Research progress of inverted planar perovskite solar cells based on nickel oxide as hole transport layer

Wang Pei-Pei; Zhang Chen-Xi; Hu Li-Na; Li Shi-Qi; Ren Wei-Hua; Hao Yu-Ying

doi:10.7498/aps.70.20201896

Abstract

In recent years, organic-inorganic hybrid perovskite solar cells (PSCs) have attracted wide attention due to their high photoelectric conversion efficiency and simple preparation process. Hole transport layer (HTL) is one of the most critical components in PSCs. As a kind of inorganic HTL material, nickel oxide (NiO_x) has been widely used in perovskite solar cells because of its excellent advantages, such as outstanding chemical stability, high carrier mobility, simple methods for its preparation, etc. In this paper, the applications of NiO_x HTL in planar PSCs are systematically summarized from the aspects of the improvment of its structure and photoelectric properties by doping and interface modification. The reasons for affecting the device performances, i.e. fill factor, open-circuit voltage, short-circuit current, photoelectric conversion efficiency, and stability are emphatically analyzed from several aspects, such as energy level matching, hole mobility and crystallinity. In addition, the future development directions of the planar PSCs are prospected.

Keywords:

Authors and contacts

College of Physics and Optoelectronics, Key Lab of Advanced Transducers and Intelligent Control System, Taiyuan University of Technology, Taiyuan 030024, China

Corresponding author: Zhang Chen-Xi, zhangchenxi@tyut.edu.cn ; Hao Yu-Ying, haoyuying@tyut.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 62074108), the Joint Foundation of National Natural Science Foundation of China and Shanxi Coal-Based Low-Carbon Nurturing Project (Grant No. U1710115), the Major Special Projects of Shanxi Province in Science and Technology, China (Grant No. 20201101012), the Platform and Base Special Project of Shanxi, China (Grant No. 201805D131012-3), and the Natural Science Foundation of Shanxi Province, China (Grant No. 201901D211114)

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Cited By

图 1 钙钛矿太阳电池结构示意图

Figure 1. Schematic diagram of PSCs.

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图 2 NiO的立方晶体结构

Figure 2. NiO cubic crystal structure

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图 3 (a) NiO_x和Cu:NiO_x薄膜的紫外光电子能谱^[33]; (b) 基于NiO_x或Cs: NiO_x单空穴器件的J-V曲线, 器件结构为FTO/ NiO_x 或 Cs:NiO_x/MoO₃/Ag^[37]; (c) 不同HTLs的PSCs能级图; (d) 倒置平面PSCs的结构^[38]; (e) F6TCNNQ掺杂分子的化学结构及其与NiO_x的能级排列^[41]; (f) NiO_x与TCNQ, F2TCNQ, F4TCNQ和F2HCNQ的电荷转移和能级分布示意图^[17]

Figure 3. (a) Ultraviolet photoelectron spectra of NiO_x and Cu:NiO_x films^[33]; (b) J-V curves of hole only devices with NiO_x or Cs:NiO_x hole extraction layers, the device structure is FTO/ NiO_x or Cs:NiO_x/MoO₃/Ag^[37]; (c) energy-level diagram of the various layers in the PSCs exhibiting the transfer of photoinduced holes; (d) structural illustration of the inverted planar PSCs^[38]; (e) band alignment of NiO_x and molecular dopants of F6TCNNQ and the chemical structure^[41]; (f) schematic of charge transfer and energy level distribution of NiO_x, TCNQ, F2TCNQ, F4TCNQ, and F2HCNQ^[17].

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图 4 (a) 钙钛矿前驱体在NiO_x薄膜以及甘油处理后NiO_x膜上的接触角^[46]; (b) 三种氨基酸的三维分子模型^[47]; (c) NiO_x和NiO_x/FDA 薄膜上钙钛矿层的SEM图像; (d) NiO_x和NiO_x/FDA 薄膜上钙钛矿层的X射线衍射图^[48]; (e) 基于TPV实验计算的具有不同HTLs器件的载流子复合寿命与光强度关系图^[49]; (f) 在10 kHz下KCl修饰前后NiO_x基PSCs的Mott-Schottky图, 以及基于TPV实验计算的KCl修饰前后NiO_x基PSCs的陷阱态密度谱^[51]

Figure 4. (a) Contact angles of the solvents of perovskite precursor solution on NiO_x: pristine film and with glycerol treatment^[46]; (b) molecular 3D models and formula of three amino acids^[47]; (c) SEM images of the perovskite layer on NiO_x and NiO_x/FDA films; (d) XRD patterns of the perovskite layer on NiO_x and NiO_x/FDA films^[48]; (e) recombination lifetime versus light intensity plots of complete cells having various HTLs, calculated by TPV experiments^[49]; (f) Mott–Schottky plots for the CsFAMA perovskite PSCs with pristine and KCl-modified NiO_x HTLs at 10 kHz and trap density of states (DOS) spectra for CsFAMA perovskite PSCs with pristine and KCl-modified NiO_x HTLs^[51]

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表 1 基于掺杂NiO_x薄膜的PSCs的性能

Table 1. Performances of the PSCs based on doped NiO_x films.

器件结构	电压 V_oc/V	电流 J_sc/(mA·cm^–2)	填充因子FF	光电转换效率PCE/%	掺杂/方法	文献
ITO/F2HCNQ:NiO_x/PMMA/CsMAFA/PCBM/BCP/Ag	1.14	23.44	0.83	22.13	F2HCNQ:NiO_x spin-coating	[17]
ITO/F6TCNNQ:NiO_x/CsFAMA/ PCBM/ZrAcac/Ag	1.12	23.18	0.80	20.86	F6TCNNQ/Spin coating	[41]
ITO/Cu:NiO_x/CH₃NH₃PbI₃/C₆₀/BCP/Ag	1.12	22.28	0.81	20.26	Cu:NiO_x NPs/Spin coating	[42]
ITO/Li:Co NiO_x/MA_1yFA_yPbI_3xCl_x/ PCBM/BCP/Ag	1.09	23.80	0.78	20.10	Li:Co/Spin-coating	[40]
ITO/Sr:NiO_x/CH₃NH₃PbI₃/C₆₀/BCP/Ag	1.14	22.66	0.76	19.49	Sr:NiO/Spin-coating	[38]
ITO/NiO_x:AGQDs/CsFAMA/PCBM/BCP/Ag	1.05	22.30	0.83	19.40	NiO_x:AGQDs/Spin-coating	[43]
FTO/Cs:NiO_x/MAPbI₃/PCBM/ZrAcac/Ag	1.12	21.77	0.79	19.35	Cs/Spin coating sol	[37]
ITO/NiMgO/CH₃NH₃PbI₃/PCBM/ZnMgO/Al	1.08	21.30	0.80	18.50	Mg/Sputtering	[44]
FTO/NIR-Co:NiO_x/MAPbI₃/PC₆₁BM/PEI/Ag	1.09	20.46	0.80	17.77	Co/Spin-coating	[35]
FTO/NiMgLiO/MAPbI₃/PCBM/Ti(Nb)O_x/Ag	1.07	20.21	0.75	16.20	Li-Mg/Spray pyrolysis	[45]

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表 2 基于改性NiO_x薄膜的PSCs的性能

Table 2. Performances of the PSCs based on modified NiO_x films

器件结构	电压 V_oc/V	电流 J_sc/(mA·cm^–2)	填充因子FF	光电转换效率PCE/%	改性/方法	文献
ITO/NiO_x/KCl/CsFAMA/PCBM/ZrAcac/Ag	1.15	22.89	0.80	20.96	KCl or NaCl/ Spin-coating	[51]
ITO/NiO_x/PFN-P2/CsFAMA/C₆₀/BCP/Ag	1.13	23.33	0.78	20.50	PFN-P2	[53]
FTO/NiO_x/SDBS/CH₃NH₃PbI₃/ PCBM/BCP/Ag	1.12	22.94	0.78	20.15	SDBS/Spin-coating	[54]
ITO/NiO_x/NH₄F/CH₃NH₃PbI₃/C₆₀/BCP/Ag	1.09	22.45	0.77	18.94	NH₄F/Spin-coating	[50]
ITO/NiO_x/TPI-6MEO/MAPbI₃/ PCBM/BCP/Ag	0.98	23.31	0.81	18.42	TPI-6MEO/ Spin-coating	[49]
ITO/NiO_x/SAM/Perovskite/ PCBM/Bis-C₆₀/Ag	1.11	21.70	0.76	18.40	Benzoic acid modification	[55]
ITO/NiO_x/FDA/CH₃NH₃PbI₃/PCBM/AgAl	1.04	22.55	0.76	17.87	FDA modification	[48]
FTO/NiO_x/PTAA/FA_1–xMA_xPb (I_3–yBr_y)/PCBM/Au	1.06	21.54	0.75	17.10	PTAA/Sol–gel	[56]

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Vol. 70, Issue 11 - 2021-06-05

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