米线光电探测器在不同偏压下的光谱响应^[92]; (b)在Cr/Au电极上生长获得的Ga₂O₃纳米线光电探测器结构^[93]; (c)不同温度下生长的Ga₂O₃纳米线对255 nm光的I–t响应曲线^[93]; (d)不同偏压下的光谱响应^[93]

Figure 10. (a) Room-temperature spectral responses of the Ga₂O₃ nanowires photodetector measured with different applied biases^[92]; (b) Ga₂O₃ nanowire photodetector with Cr/Au as electrodes^[93]; (c) transit responses measured from the three fabricated photodetectors grown at different temperatures^[93]; (d) room-temperature spectral responses of the photodetector under different bias^[93]

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图 11 (a)单条Ga₂O₃纳米带光电探测器的SEM图^[94]; (b)不同带宽Ga₂O₃纳米带的光谱响应, 插图为探测器结构^[94]; (c) In掺杂的Ga₂O₃单条纳米带光电探测器的光谱响应^[95]; (d)纯Ga₂O₃和In:Ga₂O₃单条纳米带黑暗情况及在250 nm光照下的I–V曲线^[95]

Figure 11. (a) SEM image of a Ga₂O₃ individual-nanobelt device^[94]; (b) spectral response of the devices (nanobelts with different widths of 800 nm and 1.6 mm) measured at a bias of 15 V. The schematic configuration of a photoconductive measurement is inserted in the top-right corner^[94]; (c) spectral response of an individual In-doped Ga₂O₃ nanobelt photodetector. The inset is a typical SEM image of an individual In-doped Ga₂O₃ nanobelt device^[95]; (d) logarithmic plot of I-V curves of the individual Ga₂O₃ and In-doped Ga₂O₃ nanobelt photodetector under illumination with the 250 nm wavelength light and in dark conditions^[95]

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图 12 (a) Ga₂O₃纳米花的SEM图; (b) Ga₂O₃纳米花对254 nm光的I–t响应曲线^[97]

Figure 12. (a) SEM image of Ga₂O₃ nanoflowers; (b) I-t response curve of Ga₂O₃ nanoflowers to 254 nm light^[97]

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图 13 ZnO/Ga₂O₃核/壳结构的日盲紫外探测器　(a)器件示意图; (b)黑暗和254 nm光照下的I–V特征曲线; (c)–6 V偏压下的光谱响应^[100]; (d)0 V偏压下的光谱响应; (e)光电流衰减^[101]. Au/Ga₂O₃纳米线Schottky型垂直结构的光电探测器 (f)器件示意图; (g)光谱响应; (h)光电流衰减^[102]

Figure 13. Solar-blind ultraviolet photodetector based on Single ZnO-Ga₂O₃ core-shell microwire ZnO/Ga₂O₃ core-shell: (a) Device schematic diagram; (b)I-V characteristic curve in dark and under 254 nm light; (c) spectral response of the device at −6 V bias^[100]; (d) the photoresponse spectrum of the device at 0 V; (e) the time response under the excitation of 266 nm pulse laser at 0 V^[101]. Au/Ga₂O₃ nanowire Schottky vertical structure photodetector: (f) device schematic diagram; (g) spectral responses of the device at zero bias and under reverse bias of 10 V. Inset shows the responsivity of photodetectors at the wavelength of 254 nm as a function of reverse bias; (h) decay edge of the current response at reverse bias of 10 V^[102].

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图 14 基于β-Ga₂O₃薄片的日盲紫外探测器　(a)机械剥离获得β-Ga₂O₃微米薄片及器件制作流程示意图; (b)器件的光学照片; (c)不同波长光照下的器件的I–t响应曲线; (d) 光谱响应曲线^[103]; (e) β-Ga₂O₃微米薄片的反应离子刻蚀减薄^[104]; (f) Ni/Au电极与β-Ga₂O₃薄片构成的MSM结构肖特基结日盲紫外探测器在不用波长下的I–V曲线; (g)能带结构示意图^[105]; (h), (i)石墨烯电极与β-Ga₂O₃薄片构成的MSM结构日盲紫外探测器的SEM图^[106]

Figure 14. Solar-blind ultraviolet photodetector based on β-Ga₂O₃ flake: (a) Schematic of the entire exfoliated β-Ga₂O₃ flake based photodetector fabrication process; (b) optical image of the fabricated photodetector; (c) time-dependent photoresponse of the fabricated photodetector under various illumination conditions (254, 365, 532 and 650 nm light exposure); (d) responsivity as a function of wavelength^[103]; (e) the reactive ion etching assisted thinning of a β-Ga₂O₃ flake^[104]; (f) the I-V curve; (g) energy band structure diagram of the schottky junction MSM structure solar-blind ultraviolet photodetector based on Ni/Au electrodes and β-Ga₂O₃ flake under different wavelengths^[105]; (h), (i) the SEM image of the MSM structure solar-blind ultraviolet photodetector based on graphene electrode and β-Ga₂O₃ flake^[106]

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图 15 垂直结构肖特基型β-Ga₂O₃单晶日盲紫外探测器　(a)制作过程^[109]; (b)光谱响应^[109]; (c)实物图^[89]; (d)瞬态光响应^[89]

Figure 15. Vertical solar-blind deep-ultraviolet schottky photodetectors based onβ-Ga₂O₃ substrates: (a) Fabrication process for photodetector^[109]; (b) spectral responser^[109]; (c) photograph of the flame detector. The dashed circles are on the edges of the transparent electrodes^[89]; (d) transient response of the detector^[89]

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图 16 (a) β-Ga₂O₃单晶与Au电极在不同温度下退火后的I–V曲线^[110]; (b)未退火和400℃下退火后Au/β-Ga₂O₃单晶肖特基型光电探测器的光谱响应^[110]; (c)在β-Ga₂O₃单晶上采用溶胶凝胶法制备高绝缘β-Ga₂O₃薄膜并与Au电极构成的光电探测器^[111]; (d)有无高绝缘β-Ga₂O₃薄膜层的光谱响应对比图^[111]

Figure 16. (a) Dark I-V characteristics of the Au-Ga₂O₃ Schottky photodiode annealed at various temperatures. The inset shows the device configuration^[110]; (b) spectral response of the Au-Ga₂O₃ Schottky photodiode before and after annealing at 400℃. The inset shows the reverse I-V characteristics of the photodiode annealed at 400℃ taken in dark and under illumination with 240 nm light^[110]; (c) schematic structure of a photodiode composed of a Au Schottky contact and a β-Ga₂O₃ single-crystal substrate with a sol-gel prepared cap layer.^[111]; (d) spectral response of Ga₂O₃ photodiodes with and without a cap layer at reverse and forward biases of 3 V. The inset shows the incident light intensity dependence of the photocurrent at forward and reverse biases of 3 V under illumination with 250 nm light^[111]

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图 17 石墨烯/β-Ga₂O₃单晶日盲紫外探测器^[112]　(a)器件结构示意图; (b)黑暗及365 nm光照下的I–V曲线; (c)光谱响应; (d)能带结构示意图

Figure 17. Solar-blind ultraviolet photodetectors based on graphene/β-Ga₂O₃ single crystal heterojunction^[112]: (a) Schematic diagram of device structure; (b) I-V characteristics of the photodetectors in dark and under 365 nm light irradiation; (c) normalized spectral selectivity; (b) energy band diagram at forward bias voltage

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图 18 (a) Ga₂O₃薄膜的面内XRD图; (b) Ga₂O₃薄膜在黑暗及不同光照下的I–V曲线^[90]

Figure 18. (a) In-plane XRD measurement results for the Ga₂O₃ film; (b) I-V characteristics of the Ga₂O₃ film photodetector in the dark, under black light irradiation, and under low-pressure mercury lamp irradiation^[90]

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图 19 (a) Ga₂O₃/GaN光电探测器结构; (b) Ga₂O₃/GaN光电探测器在不同偏压下的光谱响应^[117]; (c) Ga₂O₃/AlGaN/GaN光电探测器结构; (d) Ga₂O₃/AlGaN/GaN光电探测器在不同偏压下的光谱响应^[118]; (e) Ga₂O₃/InGaN/GaN光电探测器结构; (f) Ga₂O₃/InGaN/GaN光电探测器在不同偏压下的光谱响应^[119]; (g)有无Au纳米颗粒与Ga₂O₃界面形成的能带结构示意图; (h) Au纳米颗粒/Ga₂O₃光电探测器在不同偏压下的光谱响应^[120]

Figure 19. Schematic diagram (a) and spectral responses under different bias (b) of Ga₂O₃/GaN photodetector^[117]; Schematic diagram (c) and spectral responses under different bias (d) of Ga₂O₃/AlGaN/GaN photodetector^[118]; Schematic diagram (e) and spectral responses under different bias (f) of Ga₂O₃/InGaN/GaN photodetector^[119]; Energy band diagram of area near the surface of β-Ga₂O₃ and Au in the dark (g), spectral responses under different bias of Ga₂O₃/GaN-based metal-semiconductor-metal photodetectors covered with Au nanoparticles (h)^[120]

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图 20 (a) Ga₂O₃/SiC光电探测器结构; (b) Ga₂O₃/SiC光电探测器在2 V反偏压下的光谱响应^[121]

Figure 20. Schematic diagram (a) and spectral responses under 2 V reverse bias (b) of SiC/Ga₂O₃ photodetector^[121]

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图 21 (a) Ga₂O₃薄膜MSM结构日盲紫外探测器的结构示意图^[123]; (b) MSM结构中Ga₂O₃薄膜厚度对探测器光暗比的影响^[124]; (c), (d) MSM结构阵列探测器^[125]; (e)氧气氛退火处理构成的肖特基结与未退火欧姆接触MSM结构探测器的I–t曲线^[126]. 不同元素掺杂Ga₂O₃薄膜MSM结构探测器的I–t曲线 (f) Mg掺杂^[128]; (g) Mn掺杂^[127]; (h) Zn掺杂^[129]; (i) Sn掺杂^[130]

Figure 21. (a) Schematic diagram of the β-Ga₂O₃ thin film MSM structure photodetector^[123; (b) the effect of Ga₂O₃ film thickness on light-dark ratio of the MSM structure photodetector^[124]; (c), (d) MSM structure arrays photodetector^[125]; (e)I-t curves of the β-Ga₂O₃ thin films MSM structure photodetector with unannealed (Ohmic-type up) and annealed treatment in O₂ atmosphere (Schottky-type, down), respectively^[126]. I-t curves of the MSM structure photodetector based on β-Ga₂O₃ thin films doped with different element: (f) Mg doped^[128]; (g) Mn doped^[127]; (h) Zn doped^[129]; (i) Sn doped^[130]

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图 22 石墨烯/Ga₂O₃/石墨烯垂直结构日盲紫外探测器的结构示意图^[138](a)及其不同偏压下对254 nm紫外光的响应度(b)^[138]; 纯Ga₂O₃及表面附着有Au纳米颗粒Ga₂O₃薄膜的紫外可见吸收(c)^[139]和不同光照下的I–V曲线(d)^[139]; 引入Al₂O₃薄层生长获得的Ga₂O₃薄膜/纳米线SEM图(e)^[140]和不同光照下的I–V曲线(f)^[140]

Figure 22. Schematic diagram (a) ^[138] and photoresponses to 254 nm ultraviolet light under different bias (b) ^[138] of graphene/Ga₂O₃/graphene vertical structure photodetector; UV-vis absorbance spectrum (c) ^[139] and I-V cures under the different wavelength light illumination (d) ^[139] of the bare Ga₂O₃ thin film and Au nanoparticles/Ga₂O₃ composite thin film; SEM image (e) and I-V cures under the different wavelength light illumination (f) ^[140] of Ga₂O₃ thin film/nanowire grown induced by Al₂O₃ thin layer^[140]

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图 23 Ga₂O₃/NSTO异质结自供电探测器的结构示意图(a)^[142] 、黑暗及254 nm不同光强下的I–V曲线(b)^[142]和异质结界面处光生载流子输运的能带结构示意图(c)^[142]; Ga₂O₃/P-Si PN结探测器的结构示意图(d)^[143]; Ga₂O₃/Ga:ZnO异质结探测器的整流特性及结构示意图(e)^[145]和光谱响应(f)^[145]; Ga₂O₃/GaN PN结探测器的结构示意图(g)^[146]和黑暗及不同波长光照下的I–V曲线(h)^[146]; Sn:Ga₂O₃/GaN PN结探测器的光谱响应(i)^[144]和不同波长光照下的I–t曲线(j)^[147]; Ga₂O₃/SiC/P-Si PIN结(k)^[148]和石墨烯/Ga₂O₃/SiC探测器的结构示意图(l)^[149]

Figure 23. Schematic diagram (a) ^[142], I-V cures in dark and under 254 nm with different light intensity illumination (b) ^[142], and schematic energy band diagrams (c) ^[142] of the β-Ga₂O₃/NSTO heterojunction self-powered photodetector; Schematic diagram of Ga₂O₃/P-Si PN junction detector (d) ^[143]; Rectifier features (e), schematic diagram (e) and spectral response (f) of the Ga₂O₃/Ga:ZnO heterojunction photodetector^[145]; Schematic diagram (g) ^[145], I-V cures in dark and under the different wavelength light illumination (h) ^[146]; Spectral response (i) and I-t cures under the different wavelength light illumination (j) of the Sn:Ga₂O₃/GaN PN junction photodetector^[145]; Schematic diagram of Ga₂O₃/SiC/P-Si PIN junction photodetector (k) ^[148]and graphene/Ga₂O₃/SiC photodetector (l)^[149]

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图 24 a-GaO_x非晶薄膜和β-Ga₂O₃薄膜日盲紫外探测器^[159]　(a) MSM结构示意图; (b)光谱响应; (c)能带结构示意图

Figure 24. Solar-blind ultraviolet photodetector based on a-GaO_x amorphous film and β-Ga₂O₃ film^[159]: (a) MSM structure diagram; (b) spectral response; (c) energy band structure diagram

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图 25 MSM结构日盲紫外探测器　(a) MSM结构示意图^[160]; (b) Ga₂O₃单晶和薄膜的光谱响应对比^[160]; (c) MSM结构^[162]; (d) Ga₂O₃薄膜不同气氛退火的光谱响应对比^[161]; (e)不同氧压下生长的Ga₂O₃薄膜的光谱响应对比^[162]; (f)不同In掺杂的Ga₂O₃薄膜的光谱响应对比图^[163]

Figure 25. MSM structure solar-blind ultraviolet photodetector: (a) Schematic diagram of MSM structure^[160]; (b) spectral response comparison of Ga₂O₃ single crystal and thin film^[160]; (c) MSM structure^[162]; (d) spectral response comparison of Ga₂O₃ thin films annealed in different atmospheres^[161]; (e) spectral response comparison of Ga₂O₃ thin films grown under different oxygen pressures^[162]; (f) spectral response comparison of Ga₂O₃ thin films doped with different concentrations of In elements^[163]

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图 26 a-Ga₂O₃非晶薄膜日盲紫外探测器^[169]　(a)以石英为衬底的器件结构示意图; (b)光谱响应; (c)光衰减测试; (d)以柔性为衬底的器件结构示意图

Figure 26. Solar-blind ultraviolet photodetector based on a-Ga₂O₃ amorphous film^[169]: (a) Schematic diagram of device structure with quartz substrate; (b) spectral response; (c) the decay of photoresponse; (d) schematic diagram of device structure with flexible substrate

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图 27 a-GaO_x非晶薄膜日盲紫外探测器^[171]　(a)以玻璃为衬底的器件结构示意图; (b)黑暗和253 nm光照下的I–V曲线; 以聚酰亚胺为衬底的器件结构示意图(c)及黑暗和253 nm光照下的I–V曲线(d)

Figure 27. Solar-blind ultraviolet photodetector based on a-Ga₂O₃ amorphous film^[171]: Schematic diagram of device structure with glass substrate (a) and I-V cures in dark and under the illumination of 253 nm light (b); Schematic diagram of device structure with polyimide substrate (c) and I-V cures in dark and under the illumination of 253 nm light (d)

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图 28 α-Ga₂O₃/ZnO异质结日盲紫外探测器^[172]　(a)光谱响应; (b)增益随偏压的变化; (c)瞬态光响应特性; (d)能带结构及器件结构示意图

Figure 28. Solar-blind ultraviolet photodetector based on α-Ga₂O₃/ZnO heterojunction^[172] : (a) Spectral response; (b) variation of gain with bias; (c) transient photoresponse characteristics; (d) schematic diagram of energy band structure and device structure

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图 29 以N₂O为反应气体获得的β-Ga₂O₃薄膜日盲紫外探测器　(a)生长原理示意图^[176]; (b)黑暗和255 nm光照下的I–V曲线及MSM结构示意图^[176]; (c)光谱响应及不同偏压下的光响应度^[176]; (d)石墨烯/β-Ga₂O₃/GaN器件结构示意图^[177]; (e)光谱响应^[177]; (f)能带结构示意图^[177]

Figure 29. Solar-blind ultraviolet photodetector based on β-Ga₂O₃ thin film grown using N₂O as the reaction gas: (a) Schematic diagram of growth principle^[176]; (b) I-V cures in dark and under 255 nm light illumination, and schematic diagram of MSM structure^[176]; (c) spectral response and photoresponsivity under different bias^[176]; (d) schematic diagram of graphene/β-Ga₂O₃/GaN devices^[177]; (e) spectral response^[177]; (f) energy band structure diagram^[177]

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表 1 β-Ga₂O₃与主流半导体材料的基本物性比较^[25]

Table 1. Comparison of basic physical properties of β-Ga₂O₃ with mainstream semiconductor materials^[25]

材料	Si	GaAs	GaP	4H-SiC	ZnO	GaN	ß-Ga₂O₃	Diamond	AlN	MgO
带隙E_g/eV	1.1	1.43	2.27	3.3	3.35	3.4	4.2—4.9	5.5	6.2	7.8
迁移率${\text{μ}}$/cm²·Vs^–1	1400	8500	350	1000	200	1200	300	2000	135
击穿电场强度E_b/MV·cm^–1	0.3	0.6	1.0	2.5		3.3	8	10	2
相对介电常数ε	11.8	12.9	11.1	9.7	8.7	9	10	5.5	8.5	9.9
导热率/W·cm^–1·K^–1	1.5	0.55	1.1	2.7	0.6	2.1	0.23[010] 0.13[100]	10	3.2
巴利加优值/$\varepsilon {\text{μ}} {E_{\rm{b}}}^3$	1	15		340		870	3444	24664

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表 2 Ga₂O₃基透明导电电极薄膜的各参数指标汇总

Table 2. Parameters and indicators of Ga₂O₃-based transparent conductive electrode films

薄膜类型	电导率/S·cm^–1	面电阻/Ω·sq^–1	载流子浓度/cm^–3	迁移率/cm²·V^–1·s^–1	透过率/%	参考文献
Ga₂O₃薄膜	7.6	-	-	-	85	[80]
Sn:Ga₂O₃薄膜	1	-	1.4 × 1019	0.44	80	[78]
Sn:Ga₂O₃薄膜	8.2	-	-	< 0.44	80	[24]
Sn:Ga₂O₃薄膜	8.3	-	-	12.03	85	[81]
Sn:Ga₂O₃薄膜	32.3	-	2.4 × 1020	0.74	88	[82]
Sn:Ga₂O₃单晶	23.4	-	2.3 × 1018	64.7	85	[79]
(Ga, In)₂O₃薄膜	1.72 × 103	-	5 × 1020	-	> 95	[83]
Ga₂O₃/ITO薄膜	-	164	-	-	> 94	[84]
Ga₂O₃/ITO薄膜	-	49	-	-	93.8	[85]
Ag/Ga₂O₃薄膜	-	42	-	-	91	[86]
Ga₂O₃/Cu/ITO	-	50	-	-	86	[87]

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表 3 几种无线通信的比较

Table 3. Comparison of several wireless communications

通信类别	非视距通信	抗干扰、防窃听	相对运动信号接收	传播距离调控	受环境气候时间影响
无线电通信	是	易被干扰和窃听	是	很差	受环境影响
激光通信	否	抗干扰、防窃听	否	较差	受环境影响
红外通信	否	较易干扰、防窃听	否	较差	受环境时间影响
紫外通信	是	抗干扰、防窃听	是	很好	很小、全天候

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表 4 Ga₂O₃基日盲紫外探测器的各参数指标汇总

Table 4. Summary of parameters and indicators of Ga₂O₃ based solar-blind ultraviolet photodetector.

光电探测器类型	光响应度/A·W^–1	量子效率/%	暗电流/A	光暗比	响应时间/s	参考文献
Ga₂O₃纳米线	-	-	10^–12	≈ 2 × 10³	2.2 × 10^–1	[91]
Ga₂O₃纳米线	-	-	< 10^–12	3 × 10⁴	< 2 × 10^–2	[88]
Ga₂O₃纳米线	8.0 × 10^–4	0.39	2.4 × 10^–10	≈ 10²	-	[92]
Ga₂O₃纳米线	3.4 × 10^–3	1.37	-	≈ 10²	-	[93]
ZnO/Ga₂O₃核壳微米线	1.3 × 10³(–6 V)	-	10^–10	≈ 10⁶	2 × 10^–5	[100]
ZnO/Ga₂O₃核壳微米线	9.7 × 10^–3(0 V)	-	10^–10	≈ 7 × 10²	10^–4	[101]
Ga₂O₃纳米线	6 × 10^–4	-	10^–11	≈ 10²	6.4 × 10^–5	[102]
Ga₂O₃纳米线	3.77 × 10²	2.0 × 10⁵	10^–11	10³	0.21	[107]
石墨烯/Ga₂O₃纳米线	1.85 × 10^-¹	-	10^–5	-	8 × 10^–3	[108]
Ga₂O₃纳米片	3.3	1.6 × 10³	10^–9	10	3 × 10^–2	[96]
Ga₂O₃纳米花(γ)	-	-	10^–9	2.2 × 10²	10^–1	[97]
Ga₂O₃纳米带	3.37 × 10¹	1.67 × 10⁴	10^–13	4.0 × 10²	8.6 × 10¹	[94]
Ga₂O₃纳米带	8.51 × 10²	4.2 × 10³	10^–13	≈ 10³	< 3 × 10^–1	[98]
Ga₂O₃纳米带	1.93 × 10¹	9.4 × 10³	10^–10	≈ 10⁴	< 2 × 10^–2	[99]
In:Ga₂O₃纳米带	5.47 × 10²	2.72 × 10⁵	10^–13	9.1 × 10²	1	[95]
Ga₂O₃微米带	1.8 × 10⁵(–30 V)	8.8 × 10⁵	10^–6	2.57	0.67	[103]
Ga₂O₃微米带	-	-	10^–4	-	1.4	[104]
Ga₂O₃微米带	1.68	-	10^–13	1.9 × 10³	0.53	[105]
石墨烯/Ga₂O₃微米带	2.98 × 10¹	-	10^–13	≈ 10⁴	-	[106]
Ga₂O₃单晶	2.6—8.7	-	10^–10	≈ 10³	-	[109]
Ga₂O₃单晶	3.7 × 10^–2	1.8 × 10¹	10^–10	1.5 × 10⁴	9 × 10^–3	[89]
Ga₂O₃单晶	10³	-	10^–10	≈ 10⁶	-	[110]
Ga₂O₃单晶	4.3	2.1 × 10¹	10^–11	10⁵	-	[111]
石墨烯/Ga₂O₃单晶	3.93 × 10¹	1.96 × 10⁴	10^–6	10³	2.2 × 10²	[112]
Ga₂O₃单晶	5 × 10^–2	-	10^–5	10²	2.4 × 10^–1	[160]
Ga₂O₃单晶	3 × 10^–3	-	10^–8	10¹	1.4 × 10^–1	[113]
Ga₂O₃薄膜	8 × 10^–5	-	-	-	-	[116]
Ga₂O₃薄膜	3.7 × 10^–2	1.8 × 10¹	10^–9	-	-	[90]
Ga₂O₃薄膜	4.53 × 10^–1	> 10²	10^–10	10⁵	-	[117]
Ga₂O₃薄膜	≈ 10¹	-	10^–10	10³	-	[118]
Ga₂O₃薄膜	≈ 10¹	-	10^–7	10³	-	[119]
Ga₂O₃薄膜	≈ 10²	-	10^–10	10²	-	[120]
Ga₂O₃薄膜	-	-	10^–11	10⁵	-	[122]
Ga₂O₃薄膜	7.6 × 10^–1	-	10^–10	6	5 × 10^–2	[152]
Ga₂O₃薄膜	1.7 × 10¹	8.2 × 10³	10^–9	8.5 × 10⁶	-	[153]
Ga₂O₃薄膜	-	-	10^–11	10²	8 × 10^–1	[154]
Ga₂O₃薄膜	9.03 × 10^–1	-	10^–11	10⁵	-	[155]
Ga₂O₃薄膜	2.59 × 10²	7.9 × 10⁴	10^–10	10⁴	4 × 10^–1	[156]
Ga₂O₃薄膜	-	-	10^–7	15	-	[157]
Ga₂O₃薄膜/晶体	1.8	8.7 × 10²	10^–6	36.9	-	[158]
a-GaO_x非晶薄膜	7.0 × 10¹	-	10^–10	1.2 × 10⁵	2 × 10^–2	[159]
Ga₂O₃薄膜	4.2	-	10^–11	1.6 × 10⁴	4 × 10^–2	[159]
Ga₂O₃薄膜	9 × 10^–3	-	10^–5	10¹	1.8 × 10^–1	[160]
Al:Ga₂O₃薄膜	1.5	7.8 × 10²	-	-	-	[164]
Si:Ga₂O₃薄膜	6 × 10¹	3 × 10⁴	-	9	-	[166]
Si:Ga₂O₃薄膜	3.6 × 10¹	1.75 × 10⁴	-	9	-	[167]
Zn:Ga₂O₃薄膜	2.1 × 10²	-	10^–11	5 × 10⁴	1.4	[168]
Ga₂O₃非晶薄膜	1.9 × 10^–1	-	10^–12	10⁶	1.9 × 10^–5	[169]
Ga₂O₃非晶薄膜	4.5 × 10¹	-	10^–10	10⁴	2.97 × 10^–6	[171]
Ga₂O₃薄膜	1.5	-	10^–9	10³	-	[175]
Ga₂O₃薄膜	0.29	1.34	10^–8	1.6 × 10³	0.1	[173]
Ga₂O₃薄膜	0.11	-	10^–9	3.5 × 10³	0.45	[174]
Ga₂O₃薄膜	0.14	-	10^–11	1.4 × 10⁶	0.2	[174]
Ga₂O₃薄膜	1.5	-	10^–8	10³	-	[173]
Ga₂O₃薄膜	2.6 × 10¹	-	10^–8	10⁴	0.18	[176]
石墨烯/Ga₂O₃薄膜	1.28 × 10¹	-	10^–8	-	2 × 10^–3	[177]
Ga₂O₃薄膜	9.6 × 10¹	4.76 × 10⁴	10^–6	-	-	[180]
Ga₂O₃薄膜	5.86 × 10^–5	-	10^–9	1.8 × 10¹	0.1	[181]
Ga₂O₃薄膜	1.5 × 10²	7 × 10⁴	10^–11	10⁵	1.3	[165]
Ga₂O₃薄膜	1 × 10^–1	-	10^–8	-	-	[178]
Ga₂O₃薄膜	-	-	10^–8	6	8.6 × 10^–1	[123]
Ga₂O₃薄膜	-	-	10^–9	1.3 × 10¹	6.2 × 10^–1	[126]
Ga₂O₃/Ga/Ga₂O₃薄膜	2.854	-	10^–11	8 × 10⁵	-	[170]
Mn:Ga₂O₃薄膜	7 × 10^–2	3.6 × 10¹	10^–9	6.7 × 10¹	2.8 × 10^–1	[127]
α-Ga₂O₃薄膜	1.5 × 10^–2	7.39	10^–9	3 × 10¹	-	[137]
α-Sn:Ga₂O₃薄膜	9.6 × 10^–2	-	10^–9	1.4 × 10²	1.08	[132]
α-Sn:Ga₂O₃薄膜	-	-	10^–7	4	8.73	[131]
ε-Sn:Ga₂O₃薄膜	6.05 × 10^–3	3.02	10^–9	46.46	-	[133]
β-Sn:Ga₂O₃薄膜	3.61 × 10^–2	-	10^–8	19	1.37	[166]
Zn:Ga₂O₃薄膜	-	-	10^–9	2	1.23	[134]
Er:Ga₂O₃薄膜	-	-	10^–9	2.5	1.6 × 10^–1	[76]
Au NPs/Ga₂O₃薄膜	10²	-	10^–6	> 2 × 10²	-	[139]
Ga₂O₃/p-Si异质结	3.7 × 10²	1.8 × 10⁵	10^–8	9.4 × 10²	1.8	[143]
Ga₂O₃/ZnO异质结	3.5 × 10^–1	1.7 × 10²	10^–10	1.5 × 10¹	6.2 × 10^–1	[144]
Ga₂O₃/NSTO异质结	4.3 × 10¹	2.1 × 10⁴	10^–6	2 × 10¹	7 × 10^–2	[142]
Ga₂O₃/Ga:ZnO异质结	7.6 × 10^–4	-	10^–9	2.6 × 10²	2.7 × 10^–1	[145]
p-Si/i-SiC/n-Ga₂O₃	-	-	10^–8	5.4 × 10³	-	[148]
石墨烯/Ga₂O₃/SiC	1.8 × 10^–1	-	10^–5	6.3 × 10¹	1.7	[149]
石墨烯/Ga₂O₃/石墨烯	9.66	-	10^–9	8.3 × 10¹	0.96	[138]
Ga₂O₃/SiC/Al₂O₃	-	-	10^–9	7.7	-	[141]
Ga₂O₃/Al₂O₃	1.4	-	10^–7	9.04	1.26	[140]
Ga₂O₃/SiC异质结	7 × 10^–2	-	10^–10	-	9 × 10^–3	[121]
Ga₂O₃/GaN异质结	5.4 × 10^–2	-	10^–6	1.5 × 10²	8 × 10^–2	[146]
Sn:Ga₂O₃/GaN异质结	3.05	-	10^–11	10⁴	1.8 × 10^–2	[147]
α-Ga₂O₃/ZnO异质结	1.1 × 10⁴(–40 V)	-	10^–12	-	2.4 × 10^–4	[172]
Ga₂O₃/金刚石异质结	2 × 10^–4	-	10^–9	3.7 × 10¹	-	[179]

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Ultra-wide bandgap semiconductor of β-Ga₂O₃ and its research progress of deep ultraviolet transparent electrode and solar-blind photodetector

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Ultra-wide bandgap semiconductor of β-Ga2O3 and its research progress of deep ultraviolet transparent electrode and solar-blind photodetector

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Corresponding author: Tang Wei-Hua, whtang@bupt.edu.cn

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Ultra-wide bandgap semiconductor of β-Ga₂O₃ and its research progress of deep ultraviolet transparent electrode and solar-blind photodetector